WST6066

WST6066 N-Ch MOSFET Product Summery General Description The WST6066 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON 60V 40mΩ ID 5.2A Applications The WST6066 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23-3L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 5.2 A 1 4.5 A 18 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 30 mJ IAS Avalanche Current 21 A Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 85 ℃/W --- 25 ℃/W Rev:1.0 May.2019 WST6066 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=4A --- 33 40 VGS=4.5V , ID=3A --- 40 50 1.0 1.5 2.5 V --- -4.8 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 28.3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (10V) --- 19 26.6 Qgs Gate-Source Charge --- 2.6 3.6 Qgd Gate-Drain Charge --- 4.1 5.7 Td(on) VDS=48V , VGS=10V , ID=4A nC --- 3 6 Rise Time VDD=30V , VGS=10V , RG=3.3Ω --- 34 61 Turn-Off Delay Time ID=4A --- 23 46 Fall Time --- 6 12 Ciss Input Capacitance --- 1027 1438 Coss Output Capacitance --- 65 91 Crss Reverse Transfer Capacitance --- 46 64 Min. Typ. Max. Unit 15.4 --- --- mJ Min. Typ. Max. Unit --- --- 4.5 A --- --- 18 A --- --- 1.2 V --- 12.1 --- nS --- 6.7 --- nC Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Parameter Symbol Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=4A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t