ESD9N12BA-2/TR

ESD9N12BA ESD9N12BA 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ES9DN12BA is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and lightning. DFN1006-2L (Bottom View) The ESD9N12BA may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 5.5A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD9N12BA is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Stand-off voltage: ±12V Max.  Transient protection for each line according to Pin1 IEC61000-4-2 (ESD): ±30kV (contact discharge) *A Pin2 IEC61000-4-5 (surge): 5.5A (8/20μs)  Capacitance: CJ = 27pF typ.  Ultra-low leakage current: IR = 0.1nA typ.  Low clamping voltage: VCL = 20V typ. @ IPP = 16A (TLP)  Solid-state silicon technology A = Device code * = Month code ( A~Z) Marking (Top View) Applications  Computers and peripherals  Cellular handsets  Portable Electronics  Notebooks Will Semiconductor Ltd. Order information Device Package Shipping ESD9N12BA-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.5, 2018/04/23 ESD9N12BA Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 99 W Peak pulse current (tp = 8/20μs) IPP 5.5 A ESD according to IEC61000-4-2 air discharge ±30 VESD kV ESD according to IEC61000-4-2 contact discharge ±30 TJ 125 o Operating temperature TOP -40~85 o Lead temperature TL 260 o TSTG -55~150 o Junction temperature Storage temperature C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Stand-off voltage Reverse breakdown voltage 1) Dynamic resistance Clamping voltage Condition Min. Typ. VRWM Reverse leakage current Clamping voltage Symbol 1) 2) Junction capacitance IR VRWM = 12V VBR IT = 1mA VCL IPP = 16A, tp = 100ns RDYN VCL 0.1 13 Max. Unit ±12 V 50 nA 16.5 V 20 V 0.35 Ω IPP = 1A, tp = 8/20μs 16 V IPP = 5.5A, tp = 8/20μs 18 V VR = 0V, f = 1MHz 27 35 pF VR = 12V, f = 1MHz 14 20 pF CJ 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 1.5, 2018/04/23 ESD9N12BA o 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 tr = 0.7~1ns Time (s) T1 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 28 Pulse waveform: tp = 8/20s 19 18 17 16 15 14 13 0 1 2 3 4 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 20 t 60ns 30ns 20 T 5 6 f = 1MHz VAC = 50mV 26 24 22 20 18 16 14 12 7 0 2 IPP - Peak pulse current (A) 4 6 8 10 12 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 10 1 10 100 Pulse time (s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 Power derating vs. Ambient temperature 3 Revision 1.5, 2018/04/23 ESD9N12BA o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) TLP current (A) 20 18 Z0 = 50 16 tr = 2ns 14 tp = 100ns 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.5, 2018/04/23 ESD9N12BA PACKAGE OUTLINE DIMENSIONS DFN1006-2L    b L E (Ⅰ) (Ⅱ) (Ⅲ) D e Top View Bottom View (Ⅰ) A3 A1 A (Ⅱ) Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.34 0.45 0.53 A1 0.00 0.02 0.05 A3 0.12 Ref. D 0.95 1.00 1.08 E 0.55 0.60 0.68 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e 0.65 BSC Recommended land pattern (Unit: mm) 0.55 0.60 0.30 Notes: 0.85 This recommended land pattern is for reference purposes only. Please consult your manufacturing 1.40 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 5 Revision 1.5, 2018/04/23 ESD9N12BA TAPE AND REEL INFORMATION RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.5, 2018/04/23