128Mb (x16) - SDR Synchronous DRAM
8M x 16 bit Synchronous DRAM (SDRAM)
Overview
The 128Mb SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as four
banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock
signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a Read or Write command.
The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination
option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of
the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use.
By having a programmable mode register, the system can choose the most suitable modes to maximize its performance.
These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high
performance PC applications.
Features
• JEDEC Standard Compliant
• Auto Refresh and Self Refresh
• AEC-Q100 Compliant available
• Effective refresh rate
- 64ms @ -40°C ≦ TC ≦ +85°
- 32ms @ +85°C < TC ≦ +95°C
• Operating temperature range
- Extended Test (ET): TC = 0~70°C
- Industrial (IT): TC = -40~85°C
- Automotive (AT): TC = -40~105°C
- 16ms @ +95°C < TC ≦ +105°C
• CKE power down mode
• Fast access time from clock: 4.5/5 ns
• Single +3.3V 0.3V power supply
• Fast clock rate: 200/166 MHz
• Interface: LVTTL
• Fully synchronous operation
• 54-pin 400 mil plastic TSOP II package
- Pb free and Halogen free
• Internal pipelined architecture
• 2M word x 16-bit x 4-bank
• 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package
- Pb free and Halogen free
• Programmable Mode registers
- CAS Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
DISCLAIMER: All product, product specifications, and data are subject to change without notice to improve reliability, function or design, or otherwise. The
information provided herein is correct to the best of Insignis Technology Corporation’s knowledge. No liability for any errors, facts or opinions is accepted.
Customers must satisfy themselves as to the suitability of this product for their application. No responsibility for any loss as a result of any person placing reliance
on any material contained herein will be accepted.
NDS76Pv1.6-128Mb(x16)20180927
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
How to Order
Function Density
SDR
SDR
SDR
SDR
SDR
SDR
SDR
SDR
SDR
SDR
128Mb
128Mb
128Mb
128Mb
128Mb
128Mb
128Mb
128Mb
128Mb
128Mb
IO
Width
x16
x16
x16
x16
x16
x16
x16
x16
x16
x16
Pkg
Type
BGA
BGA
BGA
BGA
BGA
TSOPII
TSOPII
TSOPII
TSOPII
TSOPII
Pkg Size
8x8 (x1.2)
8x8 (x1.2)
8x8 (x1.2)
8x8 (x1.2)
8x8 (x1.2)
54l 10x22 (x1.2)
54l 10x22 (x1.2)
54l 10x22 (x1.2)
54l 10x22 (x1.2)
54l 10x22 (x1.2)
Visit: http://insignis-tech.com/how-to-buy
NDS76Pv1.6-128Mb(x16)20180927
2
Speed &
Latency
PC166
PC166
PC166
PC200
PC200
PC166
PC166
PC166
PC200
PC200
Option
INSIGNIS PART
NUMBER:
Extended Test
NDS76PBA-16ET
Industrial Temp
NDS76PBA-16IT
Automotive Temp NDS76PBA-16AT
Extended Test
NDS76PBA-20ET
Industrial Temp
NDS76PBA-20IT
Extended Test
NDS76PT5-16ET
Industrial Temp
NDS76PT5-16IT
Automotive Temp NDS76PT5-16AT
Extended Test
NDS76PT5-20ET
Industrial Temp
NDS76PT5-20IT
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 1. Pin Assignment (Top View)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE#
CAS#
RAS#
CS#
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC/RFU
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Figure 1.1 Ball Assignment (Top View)
1
2
3
A
VSS
DQ15
B
DQ14
C
…
7
8
9
VSSQ
VDDQ
DQ0
VDD
DQ13
VDDQ
VSSQ
DQ2
DQ1
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS#
RAS#
WE#
G
NC
A11
A9
BA0
BA1
CS#
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
NDS76Pv1.6-128Mb(x16)20180927
3
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 2. Block Diagram
CLOCK
BUFFER
Row
Decoder
CLK
CKE
2M x 16
CELL ARRAY
(BANK #A)
Column Decoder
COMMAND
DECODER
DQ0
DQ Buffer
CONTROL
SIGNAL
GENERATOR
DQ15
LDQM, UDQM
COLUMN
COUNTER
Row
Decoder
A10/AP
MODE
REGISTER
2M x 16
CELL ARRAY
(BANK #B)
Column Decoder
ADDRESS
BUFFER
Row
Decoder
~
A0
A9
A11
BA0
BA1
REFRESH
COUNTER
2M x 16
CELL ARRAY
(BANK #C)
Row
Decoder
Column Decoder
2M x 16
CELL ARRAY
(BANK #D)
Column Decoder
NDS76Pv1.6-128Mb(x16)20180927
~
CS#
RAS#
CAS#
WE#
4
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Pin Descriptions
Table 3. Pin Details
Symbol
Type
Description
CLK
Input
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the
positive edge of CLK. CLK also increments the internal burst counter and controls the
output registers.
CKE
Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If CKE goes
low synchronously with clock (set-up and hold time same as other inputs), the internal clock
is suspended from the next clock cycle and the state of output and burst address is frozen
as long as the CKE remains low. When all banks are in the idle state, deactivating the clock
controls the entry to the Power Down and Self Refresh modes. CKE is synchronous except
after the device enters Power Down and Self Refresh modes, where CKE becomes
asynchronous until exiting the same mode. The input buffers, including CLK, are disabled
during Power Down and Self Refresh modes, providing low standby power.
BA0,BA1
Input
Bank Activate: BA0, BA1 input select the bank for operation.
BA1
BA0
Select Bank
0
0
BANK #A
0
1
BANK #B
1
0
BANK #C
1
1
BANK #D
A0-A11
Input
Address Inputs: A0-A11 are sampled during the BankActivate command (row address A0A11) and Read/Write command (column address A0-A8 with A10 defining Auto Precharge)
to select one location out of the 2M available in the respective bank. During a Precharge
command, A10 is sampled to determine if all banks are to be precharged (A10 = HIGH).
The address inputs also provide the op-code during a Mode Register Set command.
CS#
Input
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command
decoder. All commands are masked when CS# is sampled HIGH. CS# provides for external
bank selection on systems with multiple banks. It is considered part of the command code.
RAS#
Input
Row Address Strobe: The RAS# signal defines the operation commands in conjunction
with the CAS# and WE# signals and is latched at the positive edges of CLK. When RAS#
and CS# are asserted "LOW" and CAS# is asserted "HIGH," either the BankActivate
command or the Precharge command is selected by the WE# signal. When the WE# is
asserted "HIGH," the BankActivate command is selected and the bank designated by BA
is turned on to the active state. When the WE# is asserted "LOW," the Precharge command
is selected and the bank designated by BA is switched to the idle state after the precharge
operation.
CAS#
Input
Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges of CLK.
When RAS# is held "HIGH" and CS# is asserted "LOW," the column access is started by
asserting CAS# "LOW." Then, the Read or Write command is selected by asserting WE#
"LOW" or "HIGH."
