SL3404

SL3404 N-Channel Power MOSFET MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 30 V Gate- Source Voltage VGS +20 V Drain Current (continuous) ID 5 A Drain Current (pulsed) IDM 18 A TA=25℃ PD 1400 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Total Device Dissipation www.slkormicro.com 1 SL3404 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID =250uA,VGS=0V) BVDSS 30 — — V Gate Threshold Voltage (ID = 250uA,VGS= VDS) VGS(th) 1 — 3 V Diode Forward Voltage Drop (IS= 1A,VGS=0V) VSD — 0.7 1 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 30V) IDSS — — 1 uA Gate Body Leakage (VGS=+20V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance (ID= 5A,VGS=10V) RDS(ON) — 25 28 mΩ Static Drain-Source On-State Resistance (ID= 3A,VGS=4.5V) RDS(ON) — 40 45 mΩ Input Capacitance (VGS=0V, VDS= 15V,f=1MHz) CISS — 545 — pF Output Capacitance (VGS=0V, VDS= 15V,f=1MHz) COSS — 66 — pF Turn-ON Time (VDS= 15V, VGS= 10V, RGEN=6Ω) t(on) — 9.6 — ns Turn-OFF Time (VDS= 15V, VGS= 10V, RGEN=6Ω) t(off) — 39 — ns Pulse Width