WSD30L20DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID -30 18mΩ -20A provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast charging DFN3X3-8-EP Pin Configuration Features 1,High density cell design for ultra low Rdson 2,Fully characterized avalanche voltage and current 3,Good stability and uniformity with high EAS 4,Excellent package for good heat dissipation Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ RθJA Drain-Source Voltage Gate-Source Voltage Rating Units -30 V ±20 V Continuous Drain Current, VGS @ -10V1 TC=25℃ -20 A Continuous Drain Current, VGS @ -10V1 TC=100℃ -13 A -80 A 16 mJ -17 A Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TC=25℃ 16.6 W Total Power Dissipation4 TA=25℃ 1.67 W -55 to 150 ℃ -55 to 150 ℃ 7.53 ℃/W Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 www.winsok.tw Page 1 Rev1.Apr.2020 WSD30L20DN P-Ch MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 32 --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-10A --- 18.8 25 VGS=-4.5V , ID=-5A --- 30.5 40 -1.2 -1.7 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 8.9 --- Ω Qg Total Gate Charge (-4.5V) --- 19 --- --- 6.3 --- BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Conditions Static Drain-Source On-Resistance mΩ Gate Threshold Voltage VGS=VDS , ID =-250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS uA VDS=-15V , VGS=-4.5V , ID=15A nC Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.5 --- Turn-On Delay Time --- 6 --- --- 5 --- --- 25 --- Fall Time --- 7 --- Ciss Input Capacitance --- 900 --- Coss Output Capacitance --- 140 --- Crss Reverse Transfer Capacitance --- 120 --- --- --- -20 A --- --- -80 A Td(on) Tr Td(off) Tf IS Rise Time Turn-Off Delay Time VDD=-15V, VGS=-10V , RG=3.3Ω, ID=-15A VDS=-15V , VGS=0V , f=1MHz Continuous Source Current ns pF VG=VD=0V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time --- 7 --- nS Qrr Reverse Recovery Charge IF=-15A , dI/dt=100A/µs , TJ=25℃ --- 6.3 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-24V,VGS=-10V,L=0.1mH,IAS=-17A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.Apr.2020 WSD30L20DN P-Ch MOSFET Typical Characteristics 49 12 ID=-10A VGS=-10V VGS=-7V 39 8 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-5V 6 VGS=-4.5V VGS=-3V 4 29 2 0 19 0 0.5 1 1.5 -VDS Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 Voltage 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 TJ=150℃ 6 TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics of Reverse 10 15 20 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 5 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 -50 Fig.5 Normalized VGS(th) v.s TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Page 3 Rev1.Apr.2020 WSD30L20DN P-Ch MOSFET 10000 100.00 F=1.0MHz 100us 1ms Capacitance (pF) 10.00 Ciss 1000 -ID (A) 10ms 100ms DC 1.00 Coss 100 Crss 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev1.Apr.2020 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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