2N7002

2N7002 N-Channel Power MOSFET D General Features ● VDS = 60V,ID =0.115A G RDS(ON) < 7.5 Ω@ VGS=5V ● High power and current handing capability ● Lead free product is acquired S ● Surface mount package Schematic diagram Application ● Battery protection ● Load switch ● Power management SOT-23 top view ■MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 60 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 115 mA Drain Current (pulsed) IDRM 800 mA ■THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Symbol Max Unit PD 225 mW 1.8 mW/℃ 417 ℃/W Derate above25℃ Thermal Resistance Junction to Ambient RΘJA Junction and Storage Temperature TJ,Tstg www.slkormicro.com 1 150℃,-55to+150℃ 2N7002 ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ) Characteristic Drain-Source Breakdown Voltage (ID =250uA,VGS=0V) Gate Threshold Voltage (ID =250uA,VGS= VDS) Drain-Source On Voltage (ID=50mA,VGS=5V) (ID =500mA,VGS=10V) Diode Forward Voltage Drop (ISD=200mA,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) (VGS=0V, VDS=0.8BVDSS, TA=125℃) Gate Body Leakage (VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance (ID=50mA,VGS=5V) (ID=500mA,VGS=10V) Input Capacitance (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS=25V,f=1MHz) Turn-ON Time (VDS=30V, ID=200mA, RGEN=25Ω) Turn-OFF Time (VDS=30V, ID=200mA, RGEN=25Ω) Reverse Recovery Time (ISD=800mA, VGS=0V) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width