B5819WS

B5817W-B5819W Schottky Barrier Diode FEATURES z z Extremely low VF. Low stored change,majority carrier conduction. z Low power loss/high efficient APPLICATIONS z z For Use In Low Voltage, High Frequency Inverters. Free Wheeling, And Polarity Protection Applications. SOD-123FL MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage VRSM 24 36 48 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 25 A Power Dissipation Pd 250 mW Thermal Resistance Junction to Ambient RθJA 80 ℃/W Storage temperature TJ,TSTG -65~+125 ℃ www.slkormicro.com 1 B5817W-B5819W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition MIN MAX UNIT IR=1mA Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance B5817W B5818W B5819W V(BR) IR VF CD 20 30 40 VR=20V VR=30V VR=40V B5817W B5818W B5819W B5817W IF=1A IF=3A 0.45 0.75 B5818W IF=1A IF=3A 0.55 0.875 B5819W IF=1A IF=3A 0.6 0.9 VR=4V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com V 2 1 120 mA V pF B5817W-B5819W www.slkormicro.com 3