SL18N50F

SL18N50F N-Channel Power MOSFET ●Features： ■ 18.0A, 500V, RDS(on)(Typ) =0.25Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction Schematic diagram TO-220F Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous(Tc=25C) - Continuous(Tc=100C) -Pulsed (Note1) Value Unit 500 V 18.0* A 11.0* A 72* A ±30 V VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 945 mJ IAR Avalanche Current (Note1) 18.0 A EAR Repetitive Avalanche Energy (Note1) 23.5 mJ Peak Diode Recovery dv/dt (Note3) 4.5 V/ns dv/dt PD Power Dissipation(TC =25C) -Derate above 25°C 60 W 0.48 W/C Tj Operating Junction Temperature 150 C -55 to+150 C Max Unit Tstg Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 2.08 C /W RθJA Thermal Resistance,Junction to Ambient 62.5 C /W www.slkormicro.com 1 SL18N50F Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA △BVDSS /△TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance ID=250μA (Referenced to 25C) VDS=500V,VGS=0V VDS=400V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS= VGS, ID=250μA VGS=10 V, ID=9.0A VDS=40 V, ID=9.0A (Note4) Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 250 V, ID = 18.0A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 400 V, ID =18.0 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=18.0A VSD Reverse Recovery Time trr VGS =0V, IS=18.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 5.8mH, IAS =18.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤18.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. www.slkormicro.com 2 Min Typ Max Unit 500 -- -- V -- 0.63 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA -4.0 0.25 0.32 V Ω 2.0 --- 11 -- S ---- 2200 330 25 ---- pF pF pF -------- 65 165 95 90 45 12.5 19 -------- ns ns ns ns nC nC nC ------ ---500 5.4 18.0 72 1.4 --- A A V ns μC SL18N50F On-Regin Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics www.slkormicro.com Gate Charge Characteristics 3 SL18N50F Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current Vs. Case Temperature Maximum Safe Operating Area www.slkormicro.com 4 SL18N50F TO-220F Package Dimensions SYMBOL A A1 A2 A3 B1 B2 B3 C C1 C2 www.slkormicro.com min 9.80 2.90 9.10 15.40 4.35 6.00 3.00 15.00 8.80 nom 7.00 max 10.60 SYMBOL D D1 D2 D3 E E1 E2 E3 E4 α 3.40 9.90 16.40 4.95 7.40 3.70 17.00 10.80 5 min 1.15 0.60 0.20 2.24 nom 2.54 0.70 UNIT：mm max 1.55 1.00 0.50 2.84 1.0×45° 0.35 2.30 30° 0.65 3.30