NV6113

NV6113 GaNFast™ Power IC 2. Description QFN 5 x 6 mm This GaNFast power IC is optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5 x 6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs. Simplified schematic 1. Features GaNFast™ Power IC • Monolithically-integrated gate drive • Wide logic input range with hysteresis • 5 V / 15 V input-compatible • Wide VCC range (10 to 30 V) • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • 800 V Transient Voltage Rating • 650 V Continuous Voltage rating • Low 300 mΩ resistance 3. Topologies / Applications • • • • • • • • • • Zero reverse recovery charge • ESD Protection – 2,000V (HBM), 1,000 V (CDM) • 2 MHz operation Small, low-profile SMT QFN • 5 x 6 mm footprint, 0.85 mm profile • Minimized package inductance AC-DC, DC-DC, DC-AC Buck, boost, half bridge, full bridge Active Clamp Flyback, LLC resonant, Class D Quasi-Resonant Flyback Mobile fast-chargers, adapters Notebook adaptors LED lighting, solar micro-inverters TV / monitor, wireless power Server, telecom & networking SMPS Environmental • RoHS, Pb-free, REACH-compliant 4. Typical Application Circuits DCIN(+) DCOUT(+) DCIN(+) D VCC PWM D 10V to 24V PWM Half Bridge Driver IC REG VDD DZ REG VDD VCC dV/dt DZ dV/dt NV6113 S D VCC PWM REG VDD NV6113 DZ S dV/dt 10V to 24V NV6113 S DCIN(-) DCIN(-) DCOUT(-) Half-bridge Boost Final Datasheet PGND 1 Rev Oct 27, 2020 NV6113 5. Table of Contents 1. Features ................................................................. 1 8.2. Normal Operating Mode .................................. 12 2. Description ............................................................ 1 8.3. Standby Mode ................................................. 12 3. Topologies / Applications ..................................... 1 8.4. Programmable Turn-on dV/dt Control .............. 12 4. Typical Application Circuits ................................. 1 8.5. Current Sensing .............................................. 13 5. Table of Contents .................................................. 2 8.6. Paralleling Devices .......................................... 13 6. Specifications ........................................................ 3 8.7. 3.3V PWM Input Circuit ................................... 14 6.1. Absolute Maximum Ratings (1) ............................ 3 8.8. PCB Layout Guidelines ................................... 14 6.2. Recommended Operating Conditions (3) ............. 3 8.9. Recommended Component Values ................. 15 6.3. ESD Ratings ...................................................... 4 8.9.1. Zener Selection ....................................... 15 6.4. Thermal Resistance ........................................... 4 8.10. Drain-to-Source Voltage Considerations........ 16 6.5. Electrical Characteristics.................................... 5 9. Recommended PCB Land Pattern ..................... 17 6.6. Switching Waveforms ........................................ 6 10. PCB Layout Guidelines .................................... 18 6.7. Characteristic Graphs ........................................ 7 11. QFN Package Outline ....................................... 20 7. Internal Schematic, Pin Configurations and Functions ................................................................. 10 12. Tape and Reel Dimensions .............................. 21 13. Ordering Information ........................................ 22 8. Functional Description ....................................... 11 14. Revision History ............................................... 22 8.1. Start Up ........................................................... 11 Final Datasheet 2 Rev Oct 27, 2020 NV6113 6. Specifications 6.1. Absolute Maximum Ratings(1) (with respect to Source (pad) unless noted) SYMBOL PARAMETER VDS (TRAN) Transient Drain-to-Source Voltage VDS (CONT) Continuous Drain-to-Source Voltage VCC (2) Supply Voltage MAX UNITS 800 V -7 to +650 V 30 V VPWM PWM Input Pin Voltage -3 to +30 V VDZ VDD Setting Pin Voltage 6.6 V VDD Drive Supply Voltage 7.2 V 5 A ID Continuous Drain Current (@ TC = 100ºC) ID PULSE Pulsed Drain Current (10 µs @ TJ = 25°C) 10 A ID PULSE Pulsed Drain Current (10 µs @ TJ = 125°C) 7.5 A Slew Rate on Drain-to-Source 200 V/ns Operating Junction Temperature -55 to 150 ºC Storage Temperature -55 to 150 ºC dV/dt TJ TSTOR (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond these ratings may cause permanent damage. (2) VDS (TRAN)allows for surge ratings during non-repetitive events that are