CZT5551

CZT5551 NPN Transistor Epitaxial Planar Transistor SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H Min. 6.70 2.90 0.02 0 0.60 0.25 Max. 7.30 3.10 0.10 10 0.80 0.35 o MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified) Symbol Parameter 6 600 V V V mA 1.5 W 180 160 IC PD TJ,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Parameter o Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance specified Test conditions TYP MAX UNIT V(BR)CBO 180 _ _ V Ic= 100u A,IE=0 V(BR)CEO 160 _ _ V IC= 1mA,IB=0 _ V IE= 10u A,IC=0 6 _ ICBO _ _ 50 nA VCB= 120V,IE=0 IEBO _ _ 50 nA VEB= 4V,IC=0 _ _ _ 400 _ V(BR)EBO 80 1 hFE 2 80 hFE 3 50 _ VCE(sat) 1 _ _ VCE(sat) 2 _ _ _ _ VBE(sat) 2 _ _ fT 100 _ 300 MHz Cob _ _ 6 pF VBE(sat) 1 CLASSIFICATION OF hFE Rank A N C Range 80-200 100-240 160-400 www.slkormicro.com C O MIN hFE DC current gain -55~-150 Tamb=25 C unlessotherwise Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Units Collector-Base Voltage ELECTRICAL CHARACTERISTICS B J 1 2 3 4 5 Value VCBO VCEO VEBO Total Power Dissipation Junction and Storage Temperature REF. 1 160 _ 0.15 0.2 1 1 _ V V VCE= 5V, IC= 1mA VCE= 5V, IC= 10mA VCE= 5V, IC= 50mA I C= 10mA,IB= 1mA I C= 50mA,IB= 5mA IC= 10mA,IB= 1mA IC= 50mA,IB= 5mA VCE= 10V,IC= 10mA , f = 100MHz VCB= 10V, f=1MHz,IE=0 CZT5551 Characteristics Curve www.slkormicro.com 2