SS24F

山东晶导微电子有限公司 SS22F THRU SS220F Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A PINNING PIN Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS22 — SS220 Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 27mg / 0.00095oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS22F SS24F SS26F SS28F SS210F SS212F SS215F SS220F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 2.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 50 A Max Instantaneous Forward Voltage at 2 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.85 0.95 0.3 3 0.5 5 IR Cj 0.70 160 80 V mA pF RθJA 80 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-S-SS22F~SS220F-2A200V Page 1 of 3 山东晶导微电子有限公司 SS22F THRU SS220F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =75°C 10 2 SS22F/SS24F SS26F-SS220F 10 1 T J =25°C 10 0 0 Case Temperature (°C) 80 100 500 Junction Capacitance ( pF) 20 10 1.0 SS22F/SS24F SS26F/SS28F SS210F/SS212F SS215F/SS220F 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS22F/SS24F 20 SS26F-SS220F 10 1.8 0.1 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Transient Thermal Impedance（ °C /W） 60 10 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 60 Fig.4 Typical Junction Capacitance Instaneous Forward Voltage (V) Fig.6- Typical Transient Thermal Impedance 100 Number of Cycles at 60Hz 2016.01 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) T J =100°C 10 3 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS22F THRU SS220F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.01 ∠ XTH601154A0 Marking code SS22F SS22 SS24F SS24 SS26F SS26 SS28F SS28 SS210F SS210 SS212F SS212 SS215F SS215 SS220F SS220 Page 3 of 3