WE#
Input
Write Enable: The WE# signal defines the operation commands in conjunction with the
RAS# and CAS# signals and is latched at the positive edges of CLK. The WE# input is
used to select the BankActivate or Precharge command and Read or Write command.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
LDQM,
UDQM
Input
Data Input/Output Mask: Controls output buffers in read mode and masks
DQ0-DQ15
Input /
Output
NC/RFU
-
VDDQ
Supply
DQ Power: Provide isolated power to DQs for improved noise immunity. ( 3.3V 0.3V )
VSSQ
Supply
DQ Ground: Provide isolated ground to DQs for improved noise immunity. ( 0V )
VDD
Supply
Power Supply: +3.3V 0.3V
VSS
Supply
Ground
Input data in write mode.
Data I/O: The DQ0-15 input and output data are synchronized with the positive edges of
CLK. The I/Os are maskable during Reads and Writes.
No Connect: These pins should be left unconnected.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 4 shows the
truth table for the operation commands.
Table 4. Truth Table (Note (1), (2))
Command
State
CKEn-1 CKEn DQM BA0,1 A10 A0-9,11
Idle(3)
H
X
X
V
BankPrecharge
Any
H
X
X
V
L
PrechargeAll
Any
H
X
X
X
Write
Active(3)
H
X
V
Write and AutoPrecharge
Active(3)
H
X
Read
Active(3)
H
Read and Autoprecharge
Active(3)
Mode Register Set
No-Operation
BankActivate
L
L
H
H
X
L
L
H
L
H
X
L
L
H
L
V
L
L
H
L
L
V
V
H
Column
address
(A0 ~ A8)
L
H
L
L
X
V
V
L
L
H
L
H
H
X
V
V
H
Column
address
(A0 ~ A8)
L
H
L
H
Idle
H
X
X
L
L
L
L
Any
H
X
X
X
X
X
L
H
H
H
Active(4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
AutoRefresh
Idle
H
H
X
X
X
X
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
H
X
X
X
L
H
H
H
Burst Stop
Row address
CS# RAS# CAS# WE#
OP code
(SelfRefresh)
Clock Suspend Mode Entry
Power Down Mode Entry
Clock Suspend Mode Exit
Power Down Mode Exit
Active
Any(5)
H
H
L
X
L
X
X
X
X
X
X
X
Active
L
H
X
X
X
X
X
X
X
X
Any
L
H
X
X
X
X
H
X
X
X
L
H
H
H
(PowerDown)
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Mask/Output Disable
Active
H
X
H
X
X
X
X
X
X
X
Note: 1. V=Valid, X=Don't Care L=Low level H=High level
2. CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BA signal.
4. Device state is 1, 2, 4, 8, and full page burst operation.
5. Power Down Mode cannot enter in the burst operation.
When this command is asserted in the burst cycle, device state is clock suspend mode.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Commands
1
BankActivate
(RAS# = "L", CAS# = "H", WE# = "H", BAs = Bank, A0-A11 = Row Address)
The BankActivate command activates the idle bank designated by the BA0, 1 signals. By latching the row
address on A0 to A11 at the time of this command, the selected row access is initiated. The read or write
operation in the same bank can occur after a time delay of t RCD (min.) from the time of bank activation. A
subsequent BankActivate command to a different row in the same bank can only be issued after the previous
active row has been precharged (refer to the following figure). The minimum time interval between successive
BankActivate commands to the same bank is defined by tRC (min.). The SDRAM has four internal banks on the
same chip and shares part of the internal circuitry to reduce chip area; therefore, it restricts the back-to-back
activation of the two banks. tRRD (min.) specifies the minimum time required between activating different banks.
After this command is used, the Write command and the Block Write command perform the no mask write
operation.
Figure 3. BankActivate Command Cycle (Burst Length = n)
T0
T1
T2
T3
Tn+3
Tn+4
Tn+5
Tn+6
CLK
ADDRESS
Bank A
Row Addr.
Bank A
Col Addr.
Bank B
Row Addr.
R/W A with
AutoPrecharge
Bank B
Activate
RAS# - CAS# delay(tRCD)
COMMAND
Bank A
Activate
NOP
NOP
Bank A
Row Addr.
RAS# - RAS# delay time(tRRD)
NOP
NOP
Bank A
Activate
RAS# - Cycle time(tRC)
AutoPrecharge
Begin
2
Don’t Care
BankPrecharge command
(RAS# = "L", CAS# = "H", WE# = "L", BAs = Bank, A10 = "L", A0-A9 and A11 = Don't care)
The BankPrecharge command precharges the bank disignated by BA signal. The precharged bank is switched
from the active state to the idle state. This command can be asserted any time after tRAS(min.) is satisfied from
the BankActivate command in the desired bank. The maximum time any bank can be active is specified by
tRAS(max.). Therefore, the precharge function must be performed in any active bank within t RAS(max.). At the
end of precharge, the precharged bank is still in the idle state and is ready to be activated again.
3
PrechargeAll command
(RAS# = "L", CAS# = "H", WE# = "L", BAs = Don’t care, A10 = "H", A0-A9 and A11 = Don't care)
The PrechargeAll command precharges all banks simultaneously and can be issued even if all banks are not in
the active state. All banks are then switched to the idle state.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
4 Read command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "L", A0-A8 = Column Address)
The Read command is used to read a burst of data on consecutive clock cycles from an active row in an active
bank. The bank must be active for at least tRCD (min.) before the Read command is issued. During read bursts,
the valid data-out element from the starting column address will be available following the CAS latency after the
issue of the Read command. Each subsequent data-out element will be valid by the next positive clock edge
(refer to the following figure). The DQs go into high-impedance at the end of the burst unless other command is
initiated. The burst length, burst sequence, and CAS latency are determined by the mode register, which is
already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column
0 and continue).
Figure 4. Burst Read Operation (Burst Length = 4, CAS# Latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
READ A
NOP
CAS# Latency=2
tCK2, DQ
NOP
DOUT A0
CAS# Latency=3
tCK3, DQ
NOP
NOP
NOP
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
NOP
NOP
NOP
DOUT A3
The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e. DQM latency
is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a
subsequent Read or Write command to the same bank or the other active bank before the end of the burst
length. It may be interrupted by a BankPrecharge/ PrechargeAll command to the same bank too. The interrupt
coming from the Read command can occur on any clock cycle following a previous Read command (refer to the
following figure).
Figure 5. Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
READ A
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
READ B
NOP
DOUT A0
NOP
NOP
NOP
NOP
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
NOP
NOP
DOUT B3
The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write
command. The DQMs must be asserted (HIGH) at least two clocks prior to the Write command to suppress
data-out on the DQ pins. To guarantee the DQ pins against I/O contention, a single cycle with high-impedance
on the DQ pins must occur between the last read data and the Write command (refer to the following three
figures). If the data output of the burst read occurs at the second clock of the burst write, the DQMs must be
asserted (HIGH) at least one clock prior to the Write command to avoid internal bus contention.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 6. Read to Write Interval (Burst Length 4, CAS# Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T9
T8
CLK
DQM
COMMAND
NOP
NOP
Bank A
Activate
NOP
NOP
READ A
WRITE A
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
CAS# Latency=2
tCK2, DQ
Figure 7. Read to Write Interval (Burst Length 4, CAS# Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
NOP
READ A
NOP
NOP
WRITE B
NOP
NOP
NOP
DIN B0
DIN B1
DIN B2
DIN B3
CAS# Latency=2
tCK2, DQ
Must be Hi-Z before
the Write Command
Don’t Care
Figure 8. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
READ A
NOP
NOP
CAS# Latency=3
tCK3, DQ
NOP
DOUT A0
NOP
WRITE B
NOP
NOP
DIN B0
DIN B1
DIN B2
Must be Hi-Z before
the Write Command
Don’t Care
A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll
command to the same bank. The following figure shows the optimum time that BankPrecharge/ PrechargeAll
command is issued in different CAS latency.
