MBT3946

MBT3946 Dual General Purpose Transistor NPN+PNP Silicon 2 3 1 6 5 1 4 5 6 2 4 3 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Symbol VCEO Value Unit Vdc 40 -40 VCBO VEBO Vdc 60 -40 Vdc 6.0 -5.0 mAdc IC 200 -200 Thermal Characteristics Characteristics Symbol Max Unit PD 150 mW R q JA 833 C/W TJ,Tstg -55 to +150 C Total Package Dissipation (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature www.slkormicro.com 1 MBT3946 Off C har acter istics Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) (NPN) (IC=-1.0mAdc.IB=0) (PNP) V(BR)CEO Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) (NPN) 60 -40 - 6.0 -5.0 - - 50 V(BR)CBO (IC=-10 µAdc, IE=0) (PNP) Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) (NPN) (IE=-10 µAdc, IC=0) (PNP) V(BR)EBO Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) (NPN) (VCE=-30 Vdc, VEB =-3.0 Vdc) (PNP) Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) (VCE=-30Vdc, VEB=-3.0Vdc) -40 - 40 IBL ICEX (NPN) (PNP) Vdc Vdc Vdc nAdc -50 nAdc - 50 - -50 1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint. 2. Pulse Test:Pulse Width < =300 µS, Duty Cycle < =2.0%. Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Symbol Characteristics Min Max Unit On Characteristics (2) DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (NPN) 40 - 70 - (IC= 10 mAdc, VCE= 1.0Vdc) 100 300 (IC= 50 mAdc, VCE= 1.0Vdc) 60 - 30 - 60 - 80 - 100 300 (IC= 100 mAdc, VCE= 1.0Vdc) HFE (IC= -0.1 mAdc, VCE=-1.0Vdc) (PNP) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0mAdc) (NPN) (IC= 50 mAdc, IB= 5.0mAdc) (IC= -10 mAdc, IB= -1.0mAdc) (PNP) (IC=-50 mAdc, IB= -5.0mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (NPN) (IC= 50 mAdc, IB= 5.0 mAdc) (IC= -10 mAdc, IB= -1.0 mAdc) (PNP) (IC= -50 mAdc, IB= -5.0 mAdc) www.slkormicro.com VBE(sat) 2 60 - 30 - - 0.20 0.30 - -0.25 -0.40 0.65 - 0.85 0.95 -0.65 - -0.85 -0.95 - - Vdc Vdc MBT3946 Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) (NPN) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) (PNP) Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz) (VCB= -5.0 Vdc, IE=0, f=1.0MHz) (NPN) (PNP) Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz) (VEB= -0.5 Vdc, IC=0, f=1.0MHz) (NPN) (PNP) fT - - 4.0 4.5 - 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - 5.0 4.0 td - 35 35 ns tr - 35 35 ns ts - 200 225 ns tf - 50 75 Cobo Cibo Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) (NPN) (VCE= -10 Vdc, IC=-1.0 mAdc, f=1.0 kHz) (PNP) hie Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz) (NPN) (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0 kHz) (PNP) hre Small-Signal Current Gain (NPN) (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) (VCE= -10Vdc, IC=-1.0 mAdc, , f=1.0 kHz) (PNP) hfe Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=1.0kHz) (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0kHz) hoe (NPN) (PNP) Noise Figure (VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz) (NPN) (VCE= -5.0Vdc, IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz) (PNP) MHz 300 250 NF pF pF k ohms x 10-4 - µmhos dB Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= 3.0 Vdc, VBE= -0.5 Vdc) (NPN) (Ic= 10 mAdc, IB1= 1.0 mAdc) (Vcc= -3.0 Vdc, VBE= 0.5 Vdc) (PNP) (Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= 3.0 Vdc,Ic= 10 mAdc) (NPN) (Ic= 10 mAdc, IB1=IB2= 1.0 mAdc) (Vcc= -3.0 Vdc,Ic= -10 mAdc) (PNP) (Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) www.slkormicro.com 3 ns MBT3946 (NPN) DUTY CYCLE=2% 300 ns +3V +10.9V 10