BAV70

BAV70 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter 2 Marking Code: A4 SOT-23 Plastic Package Symbol Value Unit Maximum Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Forward Current IO 200 mA Maximum Peak Forward Current IFM 300 mA IFSM 1 2 A Power Dissipation Pd 350 mW Junction Temperature Tj 150 O Tstg - 55 to + 150 O Non-Repetitive Peak Forward Surge Current at t = 1 s at t = 1 µs Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF - 715 855 1 1.25 mV mV V V Reverse Current at VR = 20 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR - 25 2.5 30 50 nA µA µA µA V(BR)R 75 - V Total Capacitance at VR = 0 , f = 1 MHz CT - 2 pF Reverse Recovery Time at IF = IR = 10 mA to Irr = 1 mA, RL = 50 Ω trr - 4 ns Reverse Breakdown Voltage at IR = 100 µA www.slkormicro.com 1 BAV70 www.slkormicro.com 2