SL2301S

SL2301 P-Channel Power MOSFET D General Features G ● VDS = -20V,ID = -2.4A RDS(ON) < 200mΩ@ VGS=-2.5V RDS(ON) < 140mΩ@ VGS=-4.5V S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications Marking and Pin Assignment ● Load switch ● Power management SOT-23 top view MAXIMUM RATINGS Characteristic Symbol Max Unit BVDSS -20 V VGS +8 V ID -2.4 A IDM -10 A TA=25℃ PD 900 mW Junction TJ 150 ℃ Storage Temperature Tstg -55to+150 ℃ Drain-Source Voltage Gate- Source Voltage Drain Current (continuous) Drain Current (pulsed) Total Device Dissipation www.slkormicro.com 1 SL2301 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) BVDSS -20 — — V Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) -0.4 — -1.5 V Diode Forward Voltage Drop (IS= -0.75A,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current (VGS=0V, VDS= -16V, TA=55℃) IDSS — — -1 -10 uA Gate Body Leakage (VGS=+8V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance (ID= -2.4A,VGS= -4.5V) RDS(ON) — — 140 mΩ Static Drain-Source On-State Resistance (ID= -2A,VGS= -2.5V) RDS(ON) — — 200 mΩ Input Capacitance (VGS=0V, VDS= -10V,f=1MHz) CISS — 600 — pF Output Capacitance (VGS=0V, VDS= -10V,f=1MHz) COSS — 120 — pF Turn-ON Time (VDS= -10V, ID= -2.4A, RGEN=6Ω) t(on) — 8 — ns Turn-OFF Time (VDS= -10V, ID= -2.4A, RGEN=6Ω) t(off) — 60 — ns Pulse Width