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 9. Read to Precharge (CAS# Latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Bank,
Col A
ADDRESS
Bank
Row
Bank (s)
tRP
COMMAND
READ A
NOP
CAS# Latency=2
tCK2, DQ
NOP
DOUT A0
CAS# Latency=3
tCK3, DQ
5
NOP
Precharge
NOP
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
NOP
Activate
NOP
DOUT A3
Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A8 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the read
operation. Once this command is given, any subsequent command cannot occur within a time delay of {tRP (min.)
+ burst length}. At full-page burst, only the read operation is performed in this command and the auto precharge
function is ignored.
6
Write command
(RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "L", A0-A8 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active
bank. The bank must be active for at least tRCD (min.) before the Write command is issued. During write bursts,
the first valid data-in element will be registered coincident with the Write command. Subsequent data elements
will be registered on each successive positive clock edge (refer to the following figure). The DQs remain with
high-impedance at the end of the burst unless another command is initiated. The burst length and burst
sequence are determined by the mode register, which is already programmed. A full-page burst will continue
until terminated (at the end of the page it will wrap to column 0 and continue).
Figure 10. Burst Write Operation (Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
NOP
DQ
WRITE A
NOP
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
don’t care
NOP
NOP
NOP
The first data element and the write
are registered on the same clock edge
A write burst without the auto precharge function may be interrupted by a subsequent Write, BankPrecharge/
PrechargeAll, or Read command before the end of the burst length. An interrupt coming from Write command
can occur on any clock cycle following the previous Write command (refer to the following figure).
NDS76Pv1.6-128Mb(x16)20180927
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128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 11. Write Interrupted by a Write (Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
NOP
DQ
WRITE A
WRITE B
NOP
NOP
NOP
DIN A0
DIN B0
DIN B1
DIN B2
DIN B3
NOP
NOP
NOP
The Read command that interrupts a write burst without auto precharge function should be issued one cycle
after the clock edge in which the last data-in element is registered. In order to avoid data contention, input data
must be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer
to the following figure). Once the Read command is registered, the data inputs will be ignored and writes will
not be executed.
Figure 12. Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
NOP
WRITE A
READ B
CAS# Latency=2
tCK2, DQ
DIN A0
don’t care
CAS# Latency=3
tCK3, DQ
DIN A0
don’t care
NOP
don’t care
NOP
NOP
NOP
NOP
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT B0
DOUT B1
DOUT B2
NOP
DOUT B3
Input data must be removed from the DQ at
least one clock cycle before the Read data
appears on the outputs to avoid data contention
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function
should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals
tWR/tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input data,
starting with the clock edge following the last data-in element and ending with the clock edge on which the
BankPrecharge/PrechargeAll command is entered (refer to the following figure).
NDS76Pv1.6-128Mb(x16)20180927
12
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 13. Write to Precharge
T0
T1
T2
T3
T4
T5
T6
T7
CLK
DQM
tRP
COMMAND
ADDRESS
WRITE
NOP
NOP
Bank
Col n
Precharge
NOP
NOP
Activate
NOP
ROW
Bank (s)
tWR
DQ
DIN
n
DIN
N+1
Don’t Care
Note: The DQMs can remain low in this example if the length of the write burst is 1 or 2.
7
Write and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H", A0-A8 =
Column Address)
The Write and AutoPrecharge command performs the precharge operation automatically after the write
operation. Once this command is given, any subsequent command cannot occur within a time delay of {(burst
length -1) + tWR + tRP (min.)}. At full-page burst, only the write operation is performed in this command and the
auto precharge function is ignored.
Figure 14. Burst Write with Auto-Precharge (Burst Length = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CLK
COMMAND
Bank A
Activate
NOP
NOP
WRITE A
Auto Precharge
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
tDAL
DQ
DIN A0
tDAL=tWR+tRP
8
DIN A1
Begin AutoPrecharge
Bank can be reactivated at
completion of tDAL
Mode Register Set command (RAS# = "L", CAS# = "L", WE# = "L", A0-A11 = Register Data)
The mode register stores the data for controlling the various operating modes of SDRAM. The Mode Register
Set command programs the values of CAS latency, Addressing Mode and Burst Length in the Mode register to
make SDRAM useful for a variety of different applications. The default values of the Mode Register after powerup are undefined; therefore, this command must be issued at the power-up sequence. The state of pins A0~A9
and A11 in the same cycle is the data written to the mode register. Two clock cycles are required to complete
the write in the mode register (refer to the following figure). The contents of the mode register can be changed
using the same command and the clock cycle requirements during operation as long as all banks are in the idle
state.
NDS76Pv1.6-128Mb(x16)20180927
13
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Table 5. Mode Register Bitmap
BA0,1 A11,A10 A9
RFU* RFU*
WBL
A9
0
1
A8
A7
Test Mode
Write Burst Length
Burst
Single Bit
A8
0
1
0
A7
0
0
1
A6
A5
A4
CAS Latency
A3
BT
A2
Test Mode
Normal
Vendor Use Only
Vendor Use Only
A3
0
1
A1
A0
Burst Length
Burst Type
Sequential
Interleave
A6
0
0
0
0
1
A5
A4
CAS Latency
A2
A1
A0
Burst Length
0
0
Reserved
0
0
0
1
0
1
Reserved
0
0
1
2
1
0
2 clocks
0
1
0
4
1
1
3 clocks
0
1
1
8
0
0
Reserved
1
1
1
Full Page (Sequential)
All others Reserved
All others Reserved
*Note: RFU (Reserved for future use) should stay “0” during MRS cycle.
Figure 15. Mode Register Set Cycle
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
CKE
tMRD
CS#
RAS#
CAS#
WE#
BA0,1
A10
Address Key
A0-A9,
A11
DQM
tRP
DQ
Hi-Z
PrechargeAll
NDS76Pv1.6-128Mb(x16)20180927
Mode Register
Set Command
14
Any
Command
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
•
8Mx16 - NDS76P
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be
2, 4, 8, or full page.
Table 6. Burst Length Field
A2
A1
A0
Burst Length
0
0
0
1
0
0
1
2
0
1
0
4
0
1
1
8
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Full Page
Full Page Length: 512
•
Burst Type Field (A3)
The Burst Type can be one of two modes, Interleave Mode or Sequential Mode.
