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S-93C56BR0I-J8T1G

S-93C56BR0I-J8T1G

  • 厂商:

    ABLIC(艾普凌科)

  • 封装:

    SOP-8J_5.02X3.9MM

  • 描述:

    IC EEPROM 2KBIT SPI 2MHZ 8SOP

  • 数据手册
  • 价格&库存
S-93C56BR0I-J8T1G 数据手册
S-93C46B/56B/66B 3-WIRE SERIAL E2PROM www.ablicinc.com Rev.8.1_02 © ABLIC Inc., 2002-2015 The S-93C46B/56B/66B is a high speed, low current consumption, 3-wire serial E2PROM with a wide operating voltage range. The S-93C46B/56B/66B has the capacity of 1 K-bit, 2 K-bit and 4 K-bit, and the organization is 64-word 16-bit, 128-word 16-bit and 256-word 16-bit. It is capable of sequential read, at which time addresses are automatically incremented in 16-bit blocks. The communication method is by the Microwire bus. Features Operating voltage range: Read 1.8 V to 5.5 V Write 2.7 V to 5.5 V 2.0 MHz (VCC = 4.5 V to 5.5 V) 8.0 ms max. Operation frequency: Write time: Sequential read capable Write protect function during the low power supply voltage Function to protect against write due to erroneous instruction recognition 6 *1 Endurance: 10 cycles / word (Ta = 85 C) Data retention: 100 years (Ta = 25 C) 20 years (Ta = 85 C) Memory capacity: S-93C46B 1 K-bit S-93C56B 2 K-bit S-93C66B 4 K-bit Initial delivery state: FFFFh Operation temperature range: Ta = 40°C to 85 C Lead-free, Sn 100%, halogen-free*2 *1. For each address (Word: 16-bit) *2. Refer to “ Product Name Structure” for details. Packages 8-Pin SOP (JEDEC) 8-Pin TSSOP TMSOP-8 SNT-8A Caution This product is intended to use in general electronic devices such as consumer electronics, office equipment, and communications devices. Before using the product in medical equipment or automobile equipment including car audio, keyless entry and engine control unit, contact to ABLIC Inc. is indispensable. 1 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Pin Configurations 1. 8-Pin SOP (JEDEC) Table 1 8-Pin SOP (JEDEC) Top view 1 8 2 7 3 6 4 5 Figure 1 Pin No. Symbol Description 1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground *1 6 TEST Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. S-93C46BD0I-J8T1x S-93C56BD0I-J8T1x S-93C66BD0I-J8T1x 8-Pin SOP (JEDEC) (Rotated) Top view 1 8 2 7 3 6 4 5 Figure 2 S-93C46BR0I-J8T1x S-93C56BR0I-J8T1x S-93C66BR0I-J8T1x Table 2 Pin No. Symbol Description 1 NC No connection 2 VCC Power supply 3 CS Chip select input 4 SK Serial clock input 5 DI Serial data input 6 DO Serial data output 7 GND Ground 8 TEST*1 Test *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. Remark 1. Refer to the “package drawings” for the details. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products. 2 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2. 8-Pin TSSOP Table 3 8-Pin TSSOP Top view 8 7 6 5 1 2 3 4 Figure 3 S-93C46BD0I-T8T1x S-93C56BD0I-T8T1x S-93C66BD0I-T8T1x 3. Pin No. 1 2 3 4 5 6 7 8 Symbol CS SK DI DO GND *1 TEST NC VCC Description Chip select input Serial clock input Serial data input Serial data output Ground Test No connection Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. TMSOP-8 Table 4 TMSOP-8 Top view 8 7 6 5 1 2 3 4 Figure 4 S-93C46BD0I-K8T3U S-93C56BD0I-K8T3U S-93C66BD0I-K8T3U Pin No. Symbol Description 1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground 6 TEST*1 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. Remark 1. Refer to the “package drawings” for the details. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products. 3 3-WIRE SERIAL E2PROM S-93C46B/56B/66B 4. Rev.8.1_02 SNT-8A Table 5 SNT-8A Top view 1 2 3 4 8 7 6 5 Figure 5 S-93C46BD0I-I8T1U S-93C56BD0I-I8T1U S-93C66BD0I-I8T1U Pin No. Symbol Description 1 CS Chip select input 2 SK Serial clock input 3 DI Serial data input 4 DO Serial data output 5 GND Ground 6 TEST*1 Test 7 NC No connection 8 VCC Power supply *1. Connect to GND or VCC. Even if this pin is not connected, performance is not affected so long as the absolute maximum rating is not exceeded. Remark Refer to the “package drawings” for the details. 