SL2312

SL2312 N-Channel Power MOSFET General Features D ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V G RDS(ON) < 25mΩ @ VGS=4.5V ● High power and current handing capability S ● Lead free product is acquired Schematic diagram ● Surface mount package Application ●Battery protection ●Load switch ●Power management SOT-23 top view MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 20 V Gate- Source Voltage VGS +8 V Drain Current (continuous) ID 5 A Drain Current (pulsed) IDM 18 A PD 1250 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Total Device Dissipation TA=25℃ www.slkormicro.com 1 SL2312 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) BVDSS 20 — — V Gate Threshold Voltage (ID =250uA,VGS= VDS) VGS(th) 0.45 — 1.2 V Diode Forward Voltage Drop (IS=0.75A,VGS=0V) VSD — — 1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) IDSS — — 1 10 uA Gate Body Leakage (VGS=+8V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance (ID= 5A,VGS= 4.5V) RDS(ON) — 23 25 mΩ Static Drain-Source On-State Resistance (ID= 2A,VGS= 2.5V) RDS(ON) — 32 35 mΩ Static Drain-Source On-State Resistance (ID= 1A,VGS= 1.8V) RDS(ON) — 45 50 mΩ Input Capacitance (VGS=0V, VDS= 10V,f=1MHz) CISS — 650 — pF Output Capacitance (VGS=0V, VDS= 10V,f=1MHz) COSS — 120 — pF Turn-ON Time (VDS= 10V, ID= 3A, RGEN=6Ω) t(on) — 20 — ns Turn-OFF Time (VDS= 10V, ID= 3A, RGEN=6Ω) t(off) — 60 — ns Pulse Width