XD54562

XD54562 DIP-18 DESCRIPTION XD54562 are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Io(max) = –500mA) Á With output clamping diodes Á Driving available with PMOS IC output of 6 ~ 16V or with TTL output Á Wide operating temperature range (Ta = –20 to +75°C) Á Output current-sourcing type PIN CONFIGURATION         INPUT          IN1→ 1 18 →O1  IN2→ 2 17 →O2   IN3→ 3 16 →O3  IN4→ 4 15 →O4  IN5→ 5 14 →O5  IN6→ 6 13 →O6  IN7→ 7 12 →O7  IN8→ 8 11 →O8  VS 9     OUTPUT     10 GND CIRCUIT DIAGRAM VS 20K APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors 8.5K INPUT 7.2K 1.5K 3K OUTPUT GND The eight circuits share the VS and GND. FUNCTION The XD54562 each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A spike-killer clamping diode is provided between each output and GND. V S and GND are used commonly among the eight circuits. The inputs have resistance of 8.5kΩ, and voltage of up to 30V is applicable. Output current is 500mA maximum. Supply voltage V S is 50V maximum. The XD54562 is enclosed in a molded small flat package, enabling space-saving design. 1 The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO # VS VI Parameter Conditions Collector-emitter voltage Supply voltage Ratings Unit –0.5 ~ +50 V 50 –0.5 ~ +30 V V –500 –500 mA mA 50 1.79(P)/1.10(FP) V W –20 ~ +75 °C –55 ~ +125 °C Output, L Input voltage IO IF VR Pd (Unless otherwise noted, Ta = –20 ~ +75 °C) Current per circuit output, H Output current Clamping diode forward current # Clamping diode reverse voltage Power dissipation Topr Ta = 25°C, when mounted on board Operating temperature Storage temperature Tstg # : Unused I/O pins must be connected to GND. RECOMMENDED OPERATING CONDITIONS Symbol VS Parameter Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) IO VIH VIL (Unless otherwise noted, Ta = –20 ~ +75°C) min Duty Cycle P : no more than 8% FP : no more than 5% Duty Cycle P : no more than 55% FP : no more than 30% “H” input voltage “L” input voltage ELECTRICAL CHARACTERISTICS Symbol Limits typ Unit 0 — 50 0 — –350 0 — –100 V 2.4 0 5 — 30 V 0.2 V mA (Unless otherwise noted, Ta = –20 ~ +75°C) Limits typ+ max — — 100 µA — — 1.75 1.50 2.4 2.0 V VI = 5V VI = 25V — — 0.48 2.8 0.75 4.7 mA VS = 50V, VI = 5V (all input) IF = –350mA — — 5.6 –1.2 15.0 –2.4 mA V VR = 50V — — 100 µA Parameter Test conditions IS (leak) # Supply leak current VCE (sat) VS = 10V, VI = 2.4V, IO = –350mA Collector-emitter saturation voltage VS = 10V, VI = 2.4V, IO = –100mA II Input current IS Supply current VF IR Clamping diode forward voltage Clamping diode reverse current # max VS = 50V, VI = 0.2V min Unit + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. # : Unused I/O pins must be connected to GND. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time Test conditions CL = 15pF (note 1) 2 Limits typ max — 110 — — 5200 — min Unit ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM INPUT VS 50% Measured device 50% INPUT OUTPUT PG 50Ω RL CL 50% 50% OUTPUT ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics Thermal Derating Factor Characteristics 2.0 –500 Output current IO (mA) Power dissipation Pd (W) XD54562 1.5 xxxx | 1.0 0.5 0 0 25 50 75 –300 –200 –100 0 100 VS = 10V VI = 2.4V Ta = 75°C Ta = 25°C Ta = –20°C –400 0 0.5 1.0 1.5 2.0 2.5 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (°C) Duty-Cycle-Output Current Characteristics (XD54562) –500 ➀ Duty-Cycle-Output Current Characteristics (XD54562) –500 –400 –400 Output current IO (mA) Output current IO (mA) ➀ ➁ –300 ➂ –200 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C –100 0 0 20 40 60 80 ➃ ➄ ➅ ➆ ➇ –300 ➁ –200 ➂ –100 0 100 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 0 20 40 60 Duty cycle (%) Duty cycle (%) 3 ➃ ➄ ➅ ➆ ➇ •Ta = 75°C 80 100 4