SL16N65F

SL16N65F N-Channel Power MOSFET ●Features： ■ 16A, 650V, RDS(on)(Typ) =0.5Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction Schematic diagram TO-220F Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS ID IDM Value Unit Drain-Source Voltage 650 V Drain Current Drain Current - Continuous(Tc=25C) - Continuous(Tc=100C) 16* A 10* A -Pulsed 64* A ±30 V (Note1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 980 mJ IAR Avalanche Current (Note1) 16.0 A EAR Repetitive Avalanche Energy (Note1) 32 mJ dv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns PD Power Dissipation(TC =25C) -Derate above 25°C 64 W 0.51 W/C Tj Operating Junction Temperature 150 C -55 to+150 C Max Unit Tstg Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 1.95 C /W RθJA Thermal Resistance,Junction to Ambient 62.5 C /W www.slkormicro.com 1 SL16N65F Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA △BVDSS /△TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance ID=250μA (Referenced to 25C) VDS=650V,VGS=0V VDS=520V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS= VGS, ID=250μA VGS=10 V, ID=8.0A VDS=20 V, ID=8.0A (Note4) Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 325 V, ID = 16 A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 520 V, ID =16.0 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=16.0A VSD Reverse Recovery Time trr VGS =0V, IS=16.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 7mH, IAS =16.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤16.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. www.slkormicro.com 2 Min Typ Max Unit 650 -- -- V -- 0.65 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA 2.0 -- -0.5 4.0 0.6 V Ω -- 15 -- S ---- 2250 205 23.2 ---- pF pF pF -------- 38 99 149 98 52 10 23 -------- ns ns ns ns nC nC nC ------ ---455 4.95 16 64 1.3 --- A A V ns μC SL16N65F On-Regin Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics www.slkormicro.com Gate Charge Characteristics 3 SL16N65F Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current Vs. Case Temperature Maximum Safe Operating Area www.slkormicro.com 4 SL16N65F TO-220F Package Dimensions SYMBOL A A1 A2 A3 B1 B2 B3 C C1 C2 www.slkormicro.com min 9.80 2.90 9.10 15.40 4.35 6.00 3.00 15.00 8.80 nom 7.00 max 10.60 SYMBOL D D1 D2 D3 E E1 E2 E3 E4 α 3.40 9.90 16.40 4.95 7.40 3.70 17.00 10.80 5 min 1.15 0.60 0.20 2.24 nom 2.54 0.70 UNIT：mm max 1.55 1.00 0.50 2.84 1.0×45° 0.35 2.30 30° 0.65 3.30