Table 7. Burst Type Field
•
A3
Burst Type
0
Sequential
1
Interleave
Burst Definition, Addressing Sequence of Sequential and Interleave Mode
Table 8. Burst Definition
Burst Length
2
4
8
Full page
Start Address
A2
A1
A0
X
X
0
X
X
1
X
0
0
X
0
1
X
1
0
X
1
1
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
location = 0-511
NDS76Pv1.6-128Mb(x16)20180927
Sequential
0, 1
1, 0
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1, 2
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 0, 1, 2, 3, 4
6, 7, 0, 1, 2, 3, 4, 5
7, 0, 1, 2, 3, 4, 5, 6
n, n+1, n+2, n+3, …511, 0,
1, 2, … n-1, n, …
15
Interleave
0, 1
1, 0
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
Not Supported
128Mb (x16) - SDR Synchronous DRAM
•
8Mx16 - NDS76P
CAS Latency Field (A6~A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first read data.
The minimum whole value of CAS Latency depends on the frequency of CLK. The minimum whole value
satisfying the following formula must be programmed into this field.
tCAC(min) CAS Latency X tCK
Table 9. CAS Latency Field
•
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2 clocks
0
1
1
3 clocks
1
X
X
Reserved
Test Mode Field (A8~A7)
These two bits are used to enter the test mode and must be programmed to "00" in normal operation.
Table 10. Test Mode Field
•
A8
A7
Test Mode
0
0
normal mode
0
1
Vendor Use Only
1
X
Vendor Use Only
Write Burst Length (A9)
This bit is used to select the write burst mode. When the A9 bit is "0", the Burst-Read-Burst-Write
mode is selected. When the A9 bit is "1", the Burst-Read-Single-Write mode is selected.
Table 11. Write Burst Length
A9
Write Burst Mode
0
Burst-Read-Burst-Write
1
Burst-Read-Single-Write
Note: A10 and BA should stay “L” during mode set cycle.
9
No-Operation command
(RAS# = "H", CAS# = "H", WE# = "H")
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS# is Low). This
prevents unwanted commands from being registered during idle or wait states.
10
Burst Stop command
(RAS# = "H", CAS# = "H", WE# = "L")
The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command is only
effective in a read/write burst without the auto precharge function. The terminated read burst ends after a delay
equal to the CAS latency (refer to the following figure). The termination of a write burst is shown in the following
figure.
NDS76Pv1.6-128Mb(x16)20180927
16
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 16. Termination of a Burst Read Operation (Burst Length ＞ 4, CAS# Latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
READ A
NOP
NOP
Burst
Stop
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
NOP
NOP
NOP
NOP
NOP
The burst ends after a delay equal to the CAS# Latency
CAS# Latency=2
tCK2, DQ
DOUT A0
CAS# Latency=3
tCK3, DQ
DOUT A3
Figure 17. Termination of a Burst Write Operation (Burst Length = X)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
NOP
DQ
WRITE A
NOP
NOP
Burst
Stop
DIN A0
DIN A1
DIN A2
don’t care
NOP
NOP
NOP
NOP
11 Device Deselect command (CS# = "H")
The Device Deselect command disables the command decoder so that the RAS#, CAS#, WE# and Address
inputs are ignored, regardless of whether the CLK is enabled. This command is similar to the No Operation
command.
12
AutoRefresh command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "H", A11 = “Don‘t care, A0-A9 = Don't care)
The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-beforeRAS# (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it must be issued each time
a refresh is required. The addressing is generated by the internal refresh controller. This makes the address
bits a "don't care" during an AutoRefresh command. The internal refresh counter increments automatically on
every auto refresh cycle to all of the rows. The refresh operation must be performed 4096 times within 16, 32,
or 64ms depending on operating temperature. The time required to complete the auto refresh operation is
specified by tRC(min.). To provide the AutoRefresh command, all banks need to be in the idle state and the
device must not be in power down mode (CKE is high in the previous cycle). This command must be followed
by NOPs until the auto refresh operation is completed. The precharge time requirement, t RP(min), must be met
before successive auto refresh operations are performed.
13
SelfRefresh Entry command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "L", A0-A9 = Don't care)
The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for data
retention and low power operation. Once the SelfRefresh command is registered, all the inputs to the SDRAM
become "don't care" with the exception of CKE, which must remain LOW. The refresh addressing and timing is
internally generated to reduce power consumption. The SDRAM may remain in SelfRefresh mode for an
indefinite period. The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on
CKE (SelfRefresh Exit command).
NDS76Pv1.6-128Mb(x16)20180927
17
128Mb (x16) - SDR Synchronous DRAM
14
8Mx16 - NDS76P
SelfRefresh Exit command
This command is used to exit from the SelfRefresh mode. Once this command is registered, NOP or Device
Deselect commands must be issued for t XSR(min.) because time is required for the completion of any bank
currently being internally refreshed. If auto refresh cycles in bursts are performed during normal operation, a
burst of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the SelfRefresh
mode.
15
Clock Suspend Mode Entry / PowerDown Mode Entry command (CKE = "L")
When the SDRAM is operating the burst cycle, the internal CLK is suspended (masked) from the subsequent
cycle by issuing this command (asserting CKE "LOW"). The device operation is held intact while CLK is
suspended. On the other hand, when all banks are in the idle state, this command performs entry into the
PowerDown mode. All input and output buffers (except the CKE buffer) are turned off in the PowerDown mode.
The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (16ms,
32ms, or 64ms) since the command does not perform any refresh operations.
16
Clock Suspend Mode Exit / PowerDown Mode Exit command (CKE= "H")
When the internal CLK has been suspended, the operation of the internal CLK is reinitiated from the subsequent
cycle by providing this command (asserting CKE "HIGH", the command should be NOP or deselect). When the
device is in the PowerDown mode, the device exits this mode and all disabled buffers are turned on to the active
state. tPDE(min.) is required when the device exits from the PowerDown mode. Any subsequent commands can
be issued after one clock cycle from the end of this command.
17
Data Write / Output Enable, Data Mask / Output Disable command (DQM = "L", "H")
During a write cycle, the DQM signal functions as a Data Mask and can control every word of the input data.
During a read cycle, the DQM functions as the controller of output buffers. DQM is also used for device selection,
byte selection and bus control in a memory system.
Table 12. Absolute Maximum Rating
Rating
Symbol
Item
VIN, VOUT
Input, Output Voltage
-1.0 ~ 4.6
V
1
VDD, VDDQ
Power Supply Voltage
-1.0 ~ 4.6
V
1
Extended Test
0 ~ 70
°C
1
Industrial Temperature
-40 ~ 85
°C
1
Automotive Temperature
-40 ~ 105
°C
1
TA
Ambient Temperature
-5I (200)/-6I (166)
Unit Note
TSTG
Storage Temperature
-55 ~ 125
°C
1
TSOLDER
Soldering Temperature (10 second)
260
°C
1
PD
Power Dissipation
1
W
1
IOS
Short Circuit Output Current
50
mA
1
NDS76Pv1.6-128Mb(x16)20180927
18
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Table 13. Recommended D.C. Operating Conditions (TA = -40~85°C or -40~105°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit Note
VDD
Power Supply Voltage
3.0
3.3
3.6
V
2
VDDQ
Power Supply Voltage(for I/O Buffer)
3.0
3.3
3.6
V
2
VIH
LVTTL Input High Voltage
2.0
3.0
VDDQ+0.3
V
2
VIL
LVTTL Input Low Voltage
-0.3
0
0.8
V
2
IIL
Input Leakage Current
( 0V VIN VDD, All other pins not under test = 0V )
-10
-
10
A
IOL
Output Leakage Current
Output disable, 0V VOUT VDDQ)
-10
-
10
A
VOH
LVTTL Output "H" Level Voltage
( IOUT = -2mA )
2.4
-
-
V
VOL
LVTTL Output "L" Level Voltage
( IOUT = 2mA )
-
-
0.4
V
Table 14. Capacitance (VDD = 3.3V, f = 1MHz, TA = 25°C)
Symbol
CI
CI/O
Parameter
Min.
