BSS138

BSS138 N-Channel Enhancement-Mode MOS FETs MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 50 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 220 mA Drain Current (pulsed) IDRM 880 mA THERMAL CHARACTERISTICS Symbol Characteristic Total Device Dissipation TA=25℃ Derate above25℃ Unit 225 mW 1.8 mW/℃ 350 ℃/W PD Thermal Resistance Junction to Ambient RΘJA Junction and Storage Temperature TJ,Tstg www.slkormicro.com Max 1 150℃,-55to+150℃ BSS138 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (ID =250uA,VGS=0V) BVDSS 50 — — V Gate Threshold Voltage (ID =1mA,VGS= VDS) VGS(th) 0.8 — 1.6 V Diode Forward Voltage Drop (ISD=220mA,VGS=0V) VSD — — 1.4 V Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) (VGS=0V, VDS=0.6BVDSS) IDSS — — 0.5 100 uA nA Gate Body Leakage (VGS=+20V, VDS=0V) IGSS — — +100 nA RDS(ON) — — 3.5 6 Ω CISS — — 50 pF COSS — — 25 pF Turn-ON Time (VDS=30V, ID=200mA, RGEN=25Ω) t(on) — — 20 ns Turn-OFF Time (VDS=30V, ID=200mA, RGEN=25Ω) t(off) — — 20 ns Static Drain-Source On-State Resistance (ID=220mA,VGS=10V) (ID=220mA,VGS=4.5V) Input Capacitance (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance (VGS =0V, VDS=25V,f=1MHz) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width