SL2302S

SL2302 N-Channel Power MOSFET D General Features G ● VDS = 20V,ID =2.6A RDS(ON) < 120mΩ@ VGS=2.5V RDS(ON) < 85mΩ @ VGS=4.5V S ● High power and current handing capability Schematic diagram ● Lead free product is acquired ● Surface mount package 3 D Application ● Battery protection G 1 2 S ● Load switch Marking and pin assignment ● Power management SOT-23 top view MAXIMUM RATINGS Characteristic Symbol Max Drain-Source Voltage BVDSS 20 V Gate- Source Voltage VGS +8 V Drain Current (continuous) ID 2.6 A Drain Current (pulsed) IDM 10 A PD 900 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Total Device Dissipation TA=25℃ www.slkormicro.com 1 Unit SL2302 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) BVDSS 20 — — V Gate Threshold Voltage (ID = 250uA,VGS= VDS) VGS(th) 0.4 — 1.5 V Drain-Source On Voltage (ID= 50mA,VGS= 5V) (ID = 500mA,VGS= 10V) VDS(ON) — — 0.375 3.75 V Diode Forward Voltage Drop (IS= 0.75A,VGS=0V) VSD — — 1.2 V Zero Gate Voltage Drain Current (VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) IDSS — — 1 10 uA Gate Body Leakage (VGS=+8V, VDS=0V) IGSS — — +100 nA RDS(ON) — — 85 120 mΩ CISS — — 880 pF COSS — — 270 pF Turn-ON Time (VDS= 6V, ID= 1A, RGEN=6Ω) t(on) — — 20 ns Turn-OFF Time (VDS= 6V, ID= 1A, RGEN=6Ω) t(off) — — 65 ns Static Drain-Source On-State Resistance (ID=2.6A,VGS=4.5V) (ID=2A,VGS=2.5V) Input Capacitance (VGS=0V, VDS= 6V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS= 6V,f=1MHz) Pulse Width