Max.
Unit
Input Capacitance
2
4
pF
Input/Output Capacitance
4
6
pF
Note: These parameters are periodically sampled and are not 100% tested.
NDS76Pv1.6-128Mb(x16)20180927
19
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Table 15. D.C. Characteristics
(VDD = 3.3V 0.3V, TA = -40~85°C or -40~105°C)
Description/Test condition
Operating Current
tRC tRC(min), Outputs Open
One bank active
Precharge Standby Current in non-power down mode
tCK = 15ns, CS# VIH(min), CKE VIH
Input signals are changed every 2clks
Precharge Standby Current in non-power down mode
tCK = , CLK VIL(max), CKE VIH
Precharge Standby Current in power down mode
tCK = 15ns, CKE VIL(max)
Precharge Standby Current in power down mode
tCK = , CKE VIL(max)
Active Standby Current in non-power down mode
tCK = 15ns, CKE VIH(min), CS# VIH(min)
Input signals are changed every 2clks
Active Standby Current in non-power down mode
CKE VIH(min), CLK VIL(max), tCK =
Operating Current (Burst mode)
tCK =tCK(min), Outputs Open, Multi-bank interleave
Refresh Current
tRC tRC(min)
Self Refresh Current
CKE 0.2V ; for other inputs VIH VDD - 0.2, VIL 0.2V
NDS76Pv1.6-128Mb(x16)20180927
20
Symbol
PC200
(ET/IT)
PC166
(ET/IT)
Max.
PC166
(AT)
IDD1
55
50
60
IDD2N
20
20
24
IDD2NS
18
18
22
IDD2P
2
2
2.4
IDD2PS
2
2
2.4
IDD3N
40
35
42
IDD3NS
40
35
42
IDD4
65
62
75
3, 4
IDD5
75
70
84
3
IDD6
2
2
4
Unit Note
3
mA
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Table 16. Electrical Characteristics and Recommended A.C. Operating Conditions
(VDD = 3.3V±0.3V, TA = -40~85°C or -40~105°C) (Note: 5, 6, 7, 8)
Symbol
tRC
PC200
(ET/IT)
A.C. Parameter
Row cycle time
(same bank)
tRCD
tRP
Precharge to refresh/row activate
command (same bank)
tRRD
Row activate to row activate delay
(different banks)
Max.
Min
Max.
Min
Max.
55
-
60
-
60
-
15
-
18
-
18
-
15
-
18
-
18
-
10
-
12
-
12
-
40
100k
42
100k
42
100k
tWR
Write recovery time
10
-
12
-
12
-
tCCD
CAS# to CAS# Delay time
1
-
1
-
1
-
-
-
10
-
10
-
6
-
CL* = 2
tCK
Clock cycle time
CL* = 3
Unit
Note
ns
Row activate to precharge time
(same bank)
PC166
(AT)
Min
RAS# to CAS# delay
(same bank)
tRAS
PC166
(ET/IT)
5
-
6
-
tCK
9
tCH
Clock high time
2
-
2
-
2
-
10
tCL
Clock low time
2
-
2
-
2
-
10
-
-
-
6
-
6.5
-
4.5
-
5
-
5
tAC
Access time from CLK
(positive edge)
CL* = 2
CL* = 3
10
ns
tOH
Data output hold time
2
-
2.5
-
2.5
-
tLZ
Data output low impedance
0
-
0
-
0
-
tHZ
Data output high impedance
-
4.5
-
5
-
5
8
tIS
Data/Address/Control Input set-up time
1.5
-
1.5
-
1.5
-
10
tIH
Data/Address/Control Input hold time
0.8
-
0.8
-
0.8
-
10
tPDE
Power Down Exit set-up time
tIS+ tCK
-
tIS+ tCK
-
tIS+ tCK
-
tREFI
Refresh Interval Time
-
15.6
-
15.6
-
7.8
s
tXSR
Exit Self Refresh to Read Command time tIS+ tRC
-
tIS+ tRC
-
tIS+ tRC
-
ns
9
* CL is CAS Latency.
Notes:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
2. All voltages are referenced to VSS. VIH (Max) = 4.6V for pulse width ≤ 3ns. VIL (Min) = -1.0V for pulse width ≤ 3ns.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum
value of tCK and tRC. Input signals are changed one time during every 2 tCK.
4. These parameters depend on the output loading. Specified values are obtained with the output open.
5. Power-up sequence is described in Note 11.
6. A.C. Test Conditions
NDS76Pv1.6-128Mb(x16)20180927
21
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Table 17. LVTTL Interface
Reference Level of Output Signals
1.4V / 1.4V
Output Load
Reference to the Under Output Load (B)
Input Signal Levels
2.4V / 0.4V
Transition Time (Rise and Fall) of Input Signals
1ns
Reference Level of Input Signals
1.4V
Figure 18.1 LVTTL D.C. Test Load (A)
Figure 18.2 LVTTL A.C. Test Load (B)
1.4V
3.3V
50
1.2k
Z0= 50
Output
Output
30pF
30pF
870
7. Transition times are measured between VIH and VIL. Transition (rise and fall) of input signals are in a fixed slope (1
ns).
8. tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels.
9. If clock rising time is longer than 1 ns, (tR / 2 -0.5) ns should be added to the parameter.
10. Assumed input rise and fall time tT (tR & tF) = 1 ns
If tR or tF is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2 - 1] ns should be
added to the parameter.
11. Power up Sequence
Power up must be performed in the following sequence.
1) Power must be applied to VDD and VDDQ (simultaneously) when CKE= “L”, DQM= “H” and all input signals are
held "NOP" state.
2) Start clock and maintain stable condition for minimum 200 s, then bring CKE= “H” and, it is recommended that
DQM is held "HIGH" (VDD levels) to ensure DQ output is in high impedance.
3) All banks must be precharged.
4) Mode Register Set command must be asserted to initialize the Mode register.
5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device.
