MC3761PJ4HAU

One-cell Lithium-ion/Lithium-polymer battery protection IC with integrated MOS-FET MC3761 series Outline MC3761 series are protection IC with integrated MOS-FET for protection of the rechargeable Lithium-ion or Lithiumpolymer battery.The overcharge, overdischarge and discharging and charging overcurrent protection of the rechargeable one-cell Lithium-ion or Lithium-polymer battery can be detected. Features （Unless otherwise specified, Ta=+25℃） (1) Range and accuracy of detection/release voltage ・ Overcharge detection voltage 4.20V to 4.70V, 5mV step Accuracy ±20mV Accuracy -50/+25mV(Ta=-40 to +85℃) ・ Overcharge release voltage Vdet1-0.4V to Vdet1,100mV step Accuracy -30/+20mV (Vdet1=Vrel1) Accuracy ±30mV (Vdet1≠Vrel1) ・ Overdischarge detection voltage 2.00V to 3.30V, 50mV step Accuracy ±30mV ・ Overdischarge release voltage Vdet2+0.4V to Vdet2,100mV step Accuracy -30/+40mV (Vdet2=Vrel2) Accuracy ±90mV (Vdet2≠Vrel2) ・ Discharging overcurrent detection voltage (Discharging overcurrent detection current) +8mV to +110mV, 1mV step Accuracy *1 (0.140A to 1.95A) ・ Discharging overcurrent release voltage Selection from ・ Charging overcurrent detection voltage -100mV to -8mV, 1mV step (Charging overcurrent detection current) Accuracy *1 (-0.140A to -1.75A) ・ Short detection voltage *1 VDD-0.7V , 1.6V , Vdet3 0.040V to 0.700V, 5mV step Accuracy ±20 to 50mV ±Accuracy[mV] 6.0 5.0 4.0 3.0 2.0 0 10 20 30 40 50 60 70 80 90 100 110 |Vdet3,Vdet4|[mV] These range and accuracy are the one of the standard setting. It may differ each product. Please refer to an individual specificationsabout detail parameters. ■ All brand names, logos, product names, trade names and service names described here are trademarks or registered trademarks o f their respective companies or organizations. ■ Any products mentioned in this leaflet are subject to any modification in their appearance and others for improvements withou t prior notification. ■ The details listed here are not a guarantee of the individual products at the time of ordering. When using the products, you will be asked to check their specifications. Oct, 2020 Rev.0 ■ The details listed here are not a guarantee of the individual products at the time of ordering. When using the products, you will be asked to check their specifications. (2) Range of detection delay time ・ Overcharge detection delay time 1.0s fixed ・ Overdischarge detection delay time Selection from 20ms, 96ms, 144ms ・ Discharging overcurrent detection delay time Selection from 6ms, 8ms, 12ms, 16ms, 20ms, 32ms, 128ms, 256ms, 512ms ・ Charging overcurrent detection delay time Selection from 8ms, 16ms, 32ms ・ Short detection delay time 150us to 550us, 50us step (3) 0V battery charge function Selection from "Inhibition" or "Permission" *2 (4) Low current consumption ・ Normal mode Typ. 1.0μA, Max. 1.4μA ・ Stand-by mode Max. 0.025μA (In case Overdischarge latch function "Enable") Max. 0.550μA (In case Overdischarge latch function "Disable") (5) MOS-FET ・ Source to Source on state resistance Typ. 56.5mΩ (@VDD=3.5V) (6) Absolute maximum ratings ・ VDD pin -0.3V to +12V ・ V- pin VDD-24V to VDD+0.3V ・ Drain-source voltage Max. 24V ・ Source current 2.0A ・ Total Power Dssipation 0.3W ・ Storage temperature -55 to +125℃ ・ Operation temperature -40 to +85℃ Package type ・ PLP-6J 1.40 × 2.00 × 0.50max [mm] Oct, 2020 Rev.0 Pin configuration Package Pin No. Symbol PLP-6J TOP View 6 5 4 D 1 2 3 1.40 × 2.00mm typ. , t=0.50mm max. Function 1 S1 2 VSS Negative power supply voltage input terminal 3 VDD Positive power supply voltage input terminal 4 NC No connection 5 VM Charger negative voltage input terminal 6 S2 Source tarminal of charge FET - D Drain terminal of discharge FET and charge FET Source terminal of discharge FET Package dimension UNIT: mm Top View Side View Bottom Oct, 2020 Rev.0 Recommend operation conditions ITEM SYMBOL