XL2803A SOP18
1 Features
3 Description
•
The XL2803A device is a 50 V, 500 mA Darlington
transistor array. The device consists of eight NPN
Darlington pairs that feature high-voltage outputs with
common-cathode clamp diodes for switching
inductive loads. The collector-current rating of each
Darlington pair is 500 mA. The Darlington pairs may
be connected in parallel for higher current capability.
1
•
•
•
500-mA-Rated Collector Current
(Single Output)
High-Voltage Outputs: 50 V
Output Clamp Diodes
Inputs Compatible With Various Types of Logic
2 Applications
•
•
•
•
•
•
•
•
•
Applications include relay drivers, hammer drivers,
lamp drivers, display drivers (LED and gas
discharge), line drivers, and logic buffers. The
XL2803A device has a 2.7-kΩ series base resistor
for each Darlington pair for operation directly with
TTL or 5-V CMOS devices.
Relay Drivers
Hammer Drivers
Lamp Drivers
Display Drivers (LED and Gas Discharge)
Line Drivers
Logic Buffers
Stepper Motors
IP Camera
HVAC Valve and LED Dot Matrix
4
PART NUMBER
XL2803A
1
18
1C
2
17
2B
2C
3
16
3B
3C
4
15
4B
4C
5
14
5B
5C
6
13
6B
6C
7
12
7B
7C
8
11
8B
8C
10
COM
1
1
PACKAGE
SOIC (18)
Logic Diagram
1B
Device Information(1)
BODY SIZE (NOM)
11.55 mm × 7.50 mm
XL2803A SOP18
5 Pin Configuration and Functions
DW Package
18-Pin SOIC
Top View
1B
1
18
1C
2B
2
17
2C
3B
3
16
3C
4B
4
15
4C
5B
5
14
5C
6B
6
13
6C
7B
7
12
7C
8B
8
11
8C
GND
9
10
COM
Not to scale
Pin Functions
PIN
NAME
NO.
1B
1
2B
2
3B
3
4B
4
5B
5
6B
6
7B
7
8B
8
1C
18
2C
17
3C
16
4C
15
5C
14
6C
13
7C
12
8C
11
TYPE
DESCRIPTION
I
Channel 1 through 8 Darlington base input
O
Channel 1 through 8 Darlington collector output
GND
9
—
Common emitter shared by all channels (typically tied to ground)
COM
10
I/O
Common cathode node for flyback diodes (required for inductive loads)
2
XL2803A SOP18
6 Specifications
6.1 Absolute Maximum Ratings
at 25°C free-air temperature (unless otherwise noted) (1)
MIN
VCE
MAX
UNIT
50
V
Collector-emitter voltage
VI
Input voltage
I(clamp)
(2)
30
V
Peak collector current
500
mA
Output clamp current
500
mA
–2.5
A
TJ
Total substrate-terminal current
Junction temperature
–65
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, unless otherwise noted, are with respect to the emitter/substrate terminal GND.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VCE
Collector-emitter voltage
TA
Ambient temperature
MIN
MAX
0
50
UNIT
V
–40
85
°C
6.4 Thermal Information
XL2803A
THERMAL METRIC
(1)
DW (SOIC)
UNIT
18 PINS
RθJA
Junction-to-ambient thermal resistance
66.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
29.5
°C/W
RθJB
Junction-to-board thermal resistance
33.0
°C/W
ψJT
Junction-to-top characterization parameter
6.0
°C/W
ψJB
Junction-to-board characterization parameter
32.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
3
XL2803A SOP18
6.5 Electrical Characteristics
at TA = 25°C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ICEX
Collector cutoff current
VCE = 50 V,
see Figure 3
II = 0
II(off)
Off-state input current
VCE = 50 V,
TA = 70°C
IC = 500 μA,
see Figure 4
II(on)
Input current
VI = 3.85 V,
See Figure 5
VI(on)
VCE = 2 V,
see Figure 6
On-state input voltage
VCE(sat)
Collector-emitter saturation voltage
XL2803A
MIN
TYP
MAX
50
50
65
UNIT
μA
μA
0.93
1.35
IC = 200 mA
2.4
IC = 250 mA
2.7
IC = 300 mA
3
II = 250 μA,
see Figure 7
IC = 100 mA
0.9
1.1
II = 350 μA,
see Figure 7
IC = 200 mA
1
1.3
II = 500 μA,
see Figure 7
IC = 350 mA
1.3
1.6
50
mA
V
V
IR
Clamp diode reverse current
VR = 50 V,
see Figure 8
VF
Clamp diode forward voltage
IF = 350 mA
see Figure 9
1.7
2
V
Ci
Input capacitance
VI = 0,
f = 1 MHz
15
25
pF
TYP
MAX
μA
6.6 Switching Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
tPLH
Propagation delay time, low- to high-level output
tPHL
Propagation delay time, high- to low-level output
VS = 50 V, CL = 15 pF, RL = 163 Ω,
See Figure 10
VOH
High-level output voltage after switching
VS = 50 V, IO = 300 mA, see Figure 11
MIN
130
UNIT
ns
20
VS – 20
mV
6.7 Typical Characteristics
μ
μ
μ
μ
μ
μ
Figure 1. Collector-Emitter Saturation Voltage vs Collector
Current (One Darlington)
Figure 2. Collector-Emitter Saturation Voltage vs Total
Collector Current (Two Darlingtons in Parallel)
4
XL2803A SOP18
7 Parameter Measurement Information
Open VCE
Open VCE
IC
II(off)
ICEX
Open
Figure 3. ICEX Test Circuit
Figure 4. II(off) Test Circuit
Open
Open
II
IC
VI
VI
Open
VCE
Figure 5. II(on) Test Circuit
Figure 6. VI(on) Test Circuit
Open
VR
IC
hFE =
II
II
IR
IC
Open
VCE
Figure 7. hFE, VCE(sat) Test Circuit
Figure 8. IR Test Circuit
IF
VF
Open
Figure 9. VF Test Circuit
5
XL2803A SOP18
Parameter Measurement Information (continued)
Input
Open
VS = 50 V
RL = 163 Ω
Pulse
Generator
(see Note A)
Output
CL = 15 pF
(see Note B)
Test Circuit
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