* The Auto Refresh command can be issue before or after Mode Register Set command
NDS76Pv1.6-128Mb(x16)20180927
22
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Timing Waveforms
Figure 19. AC Parameters for Write Timing
(Burst Length=4)
T0
CLK
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
tCH
tCL
CKE
tIS
tIS
Begin Auto
Precharge Bank A
tIH
Begin Auto
Precharge Bank B
CS#
RAS#
CAS#
WE#
BA0,1
tIH
A10
RAx
RBx
RAy
tIS
A0-A9,
A11
RAx
CAx
RBx
CBx
RAy
CAy
DQM
tRCD
tDAL
tIS
tRC
DQ
Ax0
Activate
Command
Bank A
Ax1
Write with
Auto Precharge
Command
Bank A
Ax2
Activate
Command
Bank B
tWR
tIH
Hi-Z
Ax3
Bx0
Bx1
Write with
Auto Precharge
Command
Bank B
Bx2
Bx3
Ay0
Activate
Command
Bank A
Write
Command
Bank A
Ay1
Ay2
Ay3
Precharge
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
23
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 20. AC Parameters for Read Timing
(Burst Length=2, CAS# Latency=2)
T0
CLK
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16
tCH tCL
CKE
tIS
Begin Auto
Precharge Bank B
tIS
tIH
tIH
CS#
RAS#
CAS#
WE#
BA0,1
tIH
A10
RAx
RBx
RAy
tIS
A0-A9,
A11
RAx
CAx
RBx
CBx
RAy
tRRD
tRAS
DQM
tRC
tAC
tRCD
DQ
Hi-Z
tRP
tHZ
tLZ
Ax0
Bx0
Ax1
tHZ
tOH
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Bx1
Read with
Precharge
Auto Precharge Command
Command
Bank A
Bank B
Activate
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
24
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 21. Auto Refresh
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
tRP
tRC
tRC
CAx
tRCD
DQM
DQ
Ax0
Precharge All
Command
Auto Refresh
Command
Auto Refresh
Command
Activate
Command
Bank A
Ax1
Read
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
25
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 22. Power on Sequence and Auto Refresh
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High Level
Is reguired
Minimum for 2 Refresh Cycles are required
CS#
RAS#
CAS#
WE#
BA0,1
A10
Address Key
A0-A9,
A11
DQM
DQ
tRP
tMRD
Hi-Z
Precharge All
Command
Inputs must be
Stable for
200μs
1st Auto Refresh(*)
Command
2nd Auto Refresh(*)
Command
Mode Register
Set Command
Don’t Care
Note(*): The Auto Refresh command can be issue before or after Mode Register Set command
NDS76Pv1.6-128Mb(x16)20180927
Any
Command
26
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 23. Self Refresh Entry & Exit Cycle
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
CLK
*Note 2
CKE
tXSR
*Note 5
*Note 1
*Note 3,4
*Note 8
tPDE
tIS tIH
*Note 6
tIS
*Note 7
CS#
RAS#
*Note 9
CAS#
WE#
BA0,1
A10
A0-A9,
A11
DQM
DQ
Hi-Z
Hi-Z
Self Refresh Exit
Self Refresh Entry
Auto Refresh
Don’t Care
Note:
To Enter SelfRefresh Mode
1. CS#, RAS# & CAS# with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays "low".
4. Once the device enters SelfRefresh mode, minimum tRAS is required before exit from SelfRefresh.
5.
6.
7.
8.
9.
To Exit SelfRefresh Mode
System clock restart and be stable before returning CKE high.
Enable CKE and CKE should be set high for valid setup time and hold time.
CS# starts from high.
Minimum tXSR is required after CKE going high to complete SelfRefresh exit.
4096 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses
burst refresh.
NDS76Pv1.6-128Mb(x16)20180927
27
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 24.1. Clock Suspension During Burst Read (Using CKE)
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
DQM
DQ
tHZ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Clock Suspend
1 Cycle
Ax2
Clock Suspend
2 Cycles
Ax3
Clock Suspend
3 Cycles
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
28
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 24.2. Clock Suspension During Burst Read (Using CKE)
(Burst Length=4, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
DQM
DQ
tHZ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Clock Suspend
1 Cycle
Ax2
Clock Suspend
2 Cycles
Ax3
Clock Suspend
3 Cycles
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
29
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 25. Clock Suspension During Burst Write (Using CKE)
(Burst Length=4)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
DQM
DQ
Hi-Z
DAx0
Activate
Command
Bank A
DAx1
Clock Suspend
1 Cycle
Write
Command
Bank A
NDS76Pv1.6-128Mb(x16)20180927
DAx2
Clock Suspend
2 Cycles
DAx3
Clock Suspend
3 Cycles
Don’t Care
30
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 26. Power Down Mode and Clock Suspension
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
CLK
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
tIH tIS
tPDE
CKE
Valid
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
DQM
DQ
tHZ
Hi-Z
Ax0
ACTIVE
Activate
Read
STANDBY
Command
Command
Bank A
Bank A
Power Down
Power Down
Mode
Exit
Mode Entry
NDS76Pv1.6-128Mb(x16)20180927
Ax1
Ax2
Clock Suspension
Start
Ax3
Clock Suspension
End
Precharge
Command
Bank A
Power Down
Mode Entry
31
PRECHARGE
STANDBY
Power Down
Mode Exit
Any
Command
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 27.1. Random Column Read (Page within same Bank)
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAw
A0-A9,
A11
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi-Z
Aw0
Activate
Command
Bank A
Read
Command
Bank A
Aw1
Aw2
Aw3
Read
Command
Bank A
Ax0
Ax1
Read
Command
Bank A
Ay0
Ay1
Ay2
Ay3
Precharge
Command
Bank A
Az0
Activate
Command
Bank A
Read
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
32
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 27.2. Random Column Read (Page within same Bank)
(Burst Length=4, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAw
A0-A9,
A11
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi-Z
Aw0
Activate
Command
Bank A
Read
Command
Bank A
Aw1
Aw2
Read
Command
Bank A
Aw3
Ax0
Read
Command
Bank A
Ax1
Ay0
Ay1
Ay2
Precharge
Command
Bank A
Ay3
Activate
Command
Bank A
Read
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
33
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 28. Random Column Write (Page within same Bank)
(Burst Length=4)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RBw
A0-A9,
A11
RBw
RBz
CBw
RBz
CBy
CBx
CBz
DQM
DQ
Hi-Z
DBw0 DBw1 DBw2 DBw3 DBx0
Activate
Command
Bank B
Write
Command
Bank B
DBx1
Write
Command
Bank B
DBy0 DBy1 DBy2
Write
Command
Bank B
DBz0
DBy3
Precharge
Command
Bank B
Activate
Command
Bank B
DBz1
Write
Command
Bank B
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
34
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 29.1. Random Row Read (Interleaving Banks)
(Burst Length=8, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RBx
A0-A9,
A11
RBx
CBx
RBy
RAx
CAx
RBy
tAC
tRCD
DQM
DQ
RAx
CBy
tRP
Hi-Z
Bx0
Activate
Command
Bank B
Bx1
Read
Command
Bank B
NDS76Pv1.6-128Mb(x16)20180927
Bx2
Bx3
Bx4
Bx5
Bx6
Activate
Command
Bank A
Bx7
Ax0
Read
Command
Bank A
Precharge
Command
Bank B
35
Ax1
Ax2
Ax3
Activate
Command
Bank B
Ax4
Ax5
Ax6
Ax7
Read
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 29.2. Random Row Read (Interleaving Banks)
(Burst Length=8, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RBx
A0-A9,
A11
RBx
CBx
RBy
RAx
CAx
RBy
tAC
tRCD
DQM
DQ
RAx
CBy
tRP
Hi-Z
Bx0
Activate
Command
Bank B
Read
Command
Bank B
Bx1
Bx2
Bx3
Activate
Command
Bank A
Bx4
Bx5
Bx6
Read
Command
Bank A
Bx7
Ax0
Precharge
Command
Bank B
Ax1
Ax2
Ax3
Activate
Command
Bank B
Ax4
Ax5
Ax6
Read
Command
Bank B
Ax7
By0
Precharge
Command
Bank A
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
36
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 30. Random Row Write (Interleaving Banks)
(Burst Length=8)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
RAy
RBx
CBx
tRCD
DQM
DQ
RBx
RAy
tWR*
CAy
tRP
tWR*
Hi-Z
DAx0
Activate
Command
Bank A
DAx1
DAx2 DAx3
Write
Command
Bank A
DAx4
DAx5 DAx6
Activate
Command
Bank B
DAx7
DBx0
Write
Command
Bank B
Precharge
Command
Bank A
DBx4
DBx5 DBx6
Activate
Command
Bank A
DBx7
DAy0
DAy1 DAy2
Write
Command
Bank A
DAy3
Precharge
Command
Bank B
Don’t Care
*tWR>tWR (min.)
