ESD9N5BU-2/TR

ESD9N5BU ESD9N5BU http//:www.sh-willsemi.com 1-Line, Bi-directional, Ultra-low Capacitance, Transient Voltage Suppressor Descriptions The ESD9N5BU is a transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). It is designed to replace DFN1006-2L (Bottom View) multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESD9N5BU was past ESD transient voltage up to ±12KV (contact) according to IEC61000-4-2 and Pin2 Pin1 withstand peak current up to 3A for 8/20μs pulse according to IEC61000-4-5. The ESD9N5BU is available in DFN1006 package. Standard products are Pb-free and Halogen-free. Circuit Diagram Features  Reverse stand-off voltage: ±5.0V max.  Transient protection for each line according to IEC61000-4-2 (ESD) : ±12kV (contact discharge) IEC61000-4-4 (EFT) :40A (5/50ns) : ±15kV (air discharge) IEC61000-4-5 (surge) :3A (8/20μs)  Ultra-low capacitance  Low clamping voltage  Low leakage current  Small package  Mobile phone PAD  Notebook  STB  LCD TV  Digital camera  Other electronics equipments Will Semiconductor Ltd. * = Month (A~Z) U = Device code Pin2 Marking (Top View) Order information Applications  *U Pin1 1 Device Package Shipping ESD9N5BU-2/TR DFN1006-2L 10000/Tape&Reel Revision 2.2, 2014/10/14 ESD9N5BU Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20μs) Ppk 54 W Peak pulse current (tp=8/20μs) Ipp 3 A ESD voltage IEC61000-4-2 air ±15 VESD ESD voltage IEC61000-4-2 contact Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature KV ±12 Tsg 125 o -40~85 o 260 o -55~150 o C C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reveres leakage current IR Reveres breakdown voltage Clamping voltage 1) Dynamic resistance 1) Condition Min. Typ. VRWM = 5V VBR IT = 1mA 7.0 VCL IPP = 16A, tp = 100ns RDYN 8.5 Max. Unit ±5.0 V 1.0 μA 10.0 V 35 V 1.61 Ω Clamping voltage 2) VCL VESD = 6kV 27 V Clamping voltage 2) VCL VESD = 8kV 35 V Clamping voltage 3) VC Junction capacitance CJ Ipp=1A tp=8/20us 11.8 14 V Ipp=3A tp=8/20us 16 18 V F=1MHz, VR=0V 0.45 0.7 pF Notes: 1) TLP parameter: Z0 = 50Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 2.2, 2014/10/14 ESD9N5BU o 100 90 Front time: T1= 1.25 × T = 8µs Time to half-value: T2= 20µs 100 90 Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 T T1 tr = 0.7~1ns Time (µs) 20 0.6 C - Junction capacitance (pF) Pulse waveform: tp=8/20us VC - Clamping voltage (V) Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 16 12 8 4 t 60ns 30ns 20 0 1 2 3 Ipp - Peak pulse current (A) Fsignal=1MHz 0.5 Vsignal=50mVrms 0.4 0.3 0.2 4 0 Clamping voltage vs. Peak pulse current 1 2 3 4 VR - Reverse voltage (V) 5 Capacitance vs. Reverse voltage 1000 % of Rated power Peak Pulse Power (W) 100 100 10 80 60 40 20 1 0 1 10 100 Pulse Duration(us) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 2.2, 2014/10/14 ESD9N5BU o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (-8kV contact discharge per IEC61000-4-2) (+8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 15 10 5 0 -5 Z0 = 50 Ω tr = 2ns tp = 100ns -10 -15 -20 -40 -30 -20 -10 0 10 20 TLP voltage (V) 30 40 TLP Measurement Will Semiconductor Ltd. 4 Revision 2.2, 2014/10/14 ESD9N5BU Package outline dimensions DFN1006-2L Top View Bottom View Side View Min. Typ. Max. A 0.30 - 0.50 A1 0.00 - 0.05 A3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e 0.65 Typ. Recommend land pattern (Unit: mm) Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 5 Revision 2.2, 2014/10/14