SL2300

SL2300 N-Channel Power MOSFET D General Features ● VDS = 20V,ID = 4.2A G RDS(ON) < 40mΩ@ VGS=2.5V RDS(ON) < 30m Ω@ VGS=4.5V S ● High power and current handing capability Schematic diagram ● Lead free product is acquired 3 ● Surface mount package D Application G 1 ● PWM applications ● Load switch 2 S Marking and pin assignment ● Power management SOT-23 top view ■MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 20 V Gate- Source Voltage VGS +8 V Drain Current (continuous) ID 4.2 A Drain Current (pulsed) IDM 16 A Total Device Dissipation TA=25℃ PD 1200 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ www.slkormicro.com 1 SL2300 ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) BVDSS 20 — — V Gate Threshold Voltage (ID = 250uA,VGS= VDS) VGS(th) 0.45 — 1.2 V Diode Forward Voltage Drop (IS= 0.75A,VGS=0V) VSD — — 1.3 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) IDSS — — 1 10 uA Gate Body Leakage (VGS=+8V, VDS=0V) IGSS — — +100 nA RDS(ON) — 25 30 50 30 40 60 CISS — — 650 pF COSS — — 150 pF Turn-ON Time (VDS= 10V, ID= 3.5A, RGEN=10Ω) t(on) — — 20 ns Turn-OFF Time (VDS= 10V, ID= 3.5A, RGEN=10Ω) t(off) — — 60 ns Static Drain-Source On-State Resistance (ID=4.2A,VGS=4.5V) (ID=2A,VGS=2.5V) (ID=1A,VGS=1.8V) Input Capacitance (VGS=0V, VDS= 10V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS= 10V,f=1MHz) Pulse Width