BC856-BC858
TRANSISTOR PNP
SOT-23
FEATURES
y
Ideally suited for automatic insertion
y
For Switching and AF Amplifier Applications
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
Collector-Base Voltage
VCBO
BC856
-80
BC857
-50
BC858
-30
BC856
-65
BC857
-45
BC858
-30
V
Collector-Emitter Voltage
VCEO
VEBO
IC
V
Emitter-Base Voltage
Collector Current –Continuous
-0.1
PC
Collector Power Dissipation
200
RΘJA
Thermal Resistance From Junction To Ambient
A
625
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~+150
℃
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1
BC856-BC858
ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
T est conditions
BC856
BC857
IC= -10μA, IE=0
IC= -10mA, IB=0
-45
V
-30
Emitter-base breakdown voltage
VEBO
BC856
IE= -1μA, IC=0
V
-5
VCB= -70 V , IE=0
BC857
ICBO
BC858
VCB= -45 V , IE=0
-0.1
μA
-0.1
μA
VCB= -25 V , IE=0
Emitter cut-off current
DC current gain
V
-50
-65
VCEO
BC858
Collector cut-off current
Unit
-30
BC856
BC857
Max
-80
VCBO
BC858
Collector-emitter breakdown voltage
Min
IEBO
VEB= -5 V , IC=0
BC856A, 857A,858A
BC856B, 857B,858B
hFE
VCE= -5V,IC= -2mA
BC857C,BC858C
125
250
220
475
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
fT
Collector capacitance
Cob
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2
VCE= -5 V, IC= -10mA
f=100MHz
VCB=-10V, f=1MHz
100
MHz
4.5
pF
BC856-BC858
Static Characteristic
-8
COMMON
EMITTER
Ta=25℃
IC
-24uA
DC CURRENT GAIN
-21uA
-18uA
-4
-15uA
-12uA
-9uA
-2
—— IC
Ta=100℃
-27uA
-6
hFE
(mA)
-30uA
COLLECTOR CURRENT
hFE
1000
Ta=25℃
100
-6uA
COMMON EMITTER
VCE= -5V
IB=-3uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1
——
VCE
10
-0.1
-8
-1
(V)
-10
COLLECTOR CURRENT
IC
VBEsat
——
-2
IC
-100
(mA)
IC
-1
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=25℃
-0.1
Ta=100℃
Ta=25℃
Ta=100℃
ȕ=20
ȕ=20
-0.01
-0.1
-1
-10
COLLECTOR CURRENT
IC
-100
(mA)
-10
COLLECTOR CURRENT
—— VBE
fT
IC
-100
(mA)
IC
——
(MHz)
Ta=100℃
TRANSITION FREQUENCY
fT
-10
Ta=25℃
-1
COMMON EMITTER
VCE=-5V
-0.1
-0.0
-1
500
(mA)
IC
COLLECTOR CURRENT
IC
-0.1
-0.1
-100
-0.3
-0.6
-0.9
100
COMMON EMITTER
VCE=-5V
Ta=25℃
10
-0.1
-1.2
-1
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib
-10
COLLECTOR CURRENT
—— VCB/ VEB
PC
250
30
——
IC
-100
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
10
C
(pF)
Ta=25 ℃
Cib
CAPACITANCE
Cob
1
-0.1
-1
REVERSE VOLTAGE
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-10
VR
200
150
100
50
0
-20
0
(V)
25
50
75
AMBIENT TEMPERATURE
3
100
Ta
125
(℃ )
150
BC856-BC858
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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4
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
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