4 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Block Diagram Memory array VCC Address decoder Data register GND Output buffer DO DI Mode decode logic CS 'PSGOTYPWI QSRMXSVMRKGMVGYMX SK Voltage detector Clock generator Figure 6 5 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Instruction Sets 1. S-93C46B Table 6 Instruction SK input clock Start Bit Address Data 4 5 6 7 8 9 READ (Read data) WRITE (Write data) ERASE (Erase data) 1 1 1 1 0 1 0 1 1 A5 A5 A5 A4 A4 A4 A3 A3 A3 A2 A2 A2 A1 A1 A1 A0 A0 A0 WRAL (Write all) ERAL (Erase all) 1 0 0 0 1 x x x x 1 0 0 1 0 x x x x EWEN (Write enable) 1 0 0 1 1 x x x x EWDS (Write disable) 1 0 0 0 0 x x x x *1. 1 Operation Code 2 3 10 to 25 D15 to D0 Output*1 D15 to D0 Input D15 to D0 Input When the 16-bit data in the specified address has been output, the data in the next address is output. Remark x: Don’t care 2. S-93C56B Table 7 Instruction SK input clock Start Bit Address Data READ (Read data) WRITE (Write data) ERASE (Erase data) 1 1 1 1 0 1 0 1 1 4 x x x 5 A6 A6 A6 6 A5 A5 A5 7 A4 A4 A4 8 A3 A3 A3 9 A2 A2 A2 10 A1 A1 A1 WRAL (Write all) ERAL (Erase all) 1 1 0 0 0 0 0 1 1 0 x x x x x x x x x x x x EWEN (Write enable) 1 0 0 1 1 x x x x x x 0 x x x x x x EWDS (Write disable) *1. 1 Operation Code 2 3 1 0 0 0 11 12 to 27 A0 D15 to D0 Output*1 A0 D15 to D0 Input A0 D15 to D0 Input When the 16-bit data in the specified address has been output, the data in the next address is output. Remark x: Don’t care 3. S-93C66B Table 8 Instruction SK input clock Start Bit Address Data READ (Read data) WRITE (Write data) ERASE (Erase data) 1 1 1 1 0 1 0 1 1 4 A7 A7 A7 5 A6 A6 A6 6 A5 A5 A5 7 A4 A4 A4 8 A3 A3 A3 9 A2 A2 A2 10 A1 A1 A1 11 A0 A0 A0 WRAL (Write all) ERAL (Erase all) 1 1 0 0 0 0 0 1 1 0 x x x x x x x x x x x x EWEN (Write enable) 1 0 0 1 1 x x x x x x EWDS (Write disable) 1 0 0 0 0 x x x x x x *1. 12 to 27 D15 to D0 Output D15 to D0 Input D15 to D0 Input When the 16-bit data in the specified address has been output, the data in the next address is output. Remark x: Don’t care 6 1 Operation Code 2 3 *1 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Absolute Maximum Ratings Table 9 Item Symbol Ratings Unit Power supply voltage VCC 0.3 to 7.0 V Input voltage VIN 0.3 to VCC 0.3 V Output voltage VOUT 0.3 to VCC V Operation ambient temperature Topr 40 to 105 C Storage temperature Tstg 65 to 150 C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Recommended Operating Conditions Table 10 Item Symbol Power supply voltage VCC High level input voltage VIH Low level input voltage VIL Ta = 40 C to 85 C Min. Max. 1.8 5.5 Conditions READ, EWDS WRITE, ERASE, WRAL, ERAL, EWEN VCC = 4.5 V to 5.5 V VCC = 2.7 V to 4.5 V VCC = 1.8 V to 2.7 V VCC = 4.5 V to 5.5 V VCC = 2.7 V to 4.5 V VCC = 1.8 V to 2.7 V Unit V 2.7 5.5 V 2.0 0.8 VCC 0.8 VCC 0.0 0.0 0.0 VCC VCC VCC 0.8 0.2 VCC 0.15 VCC V V V V V V Pin Capacitance Table 11 Item Input Capacitance Output Capacitance Symbol CIN COUT Conditions VIN = 0 V VOUT = 0 V (Ta = 25 C, f = 1.0 MHz, VCC = 5.0 V) Min. Max. Unit 8 pF 10 pF Endurance Table 12 Item Symbol Operation Ambient Temperature Endurance NW Ta = 40 C to 85 C *1. For each address (Word: 16-bit) Min. 106 Max. Unit cycles / word*1 Min. 100 20 Max. Unit year year Data Retention Table 13 Item Data retention Symbol Operation Ambient Temperature Ta = 25°C Ta = 40 C to 85°C 7 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 DC Electrical Characteristics Table 14 Item Current consumption (READ) Symbol ICC1 Conditions VCC = 4.5 V to 5.5 V Min. Max. DO no load Ta = 40 C to 85 C VCC = 2.5 V to 4.5 V Min. Max. 0.8 VCC = 1.8 V to 2.5 V Min. Max. 0.5 0.4 Unit mA Table 15 Item Current consumption (WRITE) Symbol ICC2 Conditions Ta = 40 C to 85 C VCC = 4.5 V to 5.5 V VCC = 2.7 V to 4.5 V Min. Max. Min. Max. DO no load 2.0 Unit 1.5 mA Table 16 Item Standby current consumption Input leakage current Output leakage current Low level output voltage 8 Symbol Conditions Ta = 40 C to 85 C VCC = VCC = VCC = 4.5 V to 5.5 V 2.5 V to 4.5 V 1.8 V to 2.5 V Min. Max. Min. Max. Min. Max. ILI