2N7002E

2N7002E N-Channel Power MOSFET General Features ● VDS = 60V,ID = 300mA RDS(ON) < 3Ω@ VGS=10V Schematic diagram RDS(ON) < 3.5 Ω@ VGS=5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and Pin Assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 60 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 300 mA Drain Current (pulsed) IDRM 500 mA THERMAL CHARACTERISTICS Symbol Characteristic Total Device Dissipation TA=25℃ Derate above25℃ PD RΘJA Thermal Resistance Junction to Ambient Junction and Storage Temperature www.slkormicro.com TJ,Tstg 1 Max Unit 225 mW 1.8 mW/℃ 417 ℃/W 150℃,-55to+150℃ 2N7002E ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID =250uA,VGS=0V) BVDSS 60 — — V Gate Threshold Voltage (ID =250uA,VGS= VDS) VGS(th) 1.0 — 2.5 V Drain-Source On Voltage (ID=50mA,VGS=5V) (ID =500mA,VGS=10V) VDS(ON) — — 0.375 3.75 V Diode Forward Voltage Drop (ISD=200mA,VGS=0V) VSD — — 1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) IDSS — — 1 uA Gate Body Leakage (VGS=+10V, VDS=0V) (VGS=+20V, VDS=0V) IGSS — — +1 +10 uA RDS(ON) — — 3 3.5 Ω Static Drain-Source On-State Resistance (ID=500mA,VGS=10V) (ID=50mA,VGS=5V) ESD Rating ESD 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width