MIN. MAX. UNIT Operating Ambient temperature Topr Operating voltage Vop -40 85 ℃ 1.5 5.5 V Electrical characteristics (Main item) Ta=25℃ ITEM SYMBOL Discharge overcurrent release resistance Rshort VM terminal pull-up resistances Rpu Current consumption Idd Current consumption at stand-by Istb CONDITION MIN. TYP. MAX. UNIT 10.0 20.0 40.0 kΩ VDD=2.0V, VM=0V 150 300 600 kΩ VDD=4.0V, VM=0V #REF! 1.0 1.4 uA VDD=2.0V, VM=VDD, *4 - - 0.025 VDD=1.5V, VM=VDD, *5 - - 0.550 VDD=3.6V, VM=3.6V uA Ta=25℃ ITEM SYMBOL Overcharge detection voltage Vdet1 Overcharge release voltage Vrel1 Overdischarge detection voltage Vdet2 Overdischarge release voltage1 Vrel2 Discharging overcurrent detection voltage Vdet3 Discharging overcurrent release voltage CONDITION MIN. TYP. MAX. UNIT Vdet1-0.02 Vdet1 Vdet1+0.02 V Vdet1=Vrel1 Vrel1-0.03 Vdet1≠Vrel1 Vrel1-0.03 Vdet2-0.03 Vrel1 Vdet2 Vrel1+0.02 Vrel1+0.03 Vdet2+0.03 Vdet2=Vrel2 Vrel2-0.03 Vdet2≠Vrel2 Vrel2-0.09 *6 Vdet3-3.00 Vdet3 Vdet3+3.0 VDD-1.0 VDD-0.7 VDD-0.4 *6 1.60 *6 *6 Vdet3 *6 Vrel3 *6 Vrel2+0.09 V V mV V Vdet4-3.00 Vdet4 Vdet4+3.00 mV Vshort-0.02 Vshort Vshort+0.02 V 0.60 0.90 1.20 V tVdet1*0.8 tVdet1 tVdet1*1.2 s tVrel1 tVrel1*1.2 ms tVdet2 tVdet2*1.2 ms tVrel2 tVrel2*1.2 ms tVdet3 tVdet3*1.2 ms tVrel3 tVrel3*1.2 ms tVdet4 tVdet4*1.2 ms tVrel4 tVrel4*1.2 ms tshort tshort*1.3 us Charging overcurrent detection voltage Vdet4 Short detection voltage Vshort 0V battery charge inhibition battery voltage Vst Overcharge detection delay time tVdet1 *6 Overcharge release delay time tVrel1 *6 tVrel1*0.8 Overdischarge detection delay time tVdet2 *6 tVdet2*0.8 Overdischarge release delay time tVrel2 *6 tVrel2*0.8 Discharging overcurrent detection delay time tVdet3 *6 tVdet3*0.8 Discharging overcurrent release delay time tVrel3 *6 tVrel3*0.8 Charging overcurrent detection delay time tVdet4 *6 tVdet4*0.8 Charging overcurrent release delay time tVrel4 *6 tVrel4*0.8 Short detection delay time tshort *6 tshort*0.7 When "Inhibition" is selected Vrel2 Vrel2+0.04 V Oct, 2020 Rev.0 Ta=25℃ ITEM SYMBOL Drain current of cut off IDSS Source to source on state resistance Body diode forward voltage MIN. TYP. MAX. VDS=24V - - 1.0 uA RSS(on)45 VDD=4.5V , Is=1.0A 46.0 52.5 61.0 mΩ RSS(on)42 VDD=4.2V , Is=1.0A 46.0 53.0 62.0 mΩ RSS(on)39 VDD=3.9V , Is=1.0A 47.0 54.5 64.0 mΩ RSS(on)37 VDD=3.7V , Is=1.0A 47.5 55.5 65.0 mΩ RSS(on)35 VDD=3.5V , Is=1.0A 48.0 56.5 67.0 mΩ RSS(on)33 VDD=3.3V , Is=1.0A 48.5 58.0 69.0 mΩ RSS(on)30 VDD=3.0V , Is=1.0A 49.5 60.5 73.5 mΩ RSS(on)25 VDD=2.5V , Is=1.0A 50.0 68.0 87.0 mΩ 0.55 0.70 0.85 V VF CONDITION Is=1A UNIT *4 In case Overdischarge latch function "Enable" *5 In case Overdischarge latch function "Disable" *6 These range and accuracy are the one of the standard setting. It may differ each product. Please refer to an individual specifications about detail parameters. Oct, 2020 Rev.0 Typical applicaton circuit B+ P+ R1 VDD Over charge Oscil lator Logic Ci rcui t 0V c ell Ch ar ge C3 Cell Ch ar ging Over c urrent C1 VS S Over d isc harge Dis chargi ng Over c urrent VM Rp u Rs hort R2 Short c urrent DOUT CO UT S2 S1 B- PC2 Max. D Symbol Parts Min. Typ. Purpose R1 Resistor - 100Ω 1.0kΩ For voltage fluctuation, For ESD C1 Capacitor 0.01uF 0.1uF 1.0uF R2 Resistor - 1.0kΩ - Current limit for charger reverse connection C2 Capacitor - 0.1uF - For exogenous noise C3 Capacitor - 0.1uF - For exogenous noise For voltage fluctuation Application hints The resistors that are inserted into each pin are to protect the IC. They help to remove ESD and latch-up damages. The capacitors help to reduce the effects of transient variations in voltage and electromagnetic waves,and to improve ESD tolerance of the IC. Please use either C2 or C3, or both of them by request of your application. These values in the above figure are for example. Please choose appropriate values. Oct, 2020 Rev.0 Product lineup Oct, 2020 Rev.0