CS = GND, DO = Open, Other inputs to VCC or GND VIN = GND to VCC ILO VOUT = GND to VCC 1.0 1.0 1.0 IOL = 2.1 mA IOL = 100 A IOH = 400 A IOH = 100 A IOH = 10 A 0.4 0.1 0.1 0.1 ISB VOL High level output voltage VOH Data hold voltage of write enable latch VDH Only program disable mode Unit 1.5 1.5 1.5 A 1.0 1.0 1.0 A A 2.4 VCC 0.3 VCC 0.2 VCC 0.3 VCC 0.2 VCC 0.2 V V V V V 1.5 1.5 1.5 V 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 AC Electrical Characteristics Table 17 Measurement Conditions Input pulse voltage 0.1 Output reference voltage VCC to 0.9 0.5 Output load VCC VCC 100 pF Table 18 Ta = 40 C to 85 C Item Symbol VCC = 4.5 V to 5.5 V VCC = 2.5 V to 4.5 V VCC = 1.8 V to 2.5 V Min. Max. Min. Max. Min. Unit Max. CS setup time tCSS 0.2 0.4 1.0 s CS hold time tCSH 0 0 0 s CS deselect time tCDS 0.2 0.2 0.4 s Data setup time tDS 0.1 0.2 0.4 s Data hold time tDH 0.1 0.2 0.4 s Output delay time tPD 0.4 0.8 2.0 s *1 Clock frequency fSK 0 2.0 0 0.5 0 0.25 MHz SK clock time “L”*1 tSKL 0.1 0.5 1.0 s SK clock time “H”*1 tSKH 0.1 0.5 1.0 s Output disable time tHZ1, tHZ2 0 0.15 0 0.5 0 1.0 s Output enable time tSV 0 0.15 0 0.5 0 1.0 s *1. The clock cycle of the SK clock (frequency: fSK) is 1 / fSK s. This clock cycle is determined by a combination of several AC characteristics, so be aware that even if the SK clock cycle time is minimized, the clock cycle (1 / fSK) cannot be made equal to tSKL (min.) tSKH (min.). Table 19 Item Symbol Min. Write time tPR Ta = 40 C to 85 C VCC = 2.7 V to 5.5 V Typ. 4.0 Unit Max. 8.0 ms 9 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 1 / fSK tCSS *2 tCDS CS tSKH tCSH tSKL SK tDS DI tDH Valid data tPD High-Z*1 (READ) DO tDH Valid data tPD DO tDS High-Z tSV tHZ2 tHZ1 High-Z High-Z (VERIFY) *1. *2. Indicates high impedance. 1 / fSK is the SK clock cycle. This clock cycle is determined by a combination of several AC characteristics, so be aware that even if the SK clock cycle time is minimized, the clock cycle (1 / fSK) cannot be made equal to tSKL (min.) tSKH (min.). Figure 7 Timing Chart 10 Rev.8.1_02 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Initial Delivery State Initial delivery state of all addresses is “FFFFh”. Operation All instructions are executed by inputting DI in synchronization with the rising edge of SK after CS goes high. An instruction set is input in the order of start bit, instruction, address, and data. Instruction input finishes when CS goes low. A low level must be input to CS between commands during tCDS. While a low level is being input to CS, the S-93C46B/56B/66B is in standby mode, so the SK and DI inputs are invalid and no instructions are allowed. Start Bit A start bit is recognized when the DI pin goes high at the rise of SK after CS goes high. After CS goes high, a start bit is not recognized even if the SK pulse is input as long as the DI pin is low. 1. Dummy clock SK clocks input while the DI pin is low before a start bit is input are called dummy clocks. Dummy clocks are effective when aligning the number of instruction sets (clocks) sent by the CPU with those required for serial memory operation. For example, when a CPU instruction set is 16 bits, the number of instruction set clocks can be adjusted by inserting a 7-bit dummy clock for the S-93C46B and a 5-bit dummy clock for the S93C56B/66B. 2. Start bit input failure When the output status of the DO pin is high during the verify period after a write operation, if a high level is input to the DI pin at the rising edge of SK, the S-93C46B/56B/66B recognizes that a start bit has been input. To prevent this failure, input a low level to the DI pin during the verify operation period (refer to “4. 1 Verify operation”). When a 3-wire interface is configured by connecting the DI input pin and DO output pin, a period in which the data output from the CPU and the serial memory collide may be generated, preventing successful input of the start bit. Take the measures described in “ 3-Wire Interface (Direct Connection between DI and DO)”. 