NDS76Pv1.6-128Mb(x16)20180927
DBx1 DBx2 DBx3
37
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 31.1. Read and Write Cycle
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
CAy
CAz
DQM
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Ax2
Ax3
DAy0 DAy1
Write
Command
Bank A
DAy3
The Write Data
is Masked with a
Zero Clock
Latency
Az0
Read
Command
Bank A
Az1
Az3
The Read Data
is Masked with a
Two Clock
Latency
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
38
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 31.2. Read and Write Cycle
(Burst Length=4, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
CAy
CAz
DQM
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Ax1
Ax2
Ax3
DAy0 DAy1
Read
Command
Bank A
NDS76Pv1.6-128Mb(x16)20180927
Write
Command
Bank A
39
DAy3
The Write Data
is Masked with a
Zero Clock
Read
Latency
Command
Bank A
Az0
Az1
Az3
The Read Data
is Masked with a
Two Clock
Latency
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 32.1. Interleaving Column Read Cycle
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
T5 T6
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBx
CAy
RBx
CBw
CBx
Ax3
Bw0
CBy
CAy
CBz
tRCD
DQM
tAC
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Activate
Command
Bank B
Ax2
Read
Command
Bank B
Bw1
Read
Command
Bank B
Bx0
Bx1
Read
Command
Bank B
By0
By1
Read
Command
Bank A
Ay0
Ay1
Read
Command
Bank B
Bz0
Bz1
Precharge
Command
Bank A
Bz2
Bz3
Precharge
Command
Bank B
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
40
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 32.2. Interleaved Column Read Cycle
(Burst Length=4, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBx
CAx
RBx
CBx
CBy
CBz
CAy
tRCD
DQM
tAC
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
NDS76Pv1.6-128Mb(x16)20180927
Ax1
Ax2
Read
Command
Bank B
Ax3
Bx0
Read
Command
Bank B
Bx1
By0
Read
Command
Bank B
By1
Bz0
Read
Command
Bank A
Bz1
Ay0
Precharge
Command
Bank B
Ay1
Ay2
Ay3
Precharge
Command
Bank A
Don’t Care
41
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 33. Interleaved Column Write Cycle
(Burst Length=4)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBw
CAx
RBw
CBw
CBx
CBy
CAy
CBz
tWR
tRCD
tWR
DQM
tRRD>tRRD (min)
DQ
Hi-Z
DAx0
Activate
Command
Bank A
DAx1
DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0
Write
Command
Bank A
Activate
Command
Bank B
NDS76Pv1.6-128Mb(x16)20180927
Write
Command
Bank B
Write
Command
Bank B
42
DBy1
Write
Command
Bank B
DAy0 DAy1 DBz0
Write
Command
Bank A
DBz1
DBz2
Write
Command
Bank B
Precharge
Command
Bank A
DBz3
Precharge
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 34.1. Auto Precharge after Read Burst
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
Begin Auto
Precharge
Bank B
High
Begin Auto
Precharge
Bank A
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBx
CAx
RBy
RBx
CBx
CAy
RBy
CBy
RAz
tRP
DQM
DQ
RAz
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Activate
Command
Bank B
Ax2
Ax3
Bx0
Bx1
Bx2
Bx3
Read with
Auto precharge
Command
Bank A
Read with
Auto Precharge
Command
Bank B
Ay0
Ay1
Ay2
Activate
Command
Bank B
Ay3
By0
By1
By2
Read with
Activate
Auto Precharge Command
Command
Bank A
Bank B
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
43
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 34.2. Auto Precharge after Read Burst
(Burst Length=4, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBy
RBx
CAx
RBx
CBx
CAy
RBy
CBy
tRP
DQM
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
NDS76Pv1.6-128Mb(x16)20180927
Ax1
Ax2
Read with
Auto Precharge
Command
Bank B
Ax3
Bx0
Bx1
Bx2
Read with
Auto Precharge
Command
Bank A
Bx3
Ay0
Ay1
Activate
Command
Bank B
Ay2
Ay3
By0
By1
By2
Read with
Auto Precharge
Command
Bank B
Don’t Care
44
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 35. Auto Precharge after Write Burst
(Burst Length=4)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBy
RBx
CAx
RBx
CBx
CAy
RBy
CBy
tDAL
DQM
DQ
Hi-Z
DAx0 DAx1
Activate
Command
Bank A
DAx2
DAx3
Write
Command
Bank A
Activate
Command
Bank B
NDS76Pv1.6-128Mb(x16)20180927
DBx0 DBx1 DBx2
Write with
Auto Precharge
Command
Bank B
DBx3
DAy0 DAy1 DAy2
Write with
Auto Precharge
Command
Bank A
DAy3
DBy0 DBy1 DBy2
Activate
Command
Bank B
DBy3
Write with
Auto Precharge
Command
Bank B
Don’t Care
45
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 36.1. Full Page Read Cycle
(Burst Length=Full Page, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBy
RBx
CAx
RBx
CBx
RBy
tRP
DQM
DQ
Hi-Z
Ax
Activate
Command
Bank A
Read
Command
Bank A
Ax+1
Ax+2
Ax-2
Ax-1
Ax
Ax+1
Bx
Bx+1
Bx+2
Bx+3
The burst counter wraps
Activate
Read
Command from the highest order
Command
page address back to zero Bank B
Bank B
during this time interval
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
Bursting beginning with the starting address
NDS76Pv1.6-128Mb(x16)20180927
46
Bx+4
Bx+5
Bx+6
Precharge
Command
Bank B
Burst Stop
Command
Activate
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 36.2. Full Page Read Cycle
(Burst Length=Full Page, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBy
RBx
CAx
RBx
CBx
RBy
tRP
DQM
DQ
Hi-Z
Ax
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Ax+1
Ax+2
Ax-2
Ax-1
Ax
Ax+1
Bx
Bx+1
Bx+2
Read
