SL2305

SL2305 P-Channel Power MOSFET D General Features G ● VDS = -20V,ID = -4.1A RDS(ON) < 70mΩ@ VGS=-2.5V RDS(ON) < 55m Ω@ VGS=-4.5V S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications Marking and Pin Assignment ● Load switch ● Power management SOT-23 top view MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -20 V Gate- Source Voltage VGS +10 V Drain Current (continuous) ID -4.1 A Drain Current (pulsed) IDM -15 A Total Device Dissipation TA=25℃ PD 1200 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ www.slkormicro.com 1 SL2305 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) BVDSS -20 — — V Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) -0.5 — -1.5 V Diode Forward Voltage Drop (IS= -0.75A,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= -16V) (VGS=0V, VDS= -16V, TA=55℃) IDSS — — -1 -10 uA Gate Body Leakage (VGS=+8V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance (ID= -4.1A,VGS= -4.5V) RDS(ON) — 40 55 mΩ Static Drain-Source On-State Resistance (ID= -3A,VGS= -2.5V) RDS(ON) — 57 70 mΩ Input Capacitance (VGS=0V, VDS= -10V,f=1MHz) CISS — 600 — pF Output Capacitance (VGS=0V, VDS= -10V,f=1MHz) COSS — 120 — pF Turn-ON Time (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(on) — 8 — ns Turn-OFF Time (VDS= -10V, ID= -2.8A, RGEN=6Ω) t(off) — 60 — ns Pulse Width