BTA26-800B

BTA26 3 Quadrants / 4 Quadrants TRIAC Features TO-3P ■IT(RMS): 25A ■VGT: 1.5V ■VDRM VRRM:800Vand1000V Applications Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. BTA26 Insulated: T2 and Tab nonconducting. Absolute Maximum Ratings(Tc=25°C unless otherwise specifed) Symbol VDRM VRRM parameter Repetitive Peak OffState Voltage Conditions Ratings Unit BTA26-800 800 V BTA26-1000 1000 V 25 A 250/260 A IT(RMS) R.M.S On-State Current Tc=110°C ITSM Surge On-State Current f=50/60Hz I²t I²t for fusing Tp=10ms 340 A²s PG(AV) Average Gate Power Dissipation Tj=125°C 1 W IGM Peak Gate Current Tj=125°C 6 A Tj Operating Junction Temperature 一40~125 °C TSTG Storage Temperature 一40~150 °C www.slkormicro.com 1 tp=16.7ms/20ms BTA26 Electrical Characteristics(Tc=25°C unless otherwise specifed) Value symbol parameter Test Conditions Unit CW IDRM Repetitive Peak Off-State Current Tc=25°C Tc=125°C IRRM Repetitive Peak Reverse Current Tc=25°C Tc=125°C BW B 5 uA 3 mA 5 uA 3 mA VTM Forward "on" voltage IT=35A, tp=380us 1.55 V VGT Gate trigger voltage VD=12V ,RL=30Ω ≤1.5 V ≥50 A/us di/dt Critical rate of rise of on-state current ≥10 A/us I,II,III IV F=120Hz,Tj=125°C, IG=2xIGT,tr≤100ns I,II,III IGT Gate trigger current Holding current VDG Gate non-trigger voltage dv/dt Critical-rate of rise of commutation voltage ≤50 ≤50 mA / / ≤100 mA ≤60 ≤80 ≤80 mA VD=12V, RL=30Ω IV IH ≤35 IT=0.2A ALL VD=VDRM, TJ=125°C TJ=125°C , VD=2/3VDRM , Gate open circuit ≥0.2 V ≥400 ≥1000 ≥500 V/us Rth(j-c) Thermal resistance Junction to case 1.1 °C/W Rth(j-a) Thermal resistance Junction to ambient 50 °C/W www.slkormicro.com 2 BTA26 characteristic curve FIG.1:Gate characteristics FIG.2: On-state characteristics(max) FIG.3:Gate trigger voltage vs junction temperature FIG.4:on-state current vs max power Dissipation FIG.5:RMS On-state vs Allowable Case Temperature FIG.6:Gate trigger current vs junction temperature www.slkormicro.com 3 BTA26 PACKAGE MECHANICAL DATA TO-3P Package Dimension www.slkormicro.com 4