BSS123

BSS123 N-Channel Power MOSFET ■MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 100 V Gate- Source Voltage VGS +20 V Drain Current-continuous IDR 150 mA Drain Current-pulsed IDRM 600 mA ■THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA=25℃ Derate above25℃ Symbol Max Unit PD 250 mW 1.8 mW/℃ 500 ℃/W Thermal Resistance Junction to Ambient RΘJA Junction and Storage Temperature TJ,Tstg www.slkormicro.com 1 150℃,-55to+150℃ BSS123 ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID =10uA,VGS=0V) BVDSS 100 — — V Gate Threshold Voltage (ID =1mA,VGS= VDS) VGS(th) 1.0 — 2.8 V Diode Forward Voltage Drop (ISD=200mA,VGS=0V) VSD — — 1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 80V) IDSS — — 1 uA Gate Body Leakage (VGS=+20V, VDS=0V) IGSS — — +10 uA RDS(ON) — 3.5 6 Ω CISS — — 40 pF COSS — — 25 pF Turn-ON Time (VDS=50V, ID=200mA, RGEN=25Ω) t(on) — — 10 ns Turn-OFF Time (VDS=50V, ID=200mA, RGEN=25Ω) t(off) — — 20 ns Static Drain-Source On-State Resistance (ID=120mA,VGS=10V) Input Capacitance (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS=25V,f=1MHz) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width