SL3906

SL3906 PNP Switching Transistor ■MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Ic -200 mAdc Collector Current-Continuous ■THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA=25℃ Derate above25℃ Total Device Dissipation Alumina Substrate, TA=25℃ Derate above25℃ Symbol Max PD 225 mW 1.8 mW/℃ 300 mW 2.4 mW/℃ 417 ℃/W PD Thermal Resistance Junction to Ambient RΘJA Junction and Storage Temperature TJ,Tstg www.slkormicro.com 1 Unit 150℃, -55to+150℃ SL3906 ■ELECTRICAL CHARACTERISTICS (TA=25 25℃ unless otherwise noted ) ■OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (Ic=-1.0mAdc,IB=0) V(BR)CEO -40 — Vdc Collector-Base Breakdown Voltage (Ic=-10μAdc,IE=0) V(BR)CBO -40 — Vdc Emitter-Base Breakdown Voltage (IE=-10μAdc,Ic=0) Base Cutoff Current (VCE=-30Vdc, VEB =-3.0 Vdc) V(BR)EBO -6.0 — Vdc IBEX — -50 nAdc ICEX — -50 nAdc Symbol Min Max Unit Collector Cutoff Current (VCE=-30Vdc, VEB =-3.0Vdc) ■ON CHARCTERISTICS(2) Characteristic hPE DC Current Gain (Ic=-0.1mAdc,VCE=-1.0Vdc) (Ic=-1.0mAdc,VCE=-1.0Vdc) (Ic=-10mAdc,VCE=-1.0Vdc) (Ic=-50mAdc,VCE=-1.0Vdc) (Ic=-100mAdc,VCE=-1.0Vdc) Collector-Emitter Saturation Voltage (Ic=-10mAdc, IB=-1.0mAdc) (Ic=-50mAdc, IB=-5.0mAdc) VCE(sat) Base-Emitter Saturation Voltage (Ic=-10mAdc, IB=-1.0mAdc) (Ic=-50mAdc, IB=-5.0mAdc) VBE(sat) www.slkormicro.com 2 — 40 70 100 60 30 — — 300 — — — — -0.25 -0.4 -0.65 — -0.85 -0.95 Vdc Vdc SL3906 ■SMALL-SIGNAL CHARACTERISTICS Symbol Min Max Unit fT 300 — MHz Output Capacitance (VCB=-5.0Vdc, IE=0, f=1.0MHz) Cobo — 4.0 pF Input Capacitance (VEB=-0.5Vdc, IC=0, f=1.0MHz) Input Impedance (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) Cibo — 8.0 pF hie 1.0 10 kΩ Voltage Feedback Ratio (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) Small-Signal Current Gain (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) Output Admittance (VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz) hre 0.5 8.0 ×10-4 hfe 100 400 — hoe 1.0 40 μmhos NF — 5.0 dB Symbol Min Max Unit td — 35 Characteristic Current-Gain-Bandwidth Product (Ic=-10mAdc,VCE=-20Vdc,f=100MHz) Noise Figure (VCE=-5.0Vdc, IC=-100μAdc,Rs=1.0 kΩf=1.0KHz) ■SWITCHING CHARACTERISTICS Characteristic Delay Time Rise Time (VCC=-3.0Vdc,VBE=-0.5Vdc, IC=-10mAdc, IB1=-1.0mAdc) ns Storage Time Fall Time (VCC=-3.0Vdc,IC=-10mAdc, IB1=IB2=-1.0mAdc) tr — 35 ts — 225 ns tf 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width