11 3-WIRE SERIAL E2PROM S-93C46B/56B/66B 3. Rev.8.1_02 Reading (READ) The READ instruction reads data from a specified address. After CS has gone high, input an instruction in the order of the start bit, read instruction, and address. Since the last input address (A0) has been latched, the output status of the DO pin changes from high impedance (High-Z) to low, which is held until the next rise of SK. 16-bit data starts to be output in synchronization with the next rise of SK. 3. 1 Sequential read After the 16-bit data at the specified address has been output, inputting SK while CS is high automatically increments the address, and causes the 16-bit data at the next address to be output sequentially. The above method makes it possible to read the data in the whole memory space. The last address (An A1 A0 = 1 1 1) rolls over to the top address (An A1 A0 = 0 0 0). CS SK 1 DI 2 1 3 0 4 A5 5 A4 6 A3 7 A2 8 A1 9 11 12 23 24 25 26 27 39 28 40 41 42 43 44 A0 High-Z DO 10 0 D15 D14 D13 D2 D1 D0 D15 D14 D13 D2 D1 ADRINC D0 D15 D14 D13 High-Z ADRINC Figure 8 Read Timing (S-93C46B) CS SK DI DO 1 2 1 3 0 4 5 A6 High-Z 6 7 A5 A4 8 A3 9 A2 10 A1 11 12 13 14 24 25 26 27 28 29 41 42 43 44 45 A0 x : S-93C56B A7: S-93C66B 0 D15 D14 D13 D2 D1 D0 D15 D14 D13 ADRINC Figure 9 Read Timing (S-93C56B, S-93C66B) 12 40 D2 D1 D0 D15 D14 D13 ADRINC High-Z Rev.8.1_02 4. 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Writing (WRITE, ERASE, WRAL, ERAL) A write operation includes four write instructions: data write (WRITE), data erase (ERASE), chip write (WRAL), and chip erase (ERAL). A write instruction (WRITE, ERASE, WRAL, ERAL) starts a write operation to the memory cell when a low level is input to CS after a specified number of clocks have been input. The SK and DI inputs are invalid during the write period, so do not input an instruction. Input an instruction while the output status of the DO pin is high or high impedance (High-Z). A write operation is valid only in program enable mode (refer to “5. Write enable (EWEN) and write disable (EWDS)”). 4. 1 Verify operation A write operation executed by any instruction is completed within 8 ms (write time tPR: typically 4 ms), so if the completion of the write operation is recognized, the write cycle can be minimized. A sequential operation to confirm the status of a write operation is called a verify operation. 4. 1. 1 Operation After the write operation has started (CS = low), the status of the write operation can be verified by confirming the output status of the DO pin by inputting a high level to CS again. This sequence is called a verify operation, and the period that a high level is input to the CS pin after the write operation has started is called the verify operation period. The relationship between the output status of the DO pin and the write operation during the verify operation period is as follows. DO pin = low: Writing in progress (busy) DO pin = high: Writing completed (ready) 4. 1. 2 Operation example There are two methods to perform a verify operation: Waiting for a change in the output status of the DO pin while keeping CS high, or suspending the verify operation (CS = low) once and then performing it again to verify the output status of the DO pin. The latter method allows the CPU to perform other processing during the wait period, allowing an efficient system to be designed. Caution 1. Input a low level to the DI pin during a verify operation. 2. If a high level is input to the DI pin at the rise of SK when the output status of the DO pin is high, the S-93C46B/56B/66B latches the instruction assuming that a start bit has been input. In this case, note that the DO pin immediately enters a high-impedance (High-Z) state. 13 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 4. 2 Writing data (WRITE) To write 16-bit data to a specified address, change CS to high and then input the WRITE instruction, address, and 16-bit data following the start bit. The write operation starts when CS goes low. There is no need to set the data to 1 before writing. