WSD14N10DN

WSD14N10DNG N-Ch MOSFET General Description Product Summery The WSD14N10DNG is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 100V RDSON ID 140mΩ 14A Applications The WSD14N10DNG meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z Battery protection Features zUninterruptible power supply z Advanced high cell density Trench technology DFN3X3_8L Pin Configuration z Load switch z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 14 A IDP Pulsed Drain Current 15 A EAS Avalanche Energy, Single pulse 1.2 mJ PD@TC=25℃ Total Power Dissipation 17 W -55 to 150 ℃ TJ /TSTG Operating/Storage Temperature Range Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 62 ℃/W --- 7.4 ℃/W Rev 1: May.2019 WSD14N10DNG N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit 100 --- --- V VGS=10V,ID=5A. --- 110 140 mΩ VGS=4.5V,ID=3A. --- 160 180 mΩ VGS=VDS , ID =250uA 1.2 2.0 2.5 V --- 1 uA nA = VGS=0V , ID 250uA Static Drain-Source On-Resistance Gate Threshold Voltage IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- IGSS Gate-Source Leakage Current --- --- ±100 Qg Total Gate Charge VGS=±20V , VDS=0V ID=5 A, --- 4.3 --- Qgs Gate-Source Charge --- 1.5 ----- Qgd Td(on) Tr Td(off) VDS=50 V, Gate-Drain Charge VGS=10 V --- 1.1 Turn-On Delay Time VGS=10 V, --- 14.7 --- Rise Time VDS=50 V, --- 3.5 --- Turn-Off Delay Time RG=2 Ω, --- 20.9 --- Fall Time --- 2.7 --- --- 350 --- nC ns Ciss Input Capacitance ID=5 A VGS=0 V, Coss Output Capacitance VDS=50 V, --- 28.9 --- Crss Reverse Transfer Capacitance ƒ=100 kHz --- 1.4 --- --- --- 7.0 A A Tf IS Continuous Source Current ISP Pulsed Source Current VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=7A , TJ=25℃ IF=5A,dI/dt=100A/µs,TJ=25℃ pF --- --- 21 --- --- 1.2 V --- 32.1 --- nS --- 39.4 --- nC Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C. www.winsok.tw Page 2 Rev 1: May.2019 WSD14N10DNG N-Ch MOSFET Typical Operating Characteristics VDS, Drain-source voltage (V) Figure 4, Typ. gate charge R DS(ON) , On-resistance( mΩ ) Figure 3, Typ. capacitances Figure 5, Drain-source breakdown voltage www.winsok.tw Figure 6, Drain-source on-state resistance Page 3 Rev 1: May.2019 WSD14N10DNG N-Ch MOSFET Typical Operating Characteristics (Cont.) Figure 9, Drain current www.winsok.tw Figure 10, Safe operation area TC=25 ℃ Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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