WSE9968A

WSE9968 N-Ch MOSFET General Description Product Summery The WSE9968 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 100V 80mΩ 4.2A Applications The WSE9968 meet the RoHS and Green Pro duct requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-89 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 4.2 A 1 3.4 A 16 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 12 mJ IAS Avalanche Current 7.0 A 3 PD@TA=25℃ Total Power Dissipation 3.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 85 ℃/W --- 35 ℃/W Rev 1: May.2019 WSE9968 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V --- 0.098 --- V/℃ --- 80 100 mΩ --- 85 130 mΩ 1.0 1.5 3.0 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=4A VGS=4.5V , ID=3.5A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 4 Ω Qg Total Gate Charge (10V) --- 16 22 Qgs Gate-Source Charge --- 2.5 4.2 Qgd Gate-Drain Charge --- 3 4.5 VDS=80V , VGS=10V , ID=4A uA nC --- 11 20 Rise Time VDD=50V , VGS=10V , RG=6Ω --- 6 11 Turn-Off Delay Time ID=1A ,RL=30Ω. --- 27 49 Fall Time --- 5 10 Ciss Input Capacitance --- 740 960 Coss Output Capacitance --- 45 --- Crss Reverse Transfer Capacitance --- 24 --- Min. Typ. Max. Unit 12 --- --- mJ Min. Typ. Max. Unit --- --- 3.0 A A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=4A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=3A,dI/dt=100A/µs , TJ=25℃ --- --- 16 --- --- 1.2 V --- 27 --- nS --- 36 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=4A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WSE9968 N-Ch MOSFET Typical Characteristics 96 15 ID=4A VGS=10V VGS=7V 94 VGS=5V VGS=4.5V RDSON (mΩ) ID Drain Current (A) 12 9 92 VGS=3V 6 90 3 88 0 0 0.5 1 1.5 2 4 2.5 6 VDS , Drain-to-Source Voltage (V) VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 10 ID=4A IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 -50 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized RDSON vs. TJ Page 3 Rev 1: May.2019 WSE9968 N-Ch MOSFET 1500 10.00 F=1.0MHz 100us 1ms 300 1.00 10ms ID (A) Capacitance (pF) Ciss 100 o TA=25 C Single Pulse Crss 10 1 5 9 13 17 21 100ms 0.10 Coss 25 VDS , Drain to Source Voltage (V) 0.01 0.01 0.1 Fig.7 Capacitance DC 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.