ESD5411N-2/TR

ESD5411N ESD5411N 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5411N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) DFN1006-2L (Bottom View) and Lightning. The ESD5411N may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 6A (8/20μs) according to IEC61000-4-5. The ESD5411N is available in DFN1006-2L package. Pin1 Pin2 Standard products are Pb-free and Halogen-free. Features Pin configuration  Stand-off voltage: 7V Max.  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact discharge) Pin1 IEC61000-4-5 (surge): 6 A (8/20μs) G*  Capacitance: CJ = 17.5pF typ.  Ultra-low leakage current: IR < 5nA typ.  Low clamping voltage: VCL = 12V typ. @ IPP = 16A (TLP) G = Device code  Solid-state silicon technology * = Month code (A~Z) Pin2 Marking (Top View) Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. Order information Device Package Shipping ESD5411N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.1, 2018/04/23 ESD5411N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 70 W Peak pulse current (tp = 8/20μs) IPP 6 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.1, 2018/04/23 ESD5411N o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current IR Reverse breakdown voltage Reverse holding voltage Clamping voltage VBR VHOLD 1) Dynamic resistance VCL 1) 2) VCL Clamping voltage 3) VCL Min. VRWM = 7V Typ.