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the WRITE instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”. tCDS CS Standby Verify SK 1 2 DI 3 0 1 4 5 6 7 8 9 10 A5 A4 A3 A2 A1 A0 D15 25 D0 DO tHZ1 tSV High-Z busy ready tPR Figure 10 High-Z Data Write Timing (S-93C46B) tCDS CS SK DI 1 2 0 3 1 4 5 6 7 8 9 10 11 12 27 A6 A5 A4 A3 A2 A1 A0 D15 D0 High-Z DO tSV x : S-93C56B A7: S-93C66B Figure 11 14 Standby Verify Data Write Timing (S-93C56B, S-93C66B) tHZ1 busy tPR ready High-Z 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 4. 3 Erasing data (ERASE) To erase 16-bit data at a specified address, set all 16 bits of the data to 1, change CS to high, and then input the ERASE instruction and address following the start bit. There is no need to input data. The data erase operation starts when CS goes low. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the ERASE instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”. tCDS CS Standby Verify SK 1 2 DI 3 1 1 4 5 6 7 8 A5 A4 A3 A2 A1 9 A0 tSV High-Z DO busy tHZ1 ready High-Z tPR Figure 12 Data Erase Timing (S-93C46B) tCDS CS SK DI DO Standby Verify 1 2 1 3 1 4 5 6 7 8 9 A6 A5 A4 A3 A2 High-Z x : S-93C56B A7: S-93C66B 10 A1 11 A0 tSV busy tPR tHZ1 ready High-Z Figure 13 Data Erase Timing (S-93C56B, S-93C66B) 15 3-WIRE SERIAL E2PROM S-93C46B/56B/66B 4. 4 Rev.8.1_02 Writing to chip (WRAL) To write the same 16-bit data to the entire memory address space, change CS to high, and then input the WRAL instruction, an address, and 16-bit data following the start bit. Any address can be input. The write operation starts when CS goes low. There is no need to set the data to 1 before writing. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the WRAL instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”. tCDS CS Standby Verify SK 1 2 DI 3 0 4 0 5 0 6 7 9 1 10 25 D0 D15 4Xs High-Z DO 8 tSV busy tHZ1 ready High-Z tPR Figure 14 Chip Write Timing (S-93C46B) tCDS CS SK DI DO 1 2 0 3 0 4 0 5 6 7 8 1 High-Z 6Xs 9 10 11 12 27 D15 D0 tSV tHZ1 busy tPR Figure 15 16 Standby Verify Chip Write Timing (S-93C56B, S-93C66B) ready High-Z 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 4. 5 Erasing chip (ERAL) To erase the data of the entire memory address space, set all the data to 1, change CS to high, and then input the ERAL instruction and an address following the start bit. Any address can be input. There is no need to input data. The chips erase operation starts when CS goes low. If the clocks more than the specified number have been input, the clock pulse monitoring circuit cancels the ERAL instruction. For details of the clock pulse monitoring circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition”. CS SK 1 DI 2 3 4 0 0 1 5 6 7 8 9 0 4Xs tSV High-Z DO Standby Verify tCDS tHZ1 busy ready High-Z tPR Figure 16 Chip Erase Timing (S-93C46B) CS SK DI DO 1 2 3 4 0 0 1 5 6 7 8 9 10 Standby Verify tCDS 11 0 High-Z 6Xs tSV tHZ1 busy ready High-Z tPR Figure 17 Chip Erase Timing (S-93C56B, S-93C66B) 17 3-WIRE SERIAL E2PROM S-93C46B/56B/66B 5. Rev.8.1_02 Write enable (EWEN) and write disable (EWDS) The EWEN instruction is an instruction that enables a write operation. The status in which a write operation is enabled is called the program enable mode. The EWDS instruction is an instruction that disables a write operation. The status in which a write operation is disabled is called the program disable mode. After CS goes high, input an instruction in the order of the start bit, EWEN or EWDS instruction, and address (optional). Each mode becomes valid by inputting a low level to CS after the last address (optional) has been input. CS Standby SK 1 2 3 0 DI 4 5 6 7 8 9 0 4Xs 11 = EWEN 00 = EWDS Figure 18 Write Enable / Disable Timing (S-93C46B) CS SK DI Standby 1 2 0 3 4 5 7 8 9 10 11 0 11 = EWEN 00 = EWDS Figure 19 6 6Xs Write Enable / Disable Timing (S-93C56B, S-93C66B) 5. 