S8550 TO-92

S8550 PNP General Purpose Transistors TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol V CE O V CB O VE B O IC Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation TA=2 5 C PD J unction Tem perature Tj S torage, Tem perature Ts tg Unit Vdc Vdc Vdc m Adc Value -2 5 -4 0 -5 . 0 -5 0 0 0.625 W 150 C C -5 5 to +1 5 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-E m itter B reakdown Voltage (I C = -0 . 1 mAdc, I B =0 ) V (B R )CE O -2 5 - Vdc Collector-B as e B reakdown Voltage (I C = -1 0 0 µAdc, I E =0 ) V (B R )CB O -4 0 - Vdc E m itter-B as e B reakdown Voltage (I E = -1 0 0 µAdc, I C =0 ) V (B R )E B O -5 . 0 - Vdc Collector Cutoff Current (V CE = -2 0 Vdc, I B =0 ) I CE 0 - -0 . 2 uAdc Collector Cutoff Current (V CB = -4 0 Vdc, I E =0 ) I CB O - -0 . 1 uAdc E m itter Cutoff Current (V E B = -3 . 0 V d c, I C =0 ) IE B O - -0 . 1 uAdc www.slkormicro.com 1 S8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min TYP Max Unit DC Current Gain (IC=- 50 mAdc, VCE=-1.0 Vdc) hFE (1) 85 - 300 - DC Current Gain (IC= -500 mAdc, VCE= 1.0 Vdc) hFE (2) 50 - - - Collector-Emitter Saturation Voltage (IC= -500 mAdc, IB= -50 mAdc) VCE(sat) - - -0.6 Vdc Base-Emitter Saturation Voltage (IC= -500 mAdc, IB= -50 mAdc) VBE(sat) - - -1.2 Vdc fT 150 - - MHz Characteristics ON CHARACTERISTICS Current-Gain-Bandwidth Product (IC= -20 mAdc, VCE=-6.0 Vdc, f=30MHz) Classification of hFE(1) Rank B C Range 85-160 120-200 www.slkormicro.com 2 D 160-300 S8550 www.slkormicro.com 3 S8550 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A B G www.slkormicro.com 4 TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50