BSS84

BSS84 P-Channel Enhancement-Mode MOS FETs MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -50 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR -130 mA Drain Current (pulsed) IDRM -520 mA THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA=25℃ Derate above25℃ Symbol Max Unit PD 200 mW 1.8 mW/℃ 350 ℃/W Thermal Resistance Junction to Ambient RΘJA Junction and Storage Temperature TJ,Tstg www.slkormicro.com 1 150℃,-55to+150℃ BSS84 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID =-250uA,VGS=0V) BVDSS -50 — — V Gate Threshold Voltage (ID =-250uA,VGS= VDS) VGS(th) -1.0 — -2.5 V Diode Forward Voltage Drop (ISD=-200mA,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= -50V) (VGS=0V, VDS=-50V, TA=125℃) IDSS — — -15 -60 uA Gate Body Leakage (VGS=+20V, VDS=0V) IGSS — — +10 nA RDS(ON) — — 10 Ω CISS — 73 — pF COSS — 10 — pF Turn-ON Time (VDS=-30V, ID=-270mA, RGEN=6Ω) t(on) — — 5 ns Turn-OFF Time (VDS=-30V, ID=-270mA, RGEN=6Ω) t(off) — — 20 ns trr — 10 — ns Static Drain-Source On-State Resistance (ID=-100mA,VGS=-5V) Input Capacitance (VGS=0V, VDS=-25V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS=-25V,f=1MHz) Reverse Recovery Time (ISD=-100mA, VGS=0V) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width