1 Recommendation for write operation disable instruction It is recommended to implement a design that prevents an incorrect write operation when a write instruction is erroneously recognized by executing the write operation disable instruction when executing instructions other than write instruction, and immediately after power-on and before power off. 18 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Write Protect Function during the Low Power Supply Voltage The S-93C46B/56B/66B provides a built-in detector. When the power supply voltage is low or at power application, the write instructions (WRITE, ERASE, WRAL, ERAL) are cancelled, and the write disable state (EWDS) is automatically set. The detection voltage is 1.75 V typ., the release voltage is 2.05 V typ., and there is a hysteresis of about 0.3 V (refer to Figure 20). Therefore, when a write operation is performed after the power supply voltage has dropped and then risen again up to the level at which writing is possible, a write enable instruction (EWEN) must be sent before a write instruction (WRITE, ERASE, WRAL, ERAL) is executed. When the power supply voltage drops during a write operation, the data being written to an address at that time is not guaranteed. Power supply voltage Detection voltage ( VDET) 1.75 V typ. Hysteresis About 0.3 V Release voltage ( VDET) 2.05 V typ. Write instruction cancelled Write disable state (EWDS) automatically set Figure 20 Operation during Low Power Supply Voltage 19 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Function to Protect Against Write due to Erroneous Instruction Recognition The S-93C46B/56B/66B provides a built-in clock pulse monitoring circuit which is used to prevent an erroneous write operation by canceling write instructions (WRITE, ERASE, WRAL, ERAL) recognized erroneously due to an erroneous clock count caused by the application of noise pulses or double counting of clocks. Instructions are cancelled if a clock pulse more or less than specified number decided by each write operation (WRITE, ERASE, WRAL, ERAL) is detected. Erroneous recognition of program disable instruction (EWDS) as erase instruction (ERASE) Example of S-93C46B Noise pulse CS 1 2 3 4 5 6 7 8 9 SK DI Input EWDS instruction Erroneous recognition as ERASE instruction due to 1 0 0 0 0 0 0 0 0 1 1 10 0 0 00 0 0 0 0 noise pulse In products that do not include a clock pulse monitoring circuit, FFFF is mistakenly written on address 00h. However the S-93C46B detects the overcount and cancels the instruction without performing a write operation. Figure 21 Example of Clock Pulse Monitoring Circuit Operation 20 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 3-Wire Interface (Direct Connection between DI and DO) There are two types of serial interface configurations: a 4-wire interface configured using the CS, SK, DI, and DO pins, and a 3-wire interface that connects the DI input pin and DO output pin. When the 3-wire interface is employed, a period in which the data output from the CPU and the data output from the serial memory collide may occur, causing a malfunction. To prevent such a malfunction, connect the DI and DO pins of the S-93C46B/56B/66B via a resistor (10 k to 100 k ) so that the data output from the CPU takes precedence in being input to the DI pin (refer to “Figure 22 Connection of 3-Wire Interface”). CPU S-93C46B/56B/66B SIO DI DO R : 10 k Figure 22 to 100 k Connection of 3-Wire Interface Input Pin and Output Pin 1. Connection of input pins All the input pins of the S-93C46B/56B/66B employ a CMOS structure, so design the equipment so that high impedance will not be input while the S-93C46B/56B/66B is operating. Especially, deselect the CS input (a low level) when turning on / off power and during standby. When the CS pin is deselected (a low level), incorrect data writing will not occur. Connect the CS pin to GND via a resistor (10 k to 100 k pull-down resistor). To prevent malfunction, it is recommended to use equivalent pull-down resistors for pins other than the CS pin. 2. Equivalent circuit of input pin and output pin The following shows the equivalent circuits of input pins of the S-93C46B/56B/66B. None of the input pins incorporate pull-up and pull-down elements, so special care must be taken when designing to prevent a floating status. Output pins are high-level / low-level / high-impedance tri-state outputs. The TEST pin is disconnected from the internal circuit by a switching transistor during normal operation. As long as the absolute maximum rating is satisfied, the TEST pin and internal circuit will never be connected. 