ESD9B5VL-2/TR

ESD9B5VL ESD9B5VL 1-Line, Bi-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD9B5VL is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) FBP-02C (Bottom View) and Lightning. The ESD9B5VL may be used to provide ESD protection up to ±20kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 3A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD9B5VL is available in FBP-02C package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±5V Max  Transient protection for each line according to *.B Pin1 Pin2 IEC61000-4-2 (ESD): ±20kV (contact and air discharge) IEC61000-4-4 (EFT): 20A (5/50ns) IEC61000-4-5 (surge): 3A (8/20μs) * = Month code (A~Z)  Capacitance: CJ = 5.0pF typ.  Low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 13V typ. @ IPP = 16A (TLP)  Solid-state silicon technology .B =Device Code Marking (Top View) Order information Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. 1 Device Package Shipping ESD9B5VL-2/TR FBP-02C 10000/Tape&Reel Revision 1.5, 2016/03/08 ESD9B5VL Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 33 W Peak pulse current (tp = 8/20μs) IPP 3 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±20 kV ±20 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2016/03/08 ESD9B5VL o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Condition Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA Reverse breakdown voltage Min. Typ.