M1

山东晶导微电子有限公司 M1 THRU M7 Jingdao Microelectronics Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: M1~M7 Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols M1 M2 M3 M4 M5 M6 M7 Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA 75 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. 2015.11 SMA-A-M1~M7-1A1KV Page 1 of 3 山东晶导微电子有限公司 M1 THRU M7 Jingdao Microelectronics Fig.2 Typical Instaneous Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current ( μ A) Fig.1 Forward Current Derating Curve 100 T J =150°C 10 T J =125°C T J =100°C 1.0 T J =75°C 0.1 T J =25°C 0.01 0 Junction Capacitance ( pF) TJ = 2 5° C 00 =1 TJ =1 25 °C °C 0.5 TJ Instaneous Forward Current (A) 1.0 0.8 0.9 600 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 400 200 Instaneous Reverse Voltage (V) Case Temperature (°C) 100 T J =25°C 10 1 0.7 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2015.11 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 M1 THRU M7 Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number 2.4 (94) mm Unit ： (mil) 2015.11 M1 M1 M2 M2 M3 M3 M4 M4 M5 M5 M6 M6 M7 M7 1.8 (71) 1.8 (71) 1.8 (71) JD511214B6 Marking code Page 3 of 3