21 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2. 1 Input pin CS Figure 23 CS Pin SK, DI Figure 24 SK, DI Pin TEST Figure 25 TEST Pin 22 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2. 2 Output pin VCC DO Figure 26 DO Pin 3. Input pin noise elimination time The S-93C46B/56B/66B includes a built-in low-pass filter to eliminate noise at the SK, DI, and CS pins. This means that if the supply voltage is 5.0 V (at room temperature), noise with a pulse width of 20 ns or less can be eliminated. Note, therefore, the noise with a pulse width of more than 20 ns will be recognized as a pulse if the voltage exceeds VIH / VIL. Precaution Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 23 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Characteristics (Typical Data) 1. DC Characteristics 1. 1 Current consumption (READ) ICC1 vs. ambient temperature Ta 1. 2 Current consumption (READ) ICC1 vs. ambient temperature Ta VCC = 3.3 V fSK = 500 kHz DATA = 0101 VCC ! 5.5 V fSK ! 2 MHz DATA ! 0101 0.4 0.4 ICC1 (mA) ICC1 (mA) 0.2 0.2 0 40 0 85 0 40 Ta ( C) 1. 4 Current consumption (READ) ICC1 vs. power supply voltage VCC Ta = 25 C fSK = 1 MHz, 500 kHz DATA = 0101 VCC ! 1.8 V fSK ! 10 kHz DATA ! 0101 0.4 0.4 ICC1 (mA) ICC1 (mA) 0.2 1 MHz 0.2 500 kHz 40 0 0 85 2 Ta ( C) ICC1 (mA) 100 kHz 5 6 VCC (V) 24 0.2 0 10 kHz 4 6 0.4 0.2 3 5 VCC = 5.0 V Ta = 25 C 0.4 2 4 1. 6 Current consumption (READ) ICC1 vs. Clock frequency fSK Ta = 25 C fSK = 100 kHz, 10 kHz DATA = 0101 ICC1 (mA) 3 VCC (V) 1. 5 Current consumption (READ) ICC1 vs. power supply voltage VCC 0 85 Ta ( C) 1. 3 Current consumption (READ) ICC1 vs. ambient temperature Ta 0 0 7 10 k 100 k 1 M 2M 10M fSK (Hz) 7 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 1. 7 Current consumption (WRITE) ICC2 vs. ambient temperature Ta 1. 8 Current consumption (WRITE) ICC2 vs. ambient temperature Ta VCC = 3.3 V VCC ! 5.5 V 1.0 1.0 ICC2 (mA) ICC2 (mA) 0.5 0.5 0 0 40 0 85 40 0 Ta ( C) Ta ( C) 1. 9 Current consumption (WRITE) ICC2 vs. ambient temperature Ta 85 1. 10 Current consumption (WRITE) ICC2 vs. power supply voltage VCC VCC ! 2.7 V Ta ! 25 C 1.0 1.0 ICC2 (mA) ICC2 (mA) 0.5 0.5 0 40 0 0 85 2 3 Ta ( C) 1. 11 Current consumption in standby mode ISB vs. ambient temperature Ta 5 6 7 1. 12 Current consumption in standby mode ISB vs. power supply voltage VCC Ta = 25 C CS = GND VCC = 5.5 V CS = GND 1.0 ISB ( A) ISB ( A) 1.0 0.5 0.5 0 4 VCC (V) 40 0 Ta (°C) 85 0 2 3 4 5 6 7 VCC (V) 25 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 1. 13 Input leakage current ILI vs. ambient temperature Ta 1. 14 Input leakage current ILI vs. ambient temperature Ta VCC ! 5.5 V CS, SK, DI, TEST ! 5.5 V VCC = 5.5 V CS, SK, DI, TEST = 0 V 1.0 1.0 ILI ( A) lLI ( A) 0.5 0.5 0 0 -40 0 85 40 1. 16 Output leakage current ILO vs. ambient temperature Ta VCC = 5.5 V DO = 5.5 V VCC ! 5.5 V DO ! 0 V 1.0 1.0 ILO ( A) ILO ( A) 0.5 0 0.5 40 0 0 85 40 Ta ( C) 85 1. 18 High-level output voltage VOH vs. ambient temperature Ta VCC ! 2.7 V IOH ! 100 A 2.7 VOH (V) 4.4 2.6 2.5 4.2 40 0 Ta ( C) 26 0 Ta (°C) 1. 17 High-level output voltage VOH vs. ambient temperature Ta VCC = 4.5 V IOH = 400 A 4.6 VOH (V) 85 Ta ( C) Ta ( C) 1. 15 Output leakage current ILO vs. ambient temperature Ta 0 85 40 0 Ta ( C) 85 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 1. 19 High-level output voltage VOH vs. ambient temperature Ta 2.5 VOH (V) 1. 20 High-level output voltage VOH vs. ambient temperature Ta VCC ! 2.5 V IOH ! 100 A 1.9 VOH (V) 2.4 VCC = 1.8 V IOH = 10 A 1.8 1.7 2.3 40 0 40 85 1. 