74HCT00N,652

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74HC00; 74HCT00 Quad 2-input NAND gate Rev. 7 — 25 November 2015 Product data sheet 1. General description The 74HC00; 74HCT00 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits  Input levels:  For 74HC00: CMOS level  For 74HCT00: TTL level  Complies with JEDEC standard no. 7A  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  Multiple package options  Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74HC00D Package Temperature range Name Description Version 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very SOT762-1 thin quad flat package; no leads; 14 terminals; body 2.5  3  0.85 mm 74HCT00D 74HC00DB 74HCT00DB 74HC00PW 74HCT00PW 74HC00BQ 74HCT00BQ 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 4. Functional diagram   $  % <   $  % <   $  % <   $  % <            $ <  % PQD Fig 1. PQD Logic symbol Fig 2. PQD IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning +& +&7  $ WHUPLQDO LQGH[DUHD   %   % <   $   < <   $ $ $   < %  %   % <  <   $  % % *1'   < <  9&&   *1' $  9&& +& +&7 *1'  %  $ DDO 7UDQVSDUHQWWRSYLHZ DDO (1) This is not a supply pin. The substrate is attached to this pad using conductive die attach material. There is no electrical or mechanical requirement to solder this pad. However, if it is soldered, the solder land should remain floating or be connected to GND. Fig 4. Pin configuration SO14 and (T)SSOP14 74HC_HCT00 Product data sheet Fig 5. Pin configuration DHVQFN14 All information provided in this document is subject to legal disclaimers. Rev. 7 — 25 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10, 13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 6. Functional description Table 3. Function table[1] Input Output nA nB nY L X H X L H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC supply voltage IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V [1] IO output current 0.5 V < VO < VCC + 0.5 V ICC IGND Tstg storage temperature Max Unit 0.5 +7 V - 20 mA - 20 mA - 25 mA supply current - 50 mA ground current 50 - mA 65 +150 C - 500 mW [2] total power dissipation Ptot Min SO14, (T)SSOP14 and DHVQFN14 packages [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C. 74HC_HCT00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 25 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC00 Min Typ 74HCT00 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 +25 +125 40 +25 +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max 74HC00 VIH VIL VOH VOL HIGH-level input voltage VCC = 2.0 V - 1.2 - 1.5 - 1.5 - V VCC = 4.5 V - 2.4 - 3.15 - 3.15 - V VCC = 6.0 V - 3.2 - 4.2 - 4.2 - V LOW-level input voltage VCC = 2.0 V - 0.8 - - 0.5 - 0.5 V VCC = 4.5 V - 2.1 - - 1.35 - 1.35 V VCC = 6.0 V - 2.8 - - 1.8 - 1.8 V IO = 20 A; VCC = 2.0 V - 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V - 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V - 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V - 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V - 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 - - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 - - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 - - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 - - 0.33 - 0.4 V HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - - - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - - - 20 - 40 A 74HC_HCT00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 25 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter CI 25 C Conditions input capacitance 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max - 3.5 - - - - - pF 74HCT00 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 4.5 - 4.4 - 4.4 - V IO = 4.0 mA - 4.32 - 3.84 - 3.7 - V LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V IO = 5.2 mA; VCC = 6.0 V - 0.15 - - 0.33 - 0.4 V VOL II input leakage current VI = VCC or GND; VCC = 6.0 V - - - - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - - - 20 - 40 A ICC additional supply current per input pin; VI = VCC  2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 150 - - 675 - 735 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 25 - 115 135 74HC00 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 2.0 V VCC = 4.5 V - 9 - 23 27 ns VCC = 5.0 V; CL = 15 pF - 7 - - - ns - 7 - 20 23 ns VCC = 6.0 V tt transition time 74HC_HCT00 Product data sheet ns see Figure 6 [2] VCC = 2.0 V - 19 - 95 110 ns VCC = 4.5 V - 7 - 19 22 ns VCC = 6.0 V - 6 - 16 19 ns All information provided in this document is subject to legal disclaimers. Rev. 7 — 25 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 15 74HC00; 74HCT00 NXP Semiconductors Quad 2-input NAND gate Table 7. Dynamic characteristics …continued GND = 0 V; CL = 50 pF; for test circuit see Figure 7. Symbol Parameter CPD 25 C Conditions power dissipation capacitance [3] per package; VI = GND to VCC 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 22 - - - pF 74HCT00 [1] propagation delay nA, nB to nY; see Figure 6 tpd transition time tt power dissipation capacitance CPD VCC = 4.5 V - 12 - 24 29 ns VCC = 5.0 V; CL = 15 pF - 10 - - - ns VCC = 4.5 V; see Figure 6 [2] - - - 29 22 ns per package; VI = GND to VCC  1.5 V [3] - 22 - - - pF [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD  VCC2  fi  N +  (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching;  (CL  VCC2  fo) = sum of outputs. 11. Waveforms 9, Q$Q%LQSXW 90 *1' W3+/ 92+ 9< 90 9; Q