BTA12-600B

BTA12-600B Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ ○ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) 3.Gate ◆ 1.T1 ○ TO-220F 1 Absolute Maximum Ratings Symbol 2 3 ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 12 A 119/130 A I2 t 71 A2 s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C 2.0 g VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 79 °C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG A.C. 1 minute Mass www.slkormicro.com 1 BTA12-600B Electrical Characteristics Symbol Items Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ─ ─ 2.0 mA VTM Peak On-State Voltage IT = 20 A, Inst. Measurement ─ ─ 1.4 V ─ ─ 30 ─ ─ 30 I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 VGD (dv/dt)c IH Rth(j-c) Gate Trigger Current Gate Trigger Voltage VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω mA V Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ─ ─ V Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 10 ─ ─ V/㎲ ─ 20 ─ mA ─ ─ 3.3 °C/W Holding Current Thermal Impedance www.slkormicro.com Junction to case 2 BTA12-600B Fig 1. Gate Characteristics Fig 2. On-State Voltage 2 10 VGM (10V) 1 On-State Current [A] PGM (5W) PG(AV) (0.5W) 25 ℃ IGM (2A) Gate Voltage [V] 10 0 10 o TJ = 125 C 1 10 o TJ = 25 C 0 10 VGD (0.2V) -1 10 1 2 10 0.5 3 10 10 1.0 1.5 16 3.0 3.5 π θ o θ = 180 o θ = 150 o θ = 120 2π θ 12 360° 10 Allowable Case Temperature [ oC] 130 14 Power Dissipation [W] 2.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation θ : Conduction Angle 8 6 θ = 90 o θ = 60 o θ = 30 o 4 2 0 0 2 4 6 8 10 12 120 110 100 θ π 2π θ 90 80 θ = 30 o θ = 60 o θ θ θ θ 360° θ : Conduction Angle o = 90 o = 120o = 150o = 180 70 14 0 2 4 RMS On-State Current [A] 6 8 10 12 14 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 200 150 o 100 50 V 1 0.1 -50 2 10 + GT1 _ GT1 0 50 100 o Time (cycles) www.slkormicro.com V V 10 GT3 1 50Hz 0 0 10 _ o VGT (t C) 60Hz VGT (25 C) Surge On-State Current [A] 2.0 On-State Voltage [V] Gate Current [mA] Junction Temperature [ C] 3 150 BTA12-600B Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o IGT (t C) IGT (25 C) o Transient Thermal Impedance [ C/W] 10 I 1 I I 0.1 -50 0 50 + GT1 _ GT1 _ GT3 100 1 0.1 -2 10 150 -1 0 10 o 1 10 10 Time (sec) Junction Temperature [ C] Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω ▼▲ 6V 10Ω ▼▲ ● A V ▼▲ ● 6V RG A V ● 6V RG A V ● ● ● Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ www.slkormicro.com 4 RG 2 10 BTA12-600B TO-220F Package Dimension Dim. mm Typ. Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.25 0.45 0.6 2.62 1.55 0.63 1.0 φ φ 1 φ 2 0.099 0.049 0.018 0.024 0.103 0.061 0.025 0.039 3.7 3.2 1.5 0.146 0.126 0.059 A E F I H B φ φ1 C φ2 L G M 1 2 D 1. T1 2. T2 3. Gate 3 J O N K www.slkormicro.com Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 5 BTA12-600B TO-220F Package Dimension, Forming Dim. mm Typ. Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 A B C D E F G H I J K L M N O P Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Inch Typ. Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 2.54 5.08 0.100 0.200 2.51 1.25 0.45 0.6 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.103 0.061 0.025 0.039 5.0 3.7 3.2 1.5 φ φ 1 φ 2 0.197 0.146 0.126 0.059 A E F I H B φ φ1 C φ2 L G M 1 D 2 3 N O J P K www.slkormicro.com Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 6 1. T1 2. T2 3. Gate