SL30S60

SL30S60 FAST RECOVER DIODE Features  600V,30A  Guarding for over voltage protection  Metal of silicon rectifier,majority carrier conduction  Low forward voltage,high efficiency Applications  Switching power supply  Rectifier in switch mode supplies Absolute Maximum Ratings Symbol Value Units Maximum D.C. Reverse Voltage 600 V VRRM Maximum Repetitive Reverse Voltage 600 V IF(AV) Diode Continuous Forward Current ( TC=100 ℃) 30 A IFRMS RMS Forward Current (TC=100℃) 42 A IFSM Non-Repetitive Surge Forward Current 150 A PD Power Dissipation 100 W TJ Operating Junction Temperature Range -40 to +175 ℃ TSTG Storage Temperature Range -40 to +175 ℃ RthJC Thermal Resistance 1.5 ℃/W VR Parameter www.slkormicro.com -1- SL30S60 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units Diode Forward Voltage IF=15A TC=25℃ 1.2 1.5 V Diode Forward Voltage IF=15A TC=125℃ 1.1 1.5 V IR Instantaneous reverse current VR=600V 10 uA IRRM Diode peak Reverse Recovery Current IF= 1A 1.6 A trr Diode Reverse Recovery Time dif/dt=200A/us 60 ns QRR Diode Reverse Recovery Charge VR=30V 40 nC IRRM Diode peak Reverse Recovery Current A trr IF= 15A， dif/dt=200A/us 8.8 Diode Reverse Recovery Time 120 ns QRR Diode Reverse Recovery Charge VR=300V 570 nC VF Fig.1 Forward Current vs Forward Voltage Fig.2 Reverse Current vs Reverse Voltage Fig.3 trr Test Circuit www.slkormicro.com Fig.4 trr Waveforms and Definitions - 2-