SL11N65CF

SL11N65C N-Channel Super Junction Power MOSFET Features VDS 650 V ● New technology for high voltage device RDS(ON)TYP 300 mΩ ● Low on-resistance and low conduction losses ID 11.5 A ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking SL11N65CK TO-263 SL11N65CK SL11N65C TO-220 SL11N65C SL11N65CF TO-220F SL11N65CF TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol SL11N65CK SL11N65C SL11N65CF Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V), AC(f>1HZ) VGS ±30 V Continuous Drain Current at TC =25°C ID (DC) 11.5 11.5* A Continuous Drain Current at TC =100°C ID (DC) 7 7* A IDM (pluse) 46 46* A PD 101 32.6 W 0.81 0.26 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(TC=25℃) Derate above 25°C Single pulse avalanche energy (Note2) (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) www.slkormicro.com 1 EAS 144 mJ IAR 6 A EAR 0.5 mJ SL11N65C Parameter Symbol SL11N65CK SL11N65C SL11N65CF Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD