SL3904

SL3904 NPN Switching Transistor ■MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Ic 200 mAdc Collector Current-Continuous ■THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation FR-5 Board(1) Derate above25℃ PD 225 mW 1.8 mW/℃ Total Device Dissipation Alumina Substrate, Derate above25℃ PD 300 mW 2.4 mW/℃ RΘJA 417 ℃/W Solder Temperature/Solder Time T/t 260/10 ℃/S Junction and Storage Temperature TJ,Tstg Thermal Resistance Junction to Ambient www.slkormicro.com 1 Unit 150℃, -55to+150℃ SL3904 ■ELECTRICAL CHARACTERISTICS (TA=25 25℃ unless otherwise noted ) ■OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (Ic=1.0mAdc,IB=0) V(BR)CEO 40 — Vdc Collector-Base Breakdown Voltage (Ic=10μAdc,IE=0) V(BR)CBO 60 — Vdc Emitter-Base Breakdown Voltage (IE=10μAdc,Ic=0) Base Cutoff Current (VCE=30Vdc, VEB =3.0 Vdc) V(BR)EBO 6.0 — Vdc IBEX — 50 nAdc ICEX — 50 nAdc Symbol Min Max Unit Characteristic Collector Cutoff Current (VCE=30Vdc, VEB =3.0Vdc) ■ON CHARCTERISTICS(2) Characteristic hPE DC Current Gain (Ic=0.1mAdc,VCE=1.0Vdc) (Ic=1.0mAdc,VCE=1.0Vdc) (Ic=10mAdc,VCE=1.0Vdc) (Ic=50mAdc,VCE=1.0Vdc) (Ic=100mAdc,VCE=1.0Vdc) Collector-Emitter Saturation Voltage (Ic=10mAdc, IB=1.0mAdc) (Ic=50mAdc, IB=5.0mAdc) VCE(sat) Base-Emitter Saturation Voltage (Ic=10mAdc, IB=1.0mAdc) (Ic=50mAdc, IB=5.0mAdc) VBE(sat) www.slkormicro.com 2 — 40 70 100 60 30 — — 300 — — — — 0.25 0.4 0.65 — 0.85 0.95 Vdc Vdc SL3904 ■SMALL-SIGNAL CHARACTERISTICS Characteristic Symbol Min Max Unit Current-Gain-Bandwidth Product (Ic=10mAdc,VCE=-20Vdc,f=100MHz) fT 300 — MHz Output Capacitance (VCB=5.0Vdc, IE=0, f=1.0MHz) Cobo — 4.0 pF Input Capacitance (VEB=0.5Vdc, IC=0, f=1.0MHz) Input Impedance (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz) Cibo — 8.0 pF hie 1.0 10 kΩ Voltage Feedback Ratio (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz) Small-Signal Current Gain (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz) Output Admittance (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz) hre 0.5 8.0 ×10-4 hfe 100 400 — hoe 1.0 40 μmhos NF — 5.0 dB Symbol Min Max Unit td — 35 Noise Figure (VCE=5.0Vdc, IC=100μAdc,Rs=1.0 kΩf=1.0KHz) ■SWITCHING CHARACTERISTICS Characteristic Delay Time Rise Time (VCC=3.0Vdc,VBE=0.5Vdc, IC=10mAdc, IB1=1.0mAdc) ns Storage Time Fall Time (VCC=3.0Vdc,IC=10mAdc, IB1=IB2=1.0mAdc) tr — 35 ts — 225 ns tf 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width