21 Low-level output voltage VOL vs. ambient temperature Ta VOL (V) 1. 22 Low-level output voltage VOL vs. ambient temperature Ta VCC ! 4.5 V IOL ! 2.1 mA 0.03 0.2 VOL 0.02 (V) 0.1 0.01 40 0 85 Ta ( C) Ta ( C) 0.3 0 85 VCC ! 1.8 V IOL ! 100 A 40 0 85 Ta ( C) Ta ( C) 1. 23 High-level output current IOH vs. ambient temperature Ta VCC ! 4.5 V VOH ! 2.4 V 1. 24 High-level output current IOH vs. ambient temperature Ta VCC = 2.7 V VOH = 2.4 V 20.0 2 IOH (mA) IOH (mA) 10.0 0 1 40 0 Ta ( C) 85 0 40 0 85 Ta ( C) 27 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 1. 25 High-level output current IOH vs. ambient temperature Ta 1. 26 High-level output current IOH vs. ambient temperature Ta VCC ! 2.5 V VOH ! 2.2 V VCC ! 1.8 V VOH ! 1.6 V 2 1.0 IOH (mA) IOH (mA) 1 0.5 0 0 40 0 85 40 Ta ( C) 85 Ta ( C) 1. 27 Low-level output current IOL vs. ambient temperature Ta 1. 28 Low-level output current IOL vs. ambient temperature Ta VCC = 1.8 V VOL = 0.1 V VCC = 4.5 V VOL = 0.4 V 1.0 20 IOL (mA) IOL (mA) 0.5 10 0 0 Ta ( C) 40 0 85 1. 29 Input inverted voltage VINV vs. power supply voltage VCC 40 0 Ta ( C) 85 1. 30 Input inverted voltage VINV vs. ambient temperature Ta VCC = 5.0 V CS, SK, DI Ta ! 25 C CS, SK, DI 3.0 3.0 VINV (V) VINV (V) 1.5 0 2.0 1 2 3 4 5 VCC (V) 28 0 6 7 0 40 0 Ta ( C) 85 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2.0 2.0 VDET (V) VDET (V) 1.0 0 1.0 40 0 Ta ( C) 85 0 40 0 85 Ta ( C) 29 3-WIRE SERIAL E2PROM S-93C46B/56B/66B 2. Rev.8.1_02 AC Characteristics 2. 1 Maximum operating frequency fMAX. vs. power supply voltage VCC 2. 2 Write time tPR vs. power supply voltage VCC Ta ! 25 C fMAX. ,^  Ta ! 25 C 2M 1M 4 tPR (ms) 100k 2 10k 1 2 3 4 5 1 2 3 VCC (V) 2. 3 Write time tPR vs. ambient temperature Ta VCC = 3.0 V 6 tPR (ms) 6 4 4 2 2 40 0 85 40 Ta ( C) 0 85 Ta ( C) 2. 5 Write time tPR vs. ambient temperature Ta 2. 6 Data output delay time tPD vs. ambient temperature Ta VCC ! 2.7 V VCC ! 4.5 V tPR (ms) 6 tPD ( s) 4 0.3 0.2 2 0.1 40 0 Ta ( C) 30 5 6 2. 4 Write time tPR vs. ambient temperature Ta VCC ! 5.0 V tPR (ms) 4 VCC (V) 85 40 0 Ta ( C) 85 7 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2. 7 Data output delay time tPD vs. ambient temperature Ta 2. 8 Data output delay time tPD vs. ambient temperature Ta VCC ! 2.7 V tPD ( s) VCC ! 1.8 V 0.6 tPD ( s) 1.5 0.4 1.0 0.2 0.5 40 0 Ta ( C) 85 40 0 85 Ta ( C) 31 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 Product Name Structure 1. Product name 1. 1 8-Pin SOP (JEDEC), 8-Pin TSSOP S-93CxxB x 0 I - xxxx x Environmental code U: Lead-free (Sn 100%), halogen-free G: Lead-free (for details, please contact our sales office) Package name (abbreviation) and IC packing specifications J8T1: 8-Pin SOP (JEDEC), Tape T8T1: 8-Pin TSSOP, Tape Operation temperature 40 C to 85 C I: Fixed Pin assignment D: 8-Pin SOP (JEDEC) 8-Pin TSSOP R: 8-Pin SOP (JEDEC) (Rotated) Product name S-93C46B : S-93C56B : S-93C66B : 1 K-bit 2 K-bit 4 K-bit 1. 2 TMSOP-8, SNT-8A S-93CxxB D0 I - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and IC packing specifications K8T3: TMSOP-8, Tape I8T1: SNT-8A, Tape Operation temperature 40 C to 85 C I: Fixed Product name S-93C46B : S-93C56B : S-93C66B : 32 1 K-bit 2 K-bit 4 K-bit 3-WIRE SERIAL E2PROM S-93C46B/56B/66B Rev.8.1_02 2. Packages Package Name 8-Pin SOP (JEDEC) 8-Pin TSSOP TMSOP-8 SNT-8A Environmental code = G Environmental code = U Environmental code = G Environmental code = U Package FJ008-A-P-SD FJ008-A-P-SD FT008-A-P-SD FT008-A-P-SD FM008-A-P-SD PH008-A-P-SD Drawing Code Tape Reel FJ008-D-C-SD FJ008-D-R-SD FJ008-D-C-SD FJ008-D-R-S1 FT008-E-C-SD FT008-E-R-SD FT008-E-C-SD FT008-E-R-S1 FM008-A-C-SD FM008-A-R-SD PH008-A-C-SD PH008-A-R-SD Land PH008-A-L-SD 33 Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein. 4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges. 5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited. 14. For more details on the information described herein, contact our sales office. 2.0-2018.01 www.ablicinc.com
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