ULN2803AS

ULN2803 Octal High Voltage,High Current Darlington Transistor Arrays DESCRIPTIONS： The eight NPN Da rlington connected transistors in th is fa mily of a rrays are ideally suited for interfacing between ULN2803AD DIP- 18 low logic level digital circuitry (such as TTL, CMOS or PMOS/NM OS) and the higher current/voltage requiremen ts of lamps, relays, printer hamme rs or other si milar loads for a broad range of computer, industrial, and consu mer applications. All devices feature open–co llector ou tputs and free wheeling clamp diodes ULN2803AS SOP- 18 for transient suppression The ULN2803 is designed to be co mp atible with standard TTL fa milies while the ULN2804 is optimized for 6 to 15 volt high level CMOS or PMOS. PIN CONNECTION www.slkormicro.com 1 ULN2803 ABSOLUTE MAXIMUM RATINGS ( T A = 25°C and rating apply to any one device in th e package, unless otherwise noted.) Characteristic Symbol Valu e Unit Output voltage VO 50 V Input voltage VI 30 V Collector current- continuous IC 500 mA Base current- continuous IB 25 mA Operating te mperature Topr 0～ 7 0 °C Storage temperature Tstg -55 ～ +1 50 °C Junction temperature TJ 125 °C * R θ J A =55°C/W Do not exceed maxi mu m current li mit per driver. ELECTRICAL CHARACTERISTICS (unless otherwise specified: T A =2 5°C) Characteristics Output leakage current (Fig.1) Collector-Emitter saturation voltage (Fig.2) Input current - on condition (Fig.4) Input voltage - on condition (Fig.5) Input current - off condition (Fig.3 ) Input capacitance Turn-on delay time (50% E I to 50% E O ) Turn-off delay ti me (50% E I to 50% E O ) Symbol I CEX V CE(sat) I I(on) V I(on) I I(off) Min Typ Max Vo =50V, T A =70°C 100 Vo =50V, T A =25°C 50 Ic=350mA,I B =500µA 1.1 1.6 Ic=200mA,I B =350µA 0.95 1.3 Ic=100mA,I B =250µA 0.85 1.1 V I =3.85V 1.1 1.35 V C E =2.0V, I C =200mA 1.70 2.4 V C E =2.0V, I C =250mA 1.75 2.7 V C E =2.0V, I C =300mA 1.80 3.0 I C =500µA, T A =70°C 50 100 Unit µA V mA V µA CI 15 25 pF ton 0.25 1.0 µs t o ff 0.25 1.0 µs Clamp diode leak ag e current (V R =50V) (Fig.6) IR Clamp diode forward Vo ltage (Fig.7) VF www.slkormicro.com Test conditions T A =25°C 50 T A =70°C 100 I F =3 5 0 mA 2 1.5 2.0 µA V ULN2803 TEST CIRCUIT www.slkormicro.com 3 ULN2803 TYPICAL CURVE www.slkormicro.com 4 ULN2803 OUTLINE DRAWING Un it: mm DIP- 18 www.slkormicro.com 5 ULN2803 Unit:mm SOP- 18 www.slkormicro.com 6