S9014

S9014 NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W) APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ www.slkormicro.com 1 S9014 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Collector cut-off current ICEO VCE=35V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz CLASSIFICATION Rank Range www.slkormicro.com OF B TYP B 200 UNIT 1000 B B 150 hFE(1) L H 200-450 450-1000 2 MAX MHz S9014 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com 3 S9014 SOT-23 Package Information SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm www.slkormicro.com 4