ESD5311N-2/TR

ESD5311N ESD5311N http//:www.willsemi.com 1-Line, Bi-directional, Ultra-low Capacitance Transient Voltage Suppressors Descriptions The ESD5311N is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data DFN1006-2L (Bottom View) and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD5311N incorporates one pair of ultra- low capacitance steering diodes plus a TVS diode. The ESD5311N may be used to provide ESD protection up to ±20kV (contact discharge) according to IEC61000-4-2, and Pin2 Pin1 withstand peak pulse current up to 4A (8/20μs) according to IEC61000-4-5. The ESD5311N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Pin configuration Features  Stand-off voltage: 5V Max  Transient protection for each line according to Pin1 8* Pin2 IEC61000-4-2 (ESD): ±20kV (contact discharge) IEC61000-4-5 (surge): 4 A (8/20μs) 8 = Device code  Ultra-low capacitance: CJ = 0.25pF typ. * = Month code ( A~Z)  Ultra-low leakage current: IR < 1nA typ. Marking (Top View)  Low clamping voltage: VCL = 21V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Order information Applications Device  USB 2.0 and USB 3.0  HDMI 1.3 and HDMI 1.4  SATA and eSATA  DVI  IEEE 1394  PCI Express  Portable Electronics  Notebooks Will Semiconductor Ltd. Package Shipping ESD5311N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.3, 2015/10/28 ESD5311N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 84 W Peak pulse current (tp = 8/20μs) IPP 4 A ESD according to IEC61000-4-2 air discharge ±20 VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature TJ Lead temperature TL Storage temperature kV ±20 TSTG 125 o 260 o -55~150 o C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current IR Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) IT = 1mA VCL IPP = 16A, tp = 100ns RDYN 2) VCL Clamping voltage 3) VCL CJ Min. VRWM = 5V VBR Clamping voltage Junction capacitance Condition VESD = 8kV 7.5 Typ. Max. Unit 5.0 V