SL3407

SL3407 P-Channel Power MOSFET D General Features ● VDS = -30V,ID = -4.1A G RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications Marking and pin assignment ● Load switch ● Power management SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -4.1 A IDM -20 A PD 1.4 W TJ,TSTG -55 To 150 ℃ RθJA 90 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Off Characteristics www.slkormicro.com 1 SL3407 Parameter Symbol Condition Min Typ Max Unit IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4.1A - 48 65 mΩ VGS=-4.5V, ID=-4A - 60 95 mΩ VDS=-5V,ID=-4.1A 5.5 - - S - 650 - PF - 105 - PF - 65 - PF - 8.5 - nS Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-15V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 4.5 - nS td(off) VGS=-10V,RGEN=3Ω - 26 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 12.5 - nS Total Gate Charge Qg - 12.5 - nC Gate-Source Charge Qgs - 2.8 - nC Gate-Drain Charge Qgd - 2.7 - nC - - -1.2 V VDS=-15V,ID=-4A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-4.1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.slkormicro.com 2 SL3407 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.slkormicro.com Figure 6 Drain-Source On-Resistance 3 ID- Drain Current (A) Normalized On-Resistance SL3407 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge www.slkormicro.com Figure 12 Source- Drain Diode Forward 4 ID- Drain Current (A) SL3407 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.slkormicro.com 5 SL3407 SOT-23 Package Information Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° www.slkormicro.com 6