SS510B

SS52B-SS510B SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 5.0 A Features ! Schottky Barrier Chip ! ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak For Use in Low Voltage Application Guard Ring Die Construction B SMB(DO-214AA)




















































































Mechanical Data ! ! ! ! ! A Case: SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.093 grams (approx.) C D J G E H Maximum Ratings and Electrical Characteristics Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.21 D 0.15 0.31 E 5.00 5.59 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SS52B SS53B SS54B SS55B SS56B SS58B SS510B Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A TA=25 C Maximum DC reverse current at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range VRRM VRMS VDC 40 28 40 30 21 30 50 35 50 60 42 60 100 70 100 80 56 80 V V V I(AV) 5.0 A IFSM 120.0 A VF IR CJ RθJA TJ , TSTG Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.slkormicro.com 20 14 20 Unit 1 0.70 0.55 0.85 0.5 20 10 200 50.0 -65 to +125 -65 to +150 -65 to +150 V mA pF C/W C C FIG. 1- FORWARD CURRENT DERATING CURVE 5.0 4.0 Single Phase Half Wave 60Hz Resistive or inductive Load 3.0 2.0 SS52 -SS56 SS58 -SS510 1.0 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES SS52B-SS510B FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 50 INSTANTANEOUS FORWARD CURRENT,AMPERES TJ=25 C 10.0 1 0.1 SS52 -SS54 SS55 -SS56 SS58 -SS510 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 TJ=25 C 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 TJ=25 C 100 10 0.1 1.0 10 20 40 60 80 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 REVERSE VOLTAGE,VOLTS www.slkormicro.com 0 PERCENT OF PEAK REVERSE VOLTAGE,% 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 1000 100 t,PULSE DURATION,sec. 2 100