MMBT4401

MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=40V. Ÿ Collector current IC=0.6A. Ÿ Transition frequency f T >250MHz @ IC=20mAdc, VCE=20Vdc, f=100MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2X 3 C 2X 1 2 B MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage 60 Collector-Emitter Voltage 40 Emitter-Base Voltage 6 Collector Current 0.6 Total Device Dissipation 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E MMBT4401 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Collector-Base breakdown voltage IC=100uA,IE=0 60 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=100uA,IC=0 6 V Collector cut-off current ICBO VCB=50V,IC=0 Collector cut-off current ICEX Base cut-off current IBEX Emitter cut-off current IEBO VEB=5V,IC=0 HFE IC=1mA,VCE=1V 10 HFE IC=0.1mA,VCE=1V 40 HFE IC=150mA,VCE=1V 100 HFE IC=500mA,VCE=1V 40 HFE IC=200mA,VCE=1V 30 DC current gain* V(BR)CBO Collector-Emitter saturation voltage VCE(SAT) VCE=30V,IB=0 0.1 uA 0.1 uA 0.1 uA 0.1 uA 300 IC=100mA,IB=10mA 0.2 V IC=500mA,IB=50mA 1 V IC=100mA,IB=10mA 1.1 V IC=500mA,IB=50mA 2 V Base-Emitter Saturation voltage* VBE(SAT) Input capacitance CIB VCB=6V,IE=0,f=1MHZ 4.0 pF Output capacitance COB 8.0 pF Transition ferquency fT Delay time td Rise time tr VEB=0.5V,IC=0,f=1MHZ IC=20mA,VCE=20V, f=100MHZ VCC=30V,VBE=-0.5V, IC=150mA,IB=15mA Storage time ts Fall time tf VCC=30V,VBE=-0.5V, IB1=IB2=15mA 250 MHZ 35 nS 35 nS 200 nS 50 nS *Pulse Test: Pulse Width