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Bx+4
47
Bx+5
Precharge
Command
Bank B
Burst Stop
Command
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
Bursting beginning with the starting address
NDS76Pv1.6-128Mb(x16)20180927
Bx+3
Activate
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 37. Full Page Write Cycle
(Burst Length=Full Page)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RBy
RBx
CAx
RBx
CBx
RBy
DQM
Data is ignored
DQ
Hi-Z
DAx
Activate
Command
Bank A
DAx+1
Write
Command
Bank A
DAx+2
DAx+3
DAx-1
DAx
DAx+1
Activate
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
NDS76Pv1.6-128Mb(x16)20180927
DBx
DBx+1
DBx+2
DBx+3
DBx+4
DBx+5
Write
Command
Bank B
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address
48
Precharge
Command
Bank B
Burst Stop
Command
Activate
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 38. Byte Read and Write Operation
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
CAx
CAy
CAz
LDQM
UDQM
DQ0-DQ7
Ax0
DQ8-DQ15
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Ax2
Ax1
Ax2
Upper Byte
is masked
DAy1
Ax3
Lower Byte
is masked
DAy0
DAy1
Write
Command
Bank A
Day2
DAy3
Upper Byte
is masked
Az0
Read
Command
Bank A
Az1
Az2
Az1
Az2
Lower Byte
is masked
Az3
Lower Byte
is masked
Don’t Care
NDS76Pv1.6-128Mb(x16)20180927
49
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 39. Random Row Read (Interleaving Banks)
(Burst Length=4, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
High
Begin Auto
Precharge
Bank A
CS#
RAS#
CAS#
WE#
BA0,1
A10
RBu
A0-A9,
A11
RBu
RAu
CBu
RAu
CAu
RBw
RAv
RBv
RBv
CBv
tRP
RAv
CAv
RBw
tRP
tRP
DQM
DQ
Bu0
Activate
Command
Bank B
Bu1
Activate
Command
Bank A
Read
Bank B
with Auto
Precharge
NDS76Pv1.6-128Mb(x16)20180927
Bu2
Bu3
Read
Bank A
with Auto
Precharge
Au0
Au1
Au2
Activate
Command
Bank B
50
Au3
Bv0
Activate
Command
Bank A
Read
Bank B
with Auto
Precharge
Bv1
Bv2
Bv3
Read
Bank A
with Auto
Precharge
Av0
Av1
Av2
Av3
Activate
Command
Bank B
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 40. Full Page Random Column Read
(Burst Length=Full Page, CAS# Latency=2)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
RBx
A0-A9,
A11
RAx
RBx
RBw
CAx
CBx
CBy
CAy
CAz
CBz
RBw
tRP
DQM
tRRD
DQ
tRCD
Hi-Z
Ax0
Activate
Command
Bank A
Ax1
Bx0
Activate
Read
Command
Command
Bank B
Bank B
Read
Read
Command
Command
Bank A
Bank A
NDS76Pv1.6-128Mb(x16)20180927
Ay0
Ay1
Read
Command
Bank B
By0
By1
Read
Command
Bank A
Az0
Az1
Az2
Read
Command
Bank B
Bz0
Bz1
Bz2
Precharge
Activate
Command Bank B
Command
(Precharge Temination) Bank B
Don’t Care
51
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 41. Full Page Random Column Write
(Burst Length=Full Page)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
RBx
A0-A9,
A11
RAx
RBx
RBw
CAx
CBx
CBy
CAy
CAz
CBz
RBw
tWR
tRP
DQM
tRRD
DQ
tRCD
Hi-Z
DAx0 DAx1
Activate
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank A
DBx0
DAy0
DAy1 DBy0 DBy1
Write
Command
Bank B
Write
Command
Bank A
NDS76Pv1.6-128Mb(x16)20180927
Write
Command
Bank B
DAz0
DAz1
Write
Command
Bank A
DAz2
DBz0
DBz1
Write
Command
Bank B
DBz2
Precharge
Activate
Command Bank B
Command
(Precharge Temination) Bank B
Write Data
are masked
52
Don’t Care
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 42. Precharge Termination of a Burst
(Burst Length=4, 8 or Full Page, CAS# Latency=3)
T0
T1 T2 T3 T4
T5 T6
T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
High
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAx
A0-A9,
A11
RAx
RAy
CAx
RAz
RAy
tWR
CAy
RAz
tRP
tRP
DQM
DQ
DAx0 DAx1
Activate
Command
Bank B
Precharge
Write
Command
Command
Bank A
Bank A
Precharge Termination
of a Write Burst
Write Data are masked
NDS76Pv1.6-128Mb(x16)20180927
Ay0
Activate
Command
Bank A
Read
Command
Bank A
Ay1
Precharge
Command
Bank A
Ay2
Activate
Command
Bank A
Precharge Termination
of a Read Burst
Don’t Care
53
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 43. 54 Pin TSOP II Package Outline Drawing Information
28
HE
E
0.254
54
L
L1
1
27
B
S
Symbol
A
A1
A2
B
C
D
E
e
HE
L
L1
S
y
θ
e
y
Dimension in inches
Nom
Max
--0.047
--0.008
0.039
0.043
0.014
0.018
0.006
0.008
0.875
0.88
0.400
0.405
0.031
--0.463
0.471
--0.024
0.032
----0.028
------0.004
0°
--8°
Min
--0.002
0.035
0.010
0.004
0.87
0.395
--0.455
0.016
Notes:
1. Dimension D&E do not include interlead flash.
2. Dimension B does not include dambar protrusion/intrusion.
3. Dimension S includes end flash.
4. Controlling dimension: mm
NDS76Pv1.6-128Mb(x16)20180927
54
C
A1 A2
A
D
L
Min
--0.05
0.9
0.25
0.12
22.09
10.03
--11.56
0.4
------0°
L1
Dimension in mm
Nom
----1.0
0.35
0.165
22.22
10.16
0.8
11.76
0.5
0.84
0.71
-----
Max
1.2
0.2
1.1
0.45
0.21
22.35
10.29
--11.96
0.6
----0.1
8°
128Mb (x16) - SDR Synchronous DRAM
8Mx16 - NDS76P
Figure 44. 54 Ball FBGA Package Outline Drawing Information
A1 INDEX
Bottom View
TOP View
Side View
Symbol
A
A1
A2
D
E
D1
E1
e
b
F
Dimension in inches
Min
Nom
Max
--0.047
0.010
0.012
0.014
-0.033
-0.311
0.315
0.319
0.311
0.315
0.319
-0.252
--0.252
--0.031
-0.016
0.018
0.020
-0.126
--
NDS76Pv1.6-128Mb(x16)20180927
55
Dimension in mm
Min
Nom
Max
--1.20
0.25
0.30
0.35
-0.85
-7.90
8.00
8.10
7.90
8.00
8.10
-6.40
--6.40
--0.80
-0.40
0.45
0.50
-3.20
--
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