2SC2078

2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION –T– Designed primarily for SSB linear power amplifier applications T C S H L R STYLE 1: PIN 1. 2. 3. 4. DIMENSIONS inches B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.095 H 3.93 2.8 0.155 0.110 K Z J mm A Q U • Specified 12.5V, 27MHz Characteristics • PO = 4W PEP • ft = 200 MHz A 15.75 14.48 0.620 0.570 4 1 2 3 FEATURES UNIT F B SEATING PLANE J 0.64 0.46 0.025 0.018 K 14.27 12.70 0.562 0.500 L 1.52 1.15 0.060 0.045 N 5.33 4.83 0.210 0.190 Q 3.04 2.54 0.12 0.10 R 2.79 2.04 0.11 0.08 S 1.39 1.15 0.055 0.045 V BASE COLLECTOR EMITTER COLLECTOR T 6.47 5.97 0.255 0.235 G U 1.27 0.00 0.05 0.00 N V -1.15 -0.045 D Z 2.04 -0.08 -- MAXIMUM RATINGS CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Emitter-Base Voltage Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO IC VEBO PDISS TJ T STG RATINGS 80 75 35 5 5 12 -65 to 175 -65 to 175 UNITS V V V A V W °C °C ELECTRICAL CHARACTERISTICS CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain SYMBOL V(BR)CEO V(BR)CES V(BR)EBO ICBO hFE Collector Output Capacitance COb Output Power Collector Efficiency Po ηC TEST CONDITIONS IC =1mA,IB=0 IC =1mA,VEB=0 IE=0.1mA,IC =0 VCB = 40V, IE = 0 VCE=5V,IC =0.5A VCB=10V,IE=0 f=1MHZ VCC =12V,Pi=0.2W, f=27MHZ MIN. 35 35 5 TYP. - MAX. 10 200 UNITS V V V uA 25 - 45 60 pF 4.0 60 - - W % The 2SC2078 are classified by 0.5A hFE as follows Rank hFE B 25 to 50 C 40 to 80 D 60 to 120 E 100 to 200 . Note : Above parameters , ratings , limits and conditions are subject to change www.slkormicro.com 1