BZT52C30S

山东晶导微电子有限公司 BZT52C2V4S~BZT52C43S Jingdao Microelectronics Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.4V to 43V. • Ideally suited for automated assembly processes DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA ▪Case: SOD-323 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz 1 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Value Unit Power Dissipation (NOTE 1) PD 200 mW Forward Voltage at I F = 10 mA(NOTE 2) VF 0.9 V RθJA 625 °C/W T j , T stg -55 ~ +150 °C Typical thermal resistance juncting to ambient Operating and Storage Temperature Range Fig.1 Power Derating Curve Power Dissipation P D ( W ) 250 200 150 100 50 0 25 50 75 100 125 150 T a ,Case Temperature (°C) 2017.04 175 Transient Thermal Impedance（ °C /W） Symbol Parameter Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD323-W-BZT52C2V4S~BAT52C43S-200mW Page 1 of 3 山东晶导微电子有限公司 BZT52C2V4S~BZT52C43S Jingdao Microelectronics Characteristics at Ta = 25°C (NOTE 2) Type Marking (NOTE 3) V ZT（@ I ZT） Min（V） Maximum Reverse Current Maximum Zener Impedance Zener Voltage Range (NOTE 2) Typical Temperature Coefficient @I ZTC mV/℃ Test Current I ZTC I ZT Z ZT（@ I ZT） Z ZK（@ I ZK） I ZK IR VR (Ω) mA μA V MIN MAX mA Nom（V） Max（V） (mA) BZT52C2V4S WX 2.2 2.4 2.6 5 100 600 1 50 1 -3.5 0 5 BZT52C2V7S W1 2.5 2.7 2.9 5 100 600 1 20 1 -3.5 0 5 BZT52C3V0S W2 2.8 3 3.2 5 95 600 1 10 1 -3.5 0 5 BZT52C3V3S W3 3.1 3.3 3.5 5 95 600 1 5 1 -3.5 0 5 BZT52C3V6S W4 3.4 3.6 3.8 5 90 600 1 5 1 -3.5 0 5 BZT52C3V9S W5 3.7 3.9 4.1 5 90 600 1 3 1 -3.5 0 5 BZT52C4V3S W6 4 4.3 4.6 5 90 600 1 3 1 -3.5 0 5 BZT52C4V7S W7 4.4 4.7 5 5 80 500 1 3 2 -3.5 0.2 5 BZT52C5V1S W8 4.8 5.1 5.4 5 60 480 1 2 2 -2.7 1.2 5 BZT52C5V6S W9 5.2 5.6 6 5 40 400 1 1 2 -2 2.5 5 BZT52C6V2S WA 5.8 6.2 6.6 5 10 150 1 3 4 0.4 3.7 5 BZT52C6V8S WB 6.4 6.8 7.2 5 15 80 1 2 4 1.2 4.5 5 BZT52C7V5S WC 7 7.5 7.9 5 15 80 1 1 5 2.5 5.3 5 BZT52C8V2S WD 7.7 8.2 8.7 5 15 80 1 0.7 5 3.2 6.2 5 BZT52C9V1S WE 8.5 9.1 9.6 5 15 100 1 0.5 6 3.8 7 5 BZT52C10S WF 9.4 10 10.6 5 20 150 1 0.2 7 4.5 8 5 BZT52C11S WG 10.4 11 11.6 5 20 150 1 0.1 8 5.4 9 5 BZT52C12S WH 11.4 12 12.7 5 25 150 1 0.1 8 6 10 5 BZT52C13S WI 12.4 13 14.1 5 30 170 1 0.1 8 7 11 5 BZT52C15S WJ 13.8 15 15.6 5 30 200 1 0.1 10.5 9.2 13 5 BZT52C16S WK 15.3 16 17.1 5 40 200 1 0.1 11.2 10.4 14 5 BZT52C18S WL 16.8 18 19.1 5 45 225 1 0.1 12.6 12.4 16 5 BZT52C20S WM 18.8 20 21.2 5 55 225 1 0.1 14.4 18 5 20.8 22 23.3 5 55 250 1 0.1 15.4 16.4 20 5 250 14 BZT52C22S WN BZT52C24S WO 22.8 24 25.6 5 70 1 0.1 16.8 18.4 22 5 BZT52C27S WP 25.1 27 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 28 30 32 2 80 300 0.5 0.1 24.4 29.4 2 BZT52C33S WR 31 33 35 2 80 325 0.5 0.1 23.1 27.4 33.4 2 21 BZT52C36S WS 34 36 38 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 37 39 41 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43S WU 40 43 46 2 100 700 1 10 12 5 NOTE: 0.1 32 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. 2017.04 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 BZT52C2V4S~BZT52C43S Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2017.04 